Diodes Incorporated DXTP5840CFDB-7

Overview

DXTP5840CFDB from Diodes Incorporated is a 40V PNP low-saturation transistor in U-DFN2020-3 package, designed for high-current switching with V_CE(sat) as low as –10 mV at –0.1A/–10mA drive, h_FE ≥250 at –10mA, and rated for –4.8A continuous collector current. It serves as a compact, thermally efficient power switch in space-constrained DC-DC converters and motor control circuits.

For engineers reviewing the DXTP5840CFDB datasheet, DXTP5840CFDB pinout, DXTP5840CFDB application, or DXTP5840CFDB equivalent, key selection criteria include its low-profile 0.6mm height, JEDEC-qualified reliability, –40V V_CEO rating, and verified performance under pulsed and DC conditions per DS39773 Rev. 3-2.

Technical Context

This PNP bipolar junction transistor operates with emitter-grounded configuration and supports high-current gain retention up to –3A (h_FE ≥150), enabling stable switching in charging circuits where base drive efficiency and thermal management are critical. Its U-DFN2020-3 (Type B) package features an exposed collector pad for enhanced thermal dissipation.

The device meets JEDEC reliability standards with ESD HBM rating of 4,000V and MM rating of 400V, and exhibits low V_CE(sat) across wide current range (–0.1A to –4A), supporting high-efficiency operation in automotive-adjacent industrial power stages without requiring external heatsinking on minimal copper area.

Key Specifications

Pinout & Package

U-DFN2020-3 (Type B) is a 3-terminal, bottom-exposed collector package with 0.6 mm nominal height, NiPdAu-plated terminals, and UL 94V-0 molding compound. The exposed collector pad improves thermal resistance and must be soldered to a dedicated copper pour for rated power handling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-saturation transistor applications.

Compared with DXTN5840CFDB and DMT3005LFG-7, DXTP5840CFDB delivers superior voltage margin (–40V), lowest conduction loss (–37 mV @ –1A), and highest continuous current (–4.8A), making it optimal for demanding 24–36V power switching where thermal density and transient robustness are critical.

Availability

DXTP5840CFDB is available at Aetrix Electronics and suitable for DC-DC converters, charging circuits, and motor control applications requiring stable component supply, JEDEC-qualified reliability, and consistent U-DFN2020-3 packaging across production batches.

Supply support for DXTP5840CFDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.

This device belongs to Diodes' Power Transistor product line, engineered specifically for high-efficiency, space-constrained power switching in industrial, computing, and automotive-adjacent applications where low saturation voltage and thermal reliability are essential.

FAQ

What is the maximum allowable PCB copper area for optimal thermal performance of DXTP5840CFDB?

The datasheet specifies two thermal test conditions: 5mm × 5mm 2oz copper yields R_θJA = 180°C/W, while 25mm × 25mm 1oz copper improves it to 100°C/W. For production designs targeting ≤1W dissipation, a minimum 5mm × 5mm thermal pad connected to internal ground plane is required; larger copper areas further reduce junction temperature but offer diminishing returns beyond 10mm × 10mm.

Can DXTP5840CFDB be used in AEC-Q101 qualified automotive applications?

No - DXTP5840CFDB is not AEC-Q101 qualified. Diodes offers automotive-grade equivalents with Q-suffix (e.g., DXTP5840CFDBQ-7), which undergo PPAP, additional stress testing, and are manufactured in IATF 16949-certified facilities. Standard DXTP5840CFDB is intended for industrial and commercial use only.

What is the recommended solder reflow profile for U-DFN2020-3 package?

Per Diodes' packaging guidelines, the U-DFN2020-3 package requires a lead-free reflow profile with peak temperature of 260°C (±5°C), time above liquidus (TAL) of 60–90 seconds, and ramp-up rate ≤3°C/s. The moisture sensitivity level is J-STD-020 Level 1, so baking is not required unless exposed to ambient >60% RH for >168 hours.

How does V_CE(sat) vary with temperature and current in practical operation?

V_CE(sat) increases with junction temperature and collector current: at –2A/–20mA drive, it rises from –190 mV at 25°C to –230 mV at 100°C; at –4A/–400mA, it reaches –260 mV at 25°C. Designers must use the derated curves in DS39773 Figure 5 to ensure saturation is maintained across the full operating temperature range.