Diodes Incorporated DXTP5860CFDB-7

Overview

DXTP5860CFDB-7 from Diodes Incorporated is a 60V PNP low-saturation transistor in U-DFN2020-3 (Type B) package, designed for high-current switching in power conversion stages. It delivers V_CEO = −60 V, h_FE = 170–220 at −500 mA, V_CE(sat) = −40 mV (typ.) at −0.5 A/−50 mA, and supports continuous I_C = −4 A. It is used in DC-DC converters where compact size and low conduction loss are critical.

For engineers reviewing the DXTP5860CFDB-7 datasheet, DXTP5860CFDB-7 pinout, DXTP5860CFDB-7 application, or DXTP5860CFDB-7 equivalent, key selection criteria include verified PNP saturation voltage at ≥1 A drive, JEDEC-qualified reliability for industrial ambient operation up to +125°C, thermal resistance R_θJA = 180°C/W on 5 mm × 5 mm 2 oz copper, and automotive-grade traceability via Q-suffix variants.

Technical Context

This PNP bipolar junction transistor operates with emitter-grounded configuration and is optimized for saturated-switching mode in medium-power applications. Its design emphasizes low V_CE(sat) across I_C = −0.5 A to −5 A and stable h_FE down to −5 A, enabled by advanced epitaxial base doping and emitter geometry.

The U-DFN2020-3 (Type B) package features an exposed collector pad for thermal enhancement and NiPdAu-plated terminals compatible with lead-free reflow. It meets J-STD-020 moisture sensitivity Level 1 and achieves 4 kV HBM ESD robustness per JEDEC JESD22-A114.

Key Specifications

Pinout & Package

U-DFN2020-3 (Type B) is a 3-terminal, bottom-exposed collector, lead-free surface-mount package measuring 2.0 mm × 2.0 mm × 0.6 mm nominal height. The exposed collector pad improves thermal performance and must be soldered to a dedicated PCB copper area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-saturation transistor applications.

Compared with DMT6009LPS-13 and DXTP5820CFDB-7, DXTP5860CFDB-7 uniquely balances 60 V blocking, −4 A continuous rating, and proven bipolar drive simplicity-making it optimal for cost-sensitive, thermally constrained 24–48 V industrial switching where MOSFET gate drive overhead is undesirable.

Availability

DXTP5860CFDB-7 is available at Aetrix Electronics and suitable for DC-DC converters, charging circuits, and motor control applications requiring stable component supply, JEDEC-qualified reliability, and RoHS-compliant packaging.

Supply support for DXTP5860CFDB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' high-reliability PNP transistor product line, engineered specifically for industrial and automotive power switching applications demanding low saturation voltage, stable gain at high current, and robust thermal performance in ultra-thin packages.

FAQ

What is the maximum continuous collector current for DXTP5860CFDB-7?

The maximum continuous collector current is −4 A at T_A = +25°C with the exposed collector pad soldered to a 5 mm × 5 mm 2 oz copper area on FR4. Derating applies above +25°C ambient; at +85°C, max I_C drops to approximately −2.5 A based on the 180°C/W R_θJA and 150°C max junction temperature.

Is DXTP5860CFDB-7 qualified for automotive use?

DXTP5860CFDB-7 is not AEC-Q101 qualified. However, Diodes offers automotive-grade equivalents with Q-suffix (e.g., DXTP5860CFDBQ-7), which undergo full AEC-Q101 stress testing, PPAP documentation, and are manufactured in IATF 16949-certified facilities. These variants share identical electrical specs and package but add automotive change control and traceability.

How should the exposed collector pad be handled during PCB layout?

The exposed collector pad (Pin 3) must be connected to a dedicated thermal copper pour on the PCB, sized per Diodes' recommended pad layout (D2 = 1.32 mm, E2 = 0.89 mm). A minimum of 5 mm × 5 mm 2 oz copper is required for rated 0.69 W dissipation. Thermal vias to inner layers are recommended for enhanced heat spreading in high-power operation.

What is the typical V_CE(sat) at I_C = −5 A and I_B = −250 mA?

The typical V_CE(sat) is −355 mV at I_C = −5 A and I_B = −250 mA, with a maximum of −450 mV under those conditions. This value is measured under pulsed conditions (≤300 µs pulse width, ≤2% duty cycle) per Note 8 in the datasheet, and reflects the device's capability to sustain high-current saturation with controlled thermal rise.