Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division ES2GHE3_A/H

Part No.:
ES2GHE3_A/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Single Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixES2GHE3_A/H.pdf
Description:
DIODE GEN PURP 300V 2A DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:10,152

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ES2GHE3_A/H from Vishay General Semiconductor is an AEC-Q101-qualified surface-mount ultrafast plastic rectifier in SMB (DO-214AA) package, rated for 400 V repetitive peak reverse voltage (VRRM), 2.0 A average forward current (IF(AV)), and 35 ns reverse recovery time (trr), used for high-frequency freewheeling and rectification in automotive DC/DC converters.

For engineers reviewing the ES2GHE3_A/H datasheet, ES2GHE3_A/H pinout, ES2GHE3_A/H application, or ES2GHE3_A/H equivalent, key selection criteria include its AEC-Q101 qualification, 150 °C maximum junction temperature, 50 A non-repetitive surge rating, low 1.1 V forward voltage at 2.0 A, and SMB package compatibility with automated SMT assembly.

Technical Context

This device is a single-die, single-anode/cathode silicon PN junction rectifier optimized for fast switching in high-frequency power conversion. Its 35 ns reverse recovery time (measured at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 IRM) and 50 nC stored charge (Qrr) enable reduced switching losses in SMPS topologies.

The ES2GHE3_A/H uses glass-passivated pellet chip construction, supports lead-free soldering per J-STD-002/JESD 22-B102, and meets MSL level 1 per J-STD-020 with 260 °C peak reflow profile - confirming suitability for high-reliability automotive PCB assembly.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM400 V - supports input stages up to 280 V RMS in offline AC/DC or 400 V bus in automotive 48 V systems
IF(AV)2.0 A at TL = 110 °C - enables continuous conduction mode operation in compact 1–2 W output converters
trr35 ns - minimizes turn-off loss and EMI generation in >100 kHz switching applications
VF @ 2.0 A1.1 V - reduces conduction loss to ~2.2 W at full load, easing thermal design in confined layouts
Qrr50 nC - limits reverse recovery energy dissipation during hard-switched transitions
TJ(max)150 °C - allows operation in under-hood automotive environments without derating below 110 °C board temperature
RθJA75 °C/W - requires ≥5 mm × 5 mm copper pad for safe operation at full IF(AV)

Pinout & Package

Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads; polarity indicated by cathode band; RoHS-compliant and AEC-Q101 qualified (HE3 suffix).

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry nodeConnected to lower-potential side of switched node (e.g., MOSFET source or inductor return)
CathodeForward current exit nodeConnected to output rail or positive bus; marked by color band on package body

Key Features

FeatureDesign Value
Glass passivated junctionEnhances humidity resistance and long-term reliability in automotive under-hood conditions
AEC-Q101 qualificationValidated for automotive powertrain and chassis applications per stress test requirements
MSL Level 1 ratingEnables direct placement into reflow oven without dry-pack or baking preconditioning
50 A IFSM surge ratingWithstands inrush and fault currents in 48 V battery-fed systems without catastrophic failure
15 pF junction capacitanceMinimizes capacitive coupling noise in high dv/dt gate-drive or snubber circuits

Applications

Automotive DC/DC ConvertersServer VRM Freewheeling

Use Scenario: Step-down conversion from 48 V battery to 12 V subsystem rail in ADAS domain controllers.

IC Role / Device Role / Timing Role: Freewheeling diode in synchronous buck converter, conducting during high-side FET off-time.

Use Value: 35 ns trr and 1.1 V VF reduce switching loss and improve efficiency above 92 % at 1 MHz operation.

Use Scenario: Output rectification in multiphase CPU voltage regulator modules with >500 kHz switching frequency.

IC Role / Device Role / Timing Role: Secondary-side uncontrolled rectifier replacing Schottky diodes where higher VRRM is required.

Use Value: 400 V VRRM supports transient overvoltage tolerance beyond typical 12 V rail swings, improving system robustness.

Industrial SMPS OutputsTelecom AC/DC Front-Ends

Use Scenario: 24 V/2 A auxiliary supply in PLC backplanes operating continuously at 60 °C ambient.

IC Role / Device Role / Timing Role: Output rectifier in flyback or forward converter delivering regulated isolated power.

Use Value: 150 °C TJ(max) and 75 °C/W RθJA allow stable operation without heatsink on standard FR4 PCBs.

Use Scenario: Input bridge rectification stage in universal-input (90–264 VAC) telecom power supplies.

IC Role / Device Role / Timing Role: High-voltage leg in discrete bridge configuration handling 400 V PIV demands.

Use Value: 400 V VRRM and 200 µA IR at 100 °C ensure low leakage and stable hold-up during brownouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STTH2R04DJFTO-277 package (SMD), 400 V VRRM, 30 ns trr, 1.15 V VF, no AEC-Q101 ratingHigher-speed alternative but lacks automotive qualification and has different thermal pad layoutSelect when faster recovery is critical and automotive qualification is not required
ON Semi MUR240HE3_A/HSMB package, 400 V VRRM, 60 ns trr, 1.3 V VF, AEC-Q101 qualifiedSlower recovery and higher forward drop increase conduction loss in high-frequency designsSelect when cost sensitivity outweighs efficiency targets and lower EMI is acceptable

Compared with STTH2R04DJF and MUR240HE3_A/H, the ES2GHE3_A/H delivers optimal balance of AEC-Q101 compliance, 35 ns recovery speed, and 1.1 V forward voltage - making it preferred for thermally constrained, high-efficiency automotive DC/DC converters where both reliability and switching performance matter.

Availability

ES2GHE3_A/H is available at Aetrix Electronics and suitable for automotive power conversion, industrial SMPS, and telecom rectification requiring stable component supply, AEC-Q101 traceability, and consistent SMB package delivery.

Supply support for ES2GHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability and automotive-grade validation.

The ES2GHE3_A/H belongs to Vishay's ES2x ultrafast rectifier family, designed specifically for high-frequency, high-reliability power conversion in automotive and industrial environments where fast recovery and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum junction temperature rating for ES2GHE3_A/H?

The ES2GHE3_A/H has a maximum junction temperature (TJ(max)) of 150 °C, enabling reliable operation in under-hood automotive environments and high-ambient industrial settings. This rating is validated per AEC-Q101 stress testing and allows full 2.0 A average current derating only above 110 °C board temperature. The ES2GHE3_A/H maintains stable electrical parameters across this range when mounted on a 5 mm × 5 mm copper pad.

Is ES2GHE3_A/H pin-compatible with ES2FHE3_A/H?

Yes, ES2GHE3_A/H and ES2FHE3_A/H share identical SMB (DO-214AA) package dimensions, anode/cathode terminal locations, and polarity marking - making them mechanically interchangeable. However, ES2GHE3_A/H is rated for 400 V VRRM, while ES2FHE3_A/H is rated for 300 V; substituting one for the other requires verification of voltage margin in the target circuit. Both carry the HE3 suffix confirming AEC-Q101 qualification.

Does ES2GHE3_A/H meet lead-free soldering standards?

Yes, ES2GHE3_A/H features matte tin-plated leads compliant with J-STD-002 and JESD 22-B102, supporting lead-free reflow soldering up to 260 °C peak temperature. It is rated MSL Level 1 per J-STD-020, meaning it can be placed directly onto PCBs without dry-pack storage or baking - simplifying manufacturing flow for high-volume automotive SMT lines using the ES2GHE3_A/H.

What is the reverse recovery time specification for ES2GHE3_A/H?

The ES2GHE3_A/H has a maximum reverse recovery time (trr) of 35 ns under the test condition IF = 0.5 A, IR = 1.0 A, Irr = 0.25 IRM. An alternate condition (IF = 1.0 A, dI/dt = 100 A/μs) yields 50 ns. This fast recovery minimizes switching loss and EMI in converters operating above 100 kHz, and is a key differentiator versus standard fast recovery diodes like the MUR240HE3_A/H.

How does the AEC-Q101 qualification impact ES2GHE3_A/H usage?

The AEC-Q101 qualification of ES2GHE3_A/H confirms it has passed accelerated stress tests for temperature cycling, humidity bias, HTRB, and ESD - validating suitability for automotive powertrain, chassis, and ADAS applications. Unlike commercial-grade ES2G-E3 variants, the ES2GHE3_A/H provides documented reliability data and lot-level traceability required by Tier 1 suppliers, making it mandatory for functional-safety-aware designs where the ES2GHE3_A/H is deployed.

ES2GHE3_A/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
-
Package/Case:
DO-214AA, SMB
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
300 V
Current - Average Rectified (Io):
2A
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 2 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
35 ns
Current - Reverse Leakage @ Vr:
10 µA @ 50 V
Capacitance @ Vr, F:
15pF @ 4V, 1MHz
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)
Operating Temperature - Junction:
-55°C ~ 150°C

ES2GHE3_A/H FAQ

1.How can I place an order for ES2GHE3_A/H through Aetrix?

Please submit a Request for Quotation (RFQ) for ES2GHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ES2GHE3_A/H reliable?

The price and inventory of ES2GHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ES2GHE3_A/H is usually 5 days.

3.What payment methods are accepted for ES2GHE3_A/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ES2GHE3_A/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ES2GHE3_A/H?

ES2GHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ES2GHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ES2GHE3_A/H?

For technical support, including ES2GHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ES2GHE3_A/H requirements.

6.How does Aetrix verify that ES2GHE3_A/H is sourced from the original manufacturer or authorized distributors?

All ES2GHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ES2GHE3_A/H meets industry standards.

7.What is the process for return or replacement of ES2GHE3_A/H?

All ES2GHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with ES2GHE3_A/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ES2GHE3_A/H part is unused and in its original packaging.

Return procedure for ES2GHE3_A/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ES2GHE3_A/H Tags

  • ES2GHE3_A/H
  • ES2GHE3_A/H PDF
  • ES2GHE3_A/H Datasheet
  • ES2GHE3_A/H Specifications
  • ES2GHE3_A/H Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division ES2GHE3_A/H
  • Buy ES2GHE3_A/H
  • ES2GHE3_A/H Price
  • ES2GHE3_A/H Distributor
  • ES2GHE3_A/H Supplier
  • ES2GHE3_A/H Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER