Diodes Incorporated DZT853-13

Overview

DZT853-13 from Diodes Incorporated is an NPN epitaxial planar bipolar junction transistor in SOT-223 package, rated for 100 V V_CEO, 6 A I_C, and 3 W P_tot (on 4-in² PCB), designed for medium-power switching and linear amplification in industrial power supplies and motor drivers.

For engineers reviewing the DZT853-13 datasheet, DZT853-13 pinout, DZT853-13 application, or DZT853-13 equivalent, key selection criteria include V_CEO derating at elevated T_A, V_CE(SAT) at I_C = 5 A, h_FE stability across 10 mA–4 A, and thermal performance on FR-4 with specified pad layout.

Technical Context

This NPN BJT operates in active or saturation mode with DC current gain h_FE ranging from 50 (at I_C = 4 A) to 300 (at I_C = 10 mA), supporting both switching and analog amplification functions. Its f_T of 130 MHz enables use in high-speed switching up to ~100 kHz with controlled turn-on/turn-off times (t_on = 50 ns, t_off = 1650 ns).

Thermal design relies on the SOT-223 package's exposed collector tab for PCB heat spreading; power dissipation drops linearly above 25°C ambient, reaching ~1.5 W at 100°C with the 4-in² copper area. V_BE(ON) is 1.1 V and V_BE(SAT) is 1.25 V at I_C = 5 A / I_B = 500 mA, defining base drive requirements for low-loss saturation.

Key Specifications

Pinout & Package

Package: SOT-223, surface-mount, thermally enhanced with exposed collector tab. Molded plastic case meets UL 94V-0; matte tin-plated copper leadframe ensures RoHS-compliant solderability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN medium-power switching applications.

Compared with MJD127-1 and ZTX851, DZT853-13 delivers optimal balance of 100 V blocking, 6 A current, and thermal robustness in SOT-223-making it preferred for industrial 48 V switching where reliability under sustained load matters more than ultra-high f_T or raw current headroom.

Availability

DZT853-13 is available at Aetrix Electronics and suitable for industrial DC-DC converters, brushed DC motor drivers, and linear regulator pass elements requiring stable component supply with RoHS compliance and SMT manufacturability.

Supply support for DZT853-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The DZT series targets medium-power bipolar switching and amplification, emphasizing ruggedness, thermal performance, and compatibility with high-volume automated assembly for industrial and automotive-qualified applications.

FAQ

What is the maximum allowable junction temperature for DZT853-13?

The absolute maximum junction temperature is +150°C, as specified in the "Operating and Storage Temperature Range" section. Derating begins at +25°C ambient, and sustained operation above +125°C requires verification of thermal resistance (R_θJA) using the exact PCB layout shown in Figure 1 of DS30737 Rev. 3-2.

Can DZT853-13 be used in parallel configurations?

Parallel operation is not recommended without external emitter resistors, as h_FE variation and thermal coupling may cause current imbalance. The datasheet does not specify matching tolerance or parallel derating curves; for >6 A total current, use a single higher-rated device or a MOSFET alternative.

Is the SOT-223 footprint compatible with standard IPC-7351 guidelines?

Yes-the suggested pad layout on page 4 of DS30737 Rev. 3-2 conforms to IPC-SM-782 (predecessor to IPC-7351). Pad dimensions match IPC-7351A "SOT223" generic land pattern, with 7.0 mm E1 width and 4.6 mm e pitch ensuring mechanical stability and thermal relief.

Does DZT853-13 have avalanche rating or ruggedness data?

No avalanche energy (E_AS) or second breakdown data is provided in the datasheet. It is rated for repetitive switching only under clamped inductive load conditions with V_CE ≤ V_CEO; unclamped inductive switching requires external snubbers or voltage clamping to avoid destructive failure.