Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division EGF1THE3/67A

Part No.:
EGF1THE3/67A
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Single Diodes
Package:
DO-214BA
Datasheet:
AetrixEGF1THE3/67A.pdf
Description:
DIODE GEN PURP 1.3KV 1A DO214BA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,844

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

EGF1THE3/67A from Vishay General Semiconductor is a surface-mount glass-passivated ultrafast rectifier diode in DO-214BA (GF1) package, rated for 1300 V repetitive peak reverse voltage, 1.0 A average forward current, and 75 ns typical reverse recovery time. It delivers low switching losses and 15 mJ non-repetitive avalanche energy, and is AEC-Q101 qualified for automotive photoflash and high-voltage DC-DC converter applications.

For engineers reviewing the EGF1THE3/67A datasheet, EGF1THE3/67A pinout, EGF1THE3/67A application, or EGF1THE3/67A equivalent, key selection criteria include ultrafast trr performance, avalanche ruggedness, RoHS-compliant matte tin terminations, and MSL Level 1 moisture sensitivity rating with 250 °C peak reflow tolerance.

Technical Context

This discrete ultrafast rectifier employs a Superectifier® structure with cavity-free glass-passivated junction to ensure high reliability under repetitive surge and thermal stress. Its 75 ns reverse recovery time and 3.0 V forward voltage at 1.0 A enable efficient high-frequency switching in flyback and boost topologies.

The device operates across –55 °C to +150 °C junction temperature range, supports 20 A non-repetitive surge current (8.3 ms half-sine), and exhibits only 5.0 µA reverse leakage at 25 °C - critical for maintaining efficiency in high-impedance hold circuits.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM1300 V - supports primary-side rectification in 1000 V-class AC/DC and photoflash capacitor discharge circuits
IF(AV)1.0 A - continuous conduction mode operation up to ambient 75 °C on standard PCB copper pad
trr75 ns - enables switching frequencies >100 kHz with minimal commutation loss in SMPS
EAS15 mJ - withstands single-event inductive energy spikes without failure in relay driver or solenoid interfaces
VF @ 1.0 A3.0 V - contributes ≤3 W conduction loss at full load, enabling thermally constrained board layouts
Junction Temp–55 to +150 °C - validated for under-hood automotive environments per AEC-Q101 stress testing
CJ8.0 pF @ 4 V - minimizes capacitive coupling noise in high-dv/dt gate drive isolation paths

Pinout & Package

Package: GF1 (DO-214BA) - molded plastic over glass body, UL 94 V-0 rated, with matte tin-plated leads solderable per J-STD-002. Cathode identified by color band.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry nodeConnected to transformer secondary or switch node; must handle 20 A surge without bond wire lift
CathodeForward current exit nodeMarked with color band; ties to output filter capacitor or ground return path in flyback designs

Key Features

FeatureDesign Value
Superectifier® structureEliminates micro-cavities at junction interface, improving long-term reliability under thermal cycling
AEC-Q101 qualificationValidated for automotive-grade stress including HTOL, TC, and HAST - suitable for ADAS power supplies
MSL Level 1 ratingEnables direct placement into high-volume SMT lines without baking, even after extended storage
Ultrafast 75 ns trrReduces reverse recovery charge Qrr, lowering EMI generation in adjacent signal traces
15 mJ EASProvides margin against inductive kickback in photoflash charging circuits with large energy storage caps

Applications

Photoflash Power SupplyIndustrial HV DC-DC Converter

Use Scenario: Rapid charging of high-capacitance flash capacitors (≥300 µF) from 300–400 V DC bus.

IC Role / Device Role / Timing Role: Ultrafast rectifier in voltage multiplier or doubler stage, handling repetitive 20 A surge pulses.

Use Value: 75 ns trr prevents reverse conduction overlap during fast switching, preserving capacitor charge efficiency.

Use Scenario: Secondary-side rectification in isolated 1 kV-output telecom or test equipment power supplies.

IC Role / Device Role / Timing Role: High-voltage output rectifier in synchronous or quasi-resonant flyback converters.

Use Value: 1300 V VRRM provides 3× safety margin over 400 V RMS input, meeting IEC 62368 creepage requirements.

Automotive LED DriverAC Line Input Protection

Use Scenario: Boost converter input rectification in headlamp modules operating in under-hood environments.

IC Role / Device Role / Timing Role: Input bridge leg rectifier exposed to 12–16 V battery transients and load dump events.

Use Value: AEC-Q101 qualification and 15 mJ EAS ensure survival during ISO 7637-2 Pulse 5a load dump surges.

Use Scenario: Clamping and rectification in AC mains surge protection circuits with MOV+TVS coordination.

IC Role / Device Role / Timing Role: Fast-recovery clamp diode in series with varistors to limit let-through voltage during line transients.

Use Value: 75 ns trr and low CJ (8.0 pF) minimize transient response delay and parasitic resonance with MOV capacitance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Vishay EGP10BHE3/ALower VRRM (1000 V), same DO-214BA package, 60 ns trr, 2.8 V VFBetter suited for 600–800 V DC bus systems where lower voltage rating is acceptableSelect when faster recovery and lower forward drop are prioritized over 1300 V capability
ON Semiconductor MUR1100ESame 1300 V rating, TO-220AC package, 100 ns trr, 3.3 V VF, no AEC-Q101Requires through-hole mounting; not qualified for automotive useChoose only for legacy through-hole designs or non-automotive industrial applications requiring higher surge margin

Compared with EGP10BHE3/A and MUR1100E, the EGF1THE3/67A uniquely combines 1300 V rating, AEC-Q101 qualification, and surface-mount DO-214BA packaging - making it the only option for new automotive photoflash or space-constrained HV rectification where both ruggedness and SMT compatibility are mandatory.

Availability

EGF1THE3/67A is available at Aetrix Electronics and suitable for photoflash power supplies, automotive LED drivers, and industrial HV DC-DC converters requiring stable component supply and long-term lifecycle support.

Supply support for EGF1THE3/67A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability and automotive-grade validation.

The EGF1THE3/67A belongs to Vishay's Superectifier® ultrafast rectifier product line, engineered specifically for high-efficiency, high-voltage switching power supplies where fast recovery, avalanche robustness, and AEC-Q101 compliance are essential.

FAQ

What is the maximum junction temperature rating for EGF1THE3/67A?

The EGF1THE3/67A has a maximum junction temperature (TJ) of +150 °C and a storage temperature range of –55 °C to +150 °C. This rating is validated per AEC-Q101 stress testing and allows operation in under-hood automotive environments. Derating curves in the Vishay datasheet (Doc. #88904) specify that average forward current must be reduced above 75 °C ambient to maintain safe junction temperatures. The EGF1THE3/67A thermal resistance RθJA is 50 °C/W on standard PCB mounting.

Is EGF1THE3/67A RoHS-compliant and lead-free?

Yes, the EGF1THE3/67A is RoHS-compliant and lead-free. The "HE3" suffix denotes compliance with EU RoHS Directive 2011/65/EU and JEDEC JS709E. Terminations are matte tin plated, solderable per J-STD-002, and pass JESD201 Class 2 whisker testing. The base P/N HE3_X format (where X = revision code) explicitly confirms RoHS and AEC-Q101 qualification per Vishay documentation.

Does EGF1THE3/67A have a specified reverse recovery charge (Qrr) value?

The Vishay datasheet for EGF1THE3/67A does not publish a guaranteed Qrr value. However, its typical reverse recovery time (trr) is 75 ns under IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A conditions. Since Qrr correlates strongly with trr and di/dt, design estimates may derive Qrr using measured waveforms or SPICE models from Vishay's online simulation tools. For critical timing analysis, engineers should validate Qrr empirically in their specific circuit.

What is the meaning of the "67A" suffix in EGF1THE3/67A?

The "67A" suffix in EGF1THE3/67A is a Vishay internal manufacturing code indicating tape-and-reel packaging configuration and revision level. Specifically, "67" refers to the reel size and orientation specification, while "A" denotes the revision code for the HE3 packaging variant. This matches the ordering example EGF1THE3_A/H in the datasheet, where "A" corresponds to the first qualified revision of the RoHS-compliant, AEC-Q101-qualified version of the EGF1T device.

Can EGF1THE3/67A replace older EGF1T devices in existing designs?

Yes, EGF1THE3/67A is a direct replacement for legacy EGF1T devices, retaining identical electrical specifications, DO-214BA package dimensions, and pinout. The HE3 suffix adds RoHS compliance, AEC-Q101 qualification, and enhanced whisker resistance - all backward-compatible enhancements. No PCB or schematic changes are required. Note that Vishay marks the base EGF1T as "Not for New Designs", confirming EGF1THE3/67A as its designated successor.

EGF1THE3/67A Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
Superectifier®
Package/Case:
DO-214BA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
1300 V
Current - Average Rectified (Io):
1A
Voltage - Forward (Vf) (Max) @ If:
3 V @ 1 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
75 ns
Current - Reverse Leakage @ Vr:
5 µA @ 1300 V
Capacitance @ Vr, F:
-
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214BA (GF1)
Operating Temperature - Junction:
-55°C ~ 150°C

EGF1THE3/67A FAQ

1.How can I place an order for EGF1THE3/67A through Aetrix?

Please submit a Request for Quotation (RFQ) for EGF1THE3/67A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for EGF1THE3/67A reliable?

The price and inventory of EGF1THE3/67A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for EGF1THE3/67A is usually 5 days.

3.What payment methods are accepted for EGF1THE3/67A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for EGF1THE3/67A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for EGF1THE3/67A?

EGF1THE3/67A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your EGF1THE3/67A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for EGF1THE3/67A?

For technical support, including EGF1THE3/67A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your EGF1THE3/67A requirements.

6.How does Aetrix verify that EGF1THE3/67A is sourced from the original manufacturer or authorized distributors?

All EGF1THE3/67A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that EGF1THE3/67A meets industry standards.

7.What is the process for return or replacement of EGF1THE3/67A?

All EGF1THE3/67A units undergo pre-shipment inspection (PSI). If there is an issue with EGF1THE3/67A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The EGF1THE3/67A part is unused and in its original packaging.

Return procedure for EGF1THE3/67A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

EGF1THE3/67A Tags

  • EGF1THE3/67A
  • EGF1THE3/67A PDF
  • EGF1THE3/67A Datasheet
  • EGF1THE3/67A Specifications
  • EGF1THE3/67A Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division EGF1THE3/67A
  • Buy EGF1THE3/67A
  • EGF1THE3/67A Price
  • EGF1THE3/67A Distributor
  • EGF1THE3/67A Supplier
  • EGF1THE3/67A Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER