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onsemi ECH8102-TL-H
- Part No.:
- ECH8102-TL-H
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- 8-SMD, Flat Leads
- Datasheet:
-
ECH8102-TL-H.pdf
- Description:
- TRANS PNP 30V 12A 8-ECH
- Quantity:
- Payment:
- Shipping:
Inventory:2,658
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Product details
Overview
ECH8102-TL-H from onsemi is a PNP bipolar junction transistor (BJT) optimized for high-current switching in power control circuits, featuring –30 V VCEO, –12 A IC, –135 mV VCE(sat) at –6 A/–300 mA, 140 MHz fT, and ECH8 surface-mount package. It is used in IGBT/MOSFET gate drivers and motor drivers requiring low saturation loss and fast turn-off.
For engineers reviewing the ECH8102-TL-H datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCE(sat) performance at high IC, guaranteed IECO reverse-flow blocking, thermal dissipation on ceramic substrate, and ECH8 footprint compatibility with high-power DC/DC converter layouts.
Technical Context
The ECH8102-TL-H employs FBET and MBIT process technology to achieve low VCE(sat) and high-speed switching with 91 ns turn-on and 17 ns fall time. Its IECO parameter ensures intrinsic emitter-collector reverse current blocking without external diodes.
Designed for operation up to 150 °C junction temperature, it delivers 1.6 W power dissipation when mounted on a 900 mm² × 0.8 mm ceramic substrate and maintains hFE ≥100 at –10 A collector current under VCE = –2 V bias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | –30 V - Maximum allowable collector-emitter voltage before breakdown; defines safe operating range in high-side switch configurations |
| IC | –12 A - Continuous collector current rating; supports sustained load switching in motor and lamp driver stages |
| VCE(sat) | –135 mV @ –6 A/–300 mA - Low conduction loss enables >95% efficiency in high-current linear or saturated switching modes |
| fT | 140 MHz - Gain-bandwidth product enabling stable operation in gate drive amplifiers up to ~20 MHz switching frequencies |
| hFE | 100 @ –10 A - Sustained DC current gain at full rated current ensures reliable base drive sizing without overdesign |
| tf | 17 ns - Fast fall time minimizes switching transition losses in PWM-controlled power stages |
| IECO | –1 μA @ VEC = –4.5 V - Confirmed reverse emitter-collector leakage suppression eliminates need for external blocking diode |
Pinout & Package
Package: ECH8 - 8-pin, dual-emitter, quad-collector surface-mount plastic package with exposed thermal pad; dimensions 2.9 mm × 2.8 mm × 0.8 mm (typ), compatible with reflow soldering per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Emitter | Three parallel emitter terminals reduce bond wire inductance and improve current sharing in high-di/dt applications |
| 4 | Base | Single base connection optimized for low-impedance drive; requires ≤–1.2 A peak base current for full saturation |
| 5, 6, 7, 8 | Collector | Four parallel collector terminals enhance thermal spreading and reduce package inductance for fast switching stability |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | –135 mV at –6 A enables <0.8 W conduction loss, reducing heatsink requirements in compact motor drivers |
| IECO reverse blocking | Guaranteed –1 μA leakage at –4.5 V prevents unintended reverse conduction in bidirectional clamp or flyback topologies |
| High-speed switching | 91 ns ton/17 ns tf supports >500 kHz PWM operation with minimal overlap loss in half-bridge gate drivers |
| Thermal capability | 1.6 W PC on ceramic substrate allows direct mounting to metal-core PCBs without auxiliary heatsinking in 12 V systems |
| Halogen-free & Pb-free | Meets IEC 61249-2-21 and RoHS Directive 2011/65/EU; suitable for automotive and industrial end-equipment compliance |
Applications
| IGBT Gate Driver Stage | DC/DC Converter Synchronous Rectifier |
|---|---|
Use Scenario: Driving the gate of a 600 V IGBT in a 5 kW solar inverter half-bridge leg with 20 kHz PWM. IC Role / Device Role / Timing Role: High-current PNP switch providing active pull-down during IGBT turn-off to minimize tail current and switching loss. Use Value: –135 mV VCE(sat) and 17 ns tf reduce gate discharge energy by 35% vs. standard BJT alternatives, improving inverter efficiency. | Use Scenario: Replacing Schottky diodes in a 48 V → 12 V isolated forward converter secondary-side rectification stage. IC Role / Device Role / Timing Role: Synchronously controlled PNP switch replacing passive rectifier, timed to conduct only during transformer reset phase. Use Value: IECO blocking eliminates reverse recovery charge, enabling zero-voltage switching and reducing secondary-side EMI by 12 dB. |
| Lamp Ballast Control | Brushed DC Motor H-Bridge Low-Side Switch |
Use Scenario: Controlling cold-cathode fluorescent lamp (CCFL) current in an LCD backlight inverter with 60 kHz resonant frequency. IC Role / Device Role / Timing Role: High-speed PNP switch modulating lamp current via pulse-width control in series-resonant topology. Use Value: 140 MHz fT ensures faithful amplification of 60 kHz square wave with <2° phase lag, maintaining lamp brightness stability. | Use Scenario: Low-side switching element in a 24 V, 8 A brushed DC motor driver for industrial actuator positioning. IC Role / Device Role / Timing Role: Saturated PNP switch sinking motor current during PWM on-time; leverages dual-emitter pins for current sharing. Use Value: Parallel emitter terminals (pins 1–3) reduce effective emitter resistance by 40%, lowering thermal stress during 100% duty-cycle stall conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP high-current switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MBT3906DW1T1G | SO-8 package, –100 mA IC, –40 V VCEO, no IECO guarantee | Signal-level logic inversion only; unsuitable for >1 A loads or motor drive | Select only for low-power bias networks where ECH8102-TL-H's current capacity is excessive |
| SSM2212RZ-REEL | SOIC-8, matched PNP pair, –15 mA IC, no VCE(sat) < –100 mV spec | Current mirror and precision analog use; lacks pulse current rating and thermal robustness | Choose only for differential amplifier biasing-not for power switching |
Compared with MBT3906DW1T1G and SSM2212RZ-REEL, the ECH8102-TL-H uniquely combines –12 A current handling, –135 mV saturation voltage, and IECO reverse blocking in a thermally enhanced ECH8 package-making it irreplaceable in high-power gate driving and motor control where both current density and reverse integrity are critical.
Availability
ECH8102-TL-H is available at Aetrix Electronics and suitable for high-power IGBT gate drivers, DC/DC converter synchronous rectifiers, and brushed DC motor drivers requiring stable component supply across automotive, industrial automation, and renewable energy programs.
Supply support for ECH8102-TL-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The ECH8102-TL-H belongs to onsemi's high-current bipolar transistor family engineered specifically for demanding power switching roles-including gate driving, lamp ballasting, and motor control-where low VCE(sat), fast switching, and thermal resilience are non-negotiable.
FAQ
What is the maximum continuous collector current rating for the ECH8102-TL-H?
The ECH8102-TL-H has a maximum continuous collector current (IC) rating of –12 A at Ta = 25 °C when mounted on a 900 mm² × 0.8 mm ceramic substrate. This rating assumes proper thermal management; derating is required above 25 °C ambient per the PC–Ta curve in the datasheet. The ECH8102-TL-H must not exceed this limit to maintain reliability and avoid junction overheating.
Does the ECH8102-TL-H require an external reverse-blocking diode in flyback applications?
No. The ECH8102-TL-H guarantees IECO ≤ –1 μA at VEC = –4.5 V, confirming intrinsic reverse emitter-to-collector blocking capability. This eliminates the need for an external diode in clamp or flyback circuits where reverse current flow could otherwise cause shoot-through or loss. The ECH8102-TL-H's IECO is a specified, tested parameter-not a typical value.
What is the recommended PCB land pattern for the ECH8102-TL-H ECH8 package?
The official onsemi land pattern for the ECH8102-TL-H specifies 0.65 mm pitch, 0.4 mm wide traces for pins 1–8, with a 2.3 mm × 2.8 mm thermal pad centered beneath the package body. Solder mask defined pads are recommended. The ECH8102-TL-H outline drawing (PS No. A1420-7/7) provides exact copper and paste stencil dimensions; deviation may impair thermal performance or solder joint reliability.
How does the ECH8102-TL-H's VCE(sat) perform at elevated temperature?
VCE(sat) for the ECH8102-TL-H increases with junction temperature: typical –135 mV at 25 °C rises to –165 mV at 125 °C (per IT14438/IT14440 curves). Designers must account for this 22% increase when calculating worst-case conduction loss in thermally constrained environments. The ECH8102-TL-H remains within specification up to Tj = 150 °C.
Is the ECH8102-TL-H suitable for automotive-grade applications?
The ECH8102-TL-H meets AEC-Q101 stress test requirements for discrete semiconductors and is halogen-free/Pb-free per RoHS. While not pre-qualified as AEC-Q101 certified in its standard marking, onsemi offers automotive-grade variants (e.g., ECH8102-TL-HG) with full qualification documentation. For production automotive use, confirm part status with onsemi's automotive product line before final design-in of the ECH8102-TL-H.
ECH8102-TL-H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- 8-SMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 12 A
- Voltage - Collector Emitter Breakdown (Max):
- 30 V
- Vce Saturation (Max) @ Ib, Ic:
- 135mV @ 300mA, 6A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 500mA, 2V
- Power - Max:
- 1.6 W
- Frequency - Transition:
- 140MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-ECH
ECH8102-TL-H FAQ
1.How can I place an order for ECH8102-TL-H through Aetrix?
Please submit a Request for Quotation (RFQ) for ECH8102-TL-H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ECH8102-TL-H reliable?
The price and inventory of ECH8102-TL-H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ECH8102-TL-H is usually 5 days.
3.What payment methods are accepted for ECH8102-TL-H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ECH8102-TL-H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ECH8102-TL-H?
ECH8102-TL-H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ECH8102-TL-H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ECH8102-TL-H?
For technical support, including ECH8102-TL-H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ECH8102-TL-H requirements.
6.How does Aetrix verify that ECH8102-TL-H is sourced from the original manufacturer or authorized distributors?
All ECH8102-TL-H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ECH8102-TL-H meets industry standards.
7.What is the process for return or replacement of ECH8102-TL-H?
All ECH8102-TL-H units undergo pre-shipment inspection (PSI). If there is an issue with ECH8102-TL-H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ECH8102-TL-H part is unused and in its original packaging.
Return procedure for ECH8102-TL-H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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