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Diodes Incorporated DZT5551-13

Part No.:
DZT5551-13
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixDZT5551-13.pdf
Description:
TRANS NPN 160V 0.6A SOT-223-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:48,879

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Product details

Overview

DZT5551-13 from Diodes Incorporated is a 160V NPN high-voltage transistor in SOT223 package, designed for high-voltage amplification and switching. It delivers 600mA continuous collector current, supports VCEO ≥ 160V and VCBO ≥ 180V, and achieves VCE(sat) ≤ 150mV at IC = 10mA/IB = 1mA - enabling efficient operation in flyback snubbers and HV DC-DC bias rails.

For engineers reviewing the DZT5551-13 datasheet, DZT5551-13 pinout, DZT5551-13 application, or DZT5551-13 equivalent, key selection criteria include verified high-voltage blocking (160V VCEO), low saturation voltage under defined drive conditions, thermal resistance (RθJA = 62.5°C/W on 50mm × 50mm PCB), and complementary pairing with DZT5401 for push-pull topologies.

Technical Context

This NPN bipolar junction transistor operates with a minimum hFE of 80 at IC = 1mA and maintains usable gain up to 50mA, supporting stable current amplification across wide temperature range (–55°C to +150°C). Its fT ≥ 100MHz enables use in medium-frequency switching applications such as auxiliary power supply control.

The device exhibits low VBE(sat) (≤ 1000mV at IC = 50mA/IB = 5mA) and tight Cobo (≤ 6pF), reducing base drive loss and minimizing Miller effect in high-dV/dt environments like SMPS primary-side switching.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 160 V - Ensures safe operation in circuits with up to 160V collector-emitter potential, e.g., offline flyback clamp nodes.
IC (cont.) 600 mA - Supports sustained current handling in bias supplies and gate drivers without derating below 100°C ambient.
VCE(sat) 150 mV max @ 10mA/1mA - Minimizes conduction loss in low-power switching stages, improving efficiency in <1W auxiliary rails.
hFE 80–250 - Provides predictable DC current gain across 1–50mA, enabling stable base-resistor biasing in discrete control loops.
fT 100 MHz min - Allows reliable operation in switching frequencies up to ~10MHz with adequate gain margin.
RθJA 62.5 °C/W - Requires ≥50mm × 50mm copper area for full 2W power dissipation at +25°C ambient per datasheet test condition.

Pinout & Package

Package: SOT223 - Surface-mount plastic package with exposed thermal pad (collector-connected), rated for 2W dissipation on standard FR-4 PCBs with 1oz copper.

Pin/Terminal Circuit Role Design Meaning
1 (Emitter) Emitter terminal Reference node for base drive; connects to ground or low-side return path in common-emitter configurations.
2 (Base) Control input Receives current-limited drive signal; requires external resistor to limit IB per hFE target and VBE(sat) spec.
3 (Collector) High-voltage output Carries switched load current; electrically tied to thermal pad for enhanced heat transfer in PCB layout.
4 (Collector / Tab) Thermal & electrical connection Exposed metal tab is internally connected to collector; must be soldered to large copper pour for thermal management.

Key Features

Feature Design Value
High VCEO rating 160V minimum - Enables direct replacement of legacy 120V transistors in upgraded HV designs without topology change.
Low VCE(sat) ≤150mV @ IC/IB = 10/1 - Reduces power loss in linear-regulator pass elements and improves efficiency in low-duty-cycle switches.
Stable hFE up to 50mA Specified hFE ≥ 30 at IC = 50mA - Guarantees sufficient gain for base-driven switching in constant-current LED drivers.
Green, RoHS-compliant construction Halogen- and antimony-free molding compound (<900ppm Br+Cl, <1000ppm Sb) - Meets automotive and industrial environmental compliance requirements.

Applications

Switch-Mode Power Supply Auxiliary Bias Flyback Converter Snubber Circuit

Use Scenario: Providing isolated 12V/5V bias to PWM controller ICs in offline AC-DC converters.

IC Role / Device Role: NPN switch controlling energy transfer into auxiliary winding; operates in saturated switching mode.

Use Value: Low VCE(sat) minimizes conduction loss during on-time; 160V VCEO withstands reflected flyback spikes up to 135V.

Use Scenario: Clamping voltage overshoot across main MOSFET drain during turn-off in discontinuous conduction mode.

IC Role / Device Role: Active clamp transistor absorbing leakage inductance energy via RCD network.

Use Value: High VCBO (180V) prevents breakdown during transient spikes; fast storage time (1256ns) limits clamping delay.

Industrial Relay Driver High-Voltage Linear Regulator Pass Element

Use Scenario: Driving 24V/48V industrial relay coils requiring >500mA peak current and isolation from logic-level MCU outputs.

IC Role / Device Role: Medium-power NPN switch interfacing microcontroller GPIO to inductive load.

Use Value: 600mA IC rating handles relay inrush; BVEBO > 6V tolerates back-EMF from coil flyback diode recovery.

Use Scenario: Acting as series pass element in 100V-input, 15V-output linear regulator for analog sensor front-ends.

IC Role / Device Role: Voltage-controlled current source regulating output by dissipating excess input-output differential.

Use Value: 2W power rating supports 150mA load at 100V–15V drop; RθJC = 27°C/W enables heatsinkless operation with board copper.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MJD5551G VCEO = 160V same; hFE min = 80 at IC = 10mA (vs. DZT5551's 80 at 1mA); RθJA = 70°C/W (higher thermal resistance) Lower gain at light loads reduces base drive margin in low-IC bias circuits; less suitable for <5mA operating points Select when footprint compatibility with TO-252 is required and thermal budget allows higher junction rise.
ZTX550 VCEO = 150V (10V lower); VCE(sat) = 250mV @ 10mA/1mA (67% higher); SOT89 package (smaller thermal pad) Not recommended for 160V systems due to 10V headroom reduction; higher saturation loss increases self-heating in continuous duty Acceptable only in derated 140V applications where space constraints prohibit SOT223 mounting area.

Compared with MJD5551G and ZTX550, DZT5551-13 offers superior low-current gain stability, lower saturation voltage, and better thermal performance in SOT223 - making it preferred for precision bias generation and thermally constrained HV switching.

Availability

DZT5551-13 is available at Aetrix Electronics and suitable for high-voltage switching, industrial relay driving, and SMPS auxiliary bias applications requiring stable component supply and long-term manufacturing continuity.

Supply support for DZT5551-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for industrial, computing, and consumer markets.

The DZT5551 belongs to Diodes' high-voltage bipolar transistor product line, engineered for robustness in off-line power conversion, motor control interfaces, and industrial signal conditioning where voltage endurance and thermal stability are critical.

FAQ

Is DZT5551-13 pin-compatible with standard SOT223 NPN transistors?

Yes - DZT5551-13 uses the industry-standard SOT223 pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector, Pin 4 = Collector (tab). This matches JEDEC MO-178AB and is mechanically and electrically compatible with other SOT223-packaged NPN transistors such as MMBT5551 and PN2222A variants, provided voltage and current ratings are verified.

What is the maximum allowable continuous power dissipation for DZT5551-13?

The absolute maximum continuous power dissipation is 2W when mounted on a 50mm × 50mm × 1.6mm FR-4 PCB with 1oz copper on one side, measured in still air at +25°C ambient. Derating begins at +25°C at 16mW/°C (per RθJA = 62.5°C/W), reaching zero dissipation at +150°C case temperature.

Does DZT5551-13 meet AEC-Q101 qualification for automotive use?

No - DZT5551-13 is not AEC-Q101 qualified. The datasheet explicitly states that automotive-grade versions require separate qualification (AEC-Q100/101/104/200), PPAP capability, and IATF 16949 manufacturing - none of which apply to the standard DZT5551-13. For automotive applications, contact Diodes Incorporated for qualified alternatives like DXT5551Q.

Can DZT5551-13 replace PN2222A in high-voltage circuits?

No - PN2222A has VCEO = 40V and IC = 800mA but cannot withstand 160V collector-emitter stress. Substituting DZT5551-13 for PN2222A is only valid if the circuit operates below 40V and thermal design accommodates SOT223's larger footprint and different RθJA. In 160V applications, PN2222A would fail catastrophically.

DZT5551-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
600 mA
Voltage - Collector Emitter Breakdown (Max):
160 V
Vce Saturation (Max) @ Ib, Ic:
200mV @ 5mA, 50mA
Current - Collector Cutoff (Max):
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Power - Max:
1 W
Frequency - Transition:
300MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223-3

DZT5551-13 FAQ

1.How can I place an order for DZT5551-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DZT5551-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DZT5551-13 reliable?

The price and inventory of DZT5551-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DZT5551-13 is usually 5 days.

3.What payment methods are accepted for DZT5551-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DZT5551-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DZT5551-13?

DZT5551-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DZT5551-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DZT5551-13?

For technical support, including DZT5551-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DZT5551-13 requirements.

6.How does Aetrix verify that DZT5551-13 is sourced from the original manufacturer or authorized distributors?

All DZT5551-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DZT5551-13 meets industry standards.

7.What is the process for return or replacement of DZT5551-13?

All DZT5551-13 units undergo pre-shipment inspection (PSI). If there is an issue with DZT5551-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DZT5551-13 part is unused and in its original packaging.

Return procedure for DZT5551-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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