Diodes Incorporated DZT851-13

Overview

DZT851-13 from Diodes Incorporated is an NPN epitaxial planar bipolar junction transistor in SOT-223 package, rated for 60 V V_CEO, 6 A continuous collector current, and 3 W power dissipation on a 4-inch² PCB copper area. It delivers h_FE = 100–300 (at I_C = 10 mA to 10 A), V_CE(SAT) = 170 mV (I_C = 2 A, I_B = 50 mA), and f_T = 130 MHz, targeting medium-power switching in DC-DC converters and motor drivers.

For engineers reviewing the DZT851-13 datasheet, DZT851-13 pinout, DZT851-13 application, or DZT851-13 equivalent, key selection criteria include verified V_CEO/I_C derating curves, SOT-223 thermal pad layout compliance, saturation voltage under pulsed 6 A load, and RoHS-compliant matte tin plating compatibility with lead-free reflow profiles.

Technical Context

The DZT851-13 operates as a medium-power NPN switch with complementary PNP pairing (DZT951). Its epitaxial planar die construction ensures stable h_FE across I_C = 10 mA–10 A and supports fast switching (t_on = 45 ns, t_off = 1100 ns) at V_CC = 10 V with I_B1/I_B2 = 100 mA.

Thermal performance is defined by J-STD-020C Level 1 moisture sensitivity and FR-4 PCB mounting per IPC-SM-782 pad layout. The device's 150 °C maximum junction temperature and -55 °C minimum storage temperature enable operation in industrial ambient environments up to +100 °C with validated I_CBO ≤ 50 nA at V_CB = 120 V.

Key Specifications

Pinout & Package

SOT-223 package with exposed thermal pad (pin 4), molded green compound (UL 94V-0), and matte tin-plated copper leadframe. Dimensions: 6.50 × 3.50 × 1.60 mm (L × E × A), weight ≈ 0.115 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power switching applications.

Compared with ZXTN2010FHTA and MJD122G, the DZT851-13 uniquely balances 6 A SMT-compatible current handling, 3 W PCB-mountable power dissipation, and 170 mV saturation-enabling compact, lead-free, high-efficiency switching without heatsinks or manual assembly.

Availability

DZT851-13 is available at Aetrix Electronics and suitable for DC-DC converters, brushed DC motor drivers, LED constant-current regulators, and industrial PLC output stages requiring stable component supply with full RoHS and J-STD-020C compliance.

Supply support for DZT851-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, industry-qualified components for automotive, industrial, and consumer markets.

The DZT851-13 belongs to Diodes' medium-power bipolar transistor product line, engineered for surface-mount switching and amplification in cost-sensitive, thermally constrained applications where SOT-223 footprint and RoHS compliance are mandatory.

FAQ

What is the maximum allowable PCB copper area for the DZT851-13 to achieve its 3 W power rating?

The 3 W rating assumes mounting on an FR-4 PCB with ≥4 square inches of copper area, per the pad layout shown in Diodes' DS30738 datasheet page 4. Reducing copper area lowers thermal resistance and requires derating per Figure 1 (Power Dissipation vs. Ambient Temperature). No heatsink is required at this condition.

Is the DZT851-13 pin-compatible with the DZT951 PNP transistor?

No - DZT851-13 (NPN) and DZT951 (PNP) share identical SOT-223 mechanical dimensions and pinout order (Emitter-Base-Collector-Tab), but polarity reversal means circuit-level substitution requires schematic inversion (e.g., high-side vs. low-side placement). They are complementary, not drop-in replacements.

Does the DZT851-13 require a base resistor for safe operation in switching mode?

Yes - base current must be limited to prevent damage. For 6 A collector current, h_FE min = 25 at I_C = 10 A implies ≥300 mA base drive. With 3.3 V or 5 V logic drive, a series resistor (e.g., 10 Ω for 5 V) ensures safe I_B while accounting for V_BE(SAT) ≈ 1.2 V. Undriven base risks latch-up or thermal runaway.

Can the DZT851-13 be used in linear amplifier configurations?

Yes - its h_FE = 100–300 and f_T = 130 MHz support Class-A/B audio and signal amplification up to ~10 MHz. However, linear operation demands strict thermal management: at 1 W dissipation, junction temperature rise exceeds 100 °C without copper pour, limiting practical use to low-duty-cycle or low-power gain stages.