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Vishay General Semiconductor - Diodes Division ESH1DHE3_A/I
- Part No.:
- ESH1DHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
ESH1DHE3_A/I.pdf
- Description:
- DIODE GEN PURP 200V 1A DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:7,120
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Product details
Overview
ESH1DHE3_A/I from Vishay General Semiconductor is an AEC-Q101-qualified surface-mount ultrafast plastic rectifier diode in SMA (DO-214AC) package, rated for 200 V repetitive peak reverse voltage, 1.0 A average forward current, and 25 ns reverse recovery time at 25 °C. It operates up to 175 °C junction temperature with 0.90 V forward voltage at 1 A, serving as a secondary rectifier or freewheeling diode in high-frequency DC/DC converters under elevated thermal stress.
For engineers reviewing the ESH1DHE3_A/I datasheet, ESH1DHE3_A/I pinout, ESH1DHE3_A/I application, or ESH1DHE3_A/I equivalent, this part supports automotive-grade power conversion where low forward loss, fast switching, and high-temperature reliability are critical - especially in engine control units, ADAS power supplies, and on-board chargers requiring MSL Level 1 and JESD 201 Class 2 whisker resistance.
Technical Context
The ESH1DHE3_A/I implements a single silicon PN junction with glass-passivated pellet construction, enabling ultrafast recovery (25 ns typical at IF = 0.5 A, IR = 1 A, Irr = 0.25 A) and low stored charge (10 nC at TJ = 25 °C). Its thermal resistance is 30 °C/W junction-to-lead (RθJL), optimized for PCB-mounted operation with 5.0 mm × 5.0 mm copper pads.
This diode is configured as a unidirectional, polarity-marked (cathode band) discrete rectifier. It delivers stable reverse leakage (<1.0 μA at 25 °C, <50 μA at VR = 20 V / TJ = 150 °C) and exhibits 25 pF junction capacitance at 4.0 V / 1 MHz - characteristics essential for minimizing switching losses in >100 kHz topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 200 V - maximum repetitive reverse blocking capability without breakdown |
| IF(AV) | 1.0 A at TL = 150 °C - continuous DC output current rating with defined lead temperature limit |
| trr | 25 ns - reverse recovery time enabling efficient operation in 500 kHz+ switching converters |
| VF @ 1 A | 0.90 V - forward voltage drop directly determining conduction loss and thermal load |
| TJ max. | 175 °C - maximum allowable junction temperature supporting under-hood automotive use |
| IR @ 25 °C | 1.0 μA - low reverse leakage preserving efficiency in high-impedance bias networks |
| Qrr | 10 nC at 25 °C - stored charge governing turn-off energy loss and EMI generation |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, low-profile plastic case with matte tin-plated leads compliant with J-STD-002 and JESD 22-B102 solderability standards. Polarity indicated by cathode band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential side of circuit; accepts input during conduction phase |
| Cathode | Forward current exit point / reverse blocking terminal | Marked with color band; connects to higher-potential node; blocks reverse voltage up to 200 V |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine control, body electronics, and ADAS power stages |
| Glass-passivated junction | Enhances long-term reliability and moisture resistance in harsh environments |
| MSL Level 1 (260 °C peak) | Enables standard reflow assembly without preconditioning or special handling |
| Junction-to-lead thermal resistance (RθJL) | 30 °C/W - enables effective heat transfer to PCB copper, reducing thermal derating penalties |
| Low forward voltage (0.90 V @ 1 A) | Reduces conduction loss by ~15% versus comparable 1 A ultrafast diodes with VF > 1.05 V |
Applications
| Engine Control Unit (ECU) Power Supply | Automotive ADAS Camera Module |
|---|---|
Use Scenario: Rectifying switched-mode output in 12 V–5 V buck converter supplying microcontroller and sensor rails. IC Role / Device Role / Timing Role: Secondary-side ultrafast rectifier managing high-frequency (300–600 kHz) flyback or synchronous rectification path. Use Value: 25 ns trr minimizes reverse recovery loss; 175 °C TJ max ensures stability near hot engine bay components. | Use Scenario: Freewheeling path for solenoid-driven lens actuator and image sensor bias sequencing. IC Role / Device Role / Timing Role: Clamp diode absorbing inductive kickback during rapid PWM-controlled actuator de-energization. Use Value: Low Qrr (10 nC) reduces voltage overshoot and EMI; AEC-Q101 compliance guarantees field reliability. |
| On-Board Charger (OBC) Auxiliary Supply | Industrial Motor Drive Gate Driver Isolation |
Use Scenario: Output rectification in isolated flyback supplying gate drivers and MCU for 400 V battery interface. IC Role / Device Role / Timing Role: High-voltage (200 V VRRM), high-temperature rectifier in auxiliary 15 V/1 A supply stage. Use Value: 200 V blocking margin accommodates reflected transients; RθJL = 30 °C/W sustains output under 85 °C ambient. | Use Scenario: Isolated DC/DC converter output rectification powering optocoupler or SiC gate driver bias rails. IC Role / Device Role / Timing Role: Ultrafast freewheeling diode in 100–200 kHz isolated DC/DC stage feeding isolated logic-level supplies. Use Value: 25 pF CJ limits capacitive coupling noise across isolation barrier; low VF improves light-load regulation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH1R02UFY | 200 V VRRM, 1.0 A IF(AV), 30 ns trr, TO-277 package (no leads) | Requires different footprint and thermal pad design; lacks AEC-Q101 qualification | Select when leadless mounting and higher surge immunity (IFSM = 60 A) are prioritized over automotive qualification |
| ON Semi MUR120E | 200 V VRRM, 1.0 A IF(AV), 35 ns trr, DO-41 through-hole package | Through-hole assembly only; not suitable for automated SMT lines or high-density layouts | Choose for legacy designs or prototyping where manual assembly and lower cost outweigh SMT compatibility needs |
Compared with STTH1R02UFY and MUR120E, the ESH1DHE3_A/I uniquely combines AEC-Q101 qualification, SMA surface-mount compatibility, 25 ns trr, and 175 °C operation - making it the preferred choice for production automotive SMT power supplies where reliability, thermal headroom, and assembly scalability are jointly required.
Availability
ESH1DHE3_A/I is available at Aetrix Electronics and suitable for automotive power conversion, industrial DC/DC auxiliary supplies, and ADAS camera module designs requiring stable component supply, full traceability, and lifecycle continuity.
Supply support for ESH1DHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, efficiency, and application-specific validation.
The ESH1DHE3_A/I belongs to Vishay's ESH1x ultrafast rectifier family, engineered for high-efficiency, high-temperature switching power supplies in automotive and industrial systems where fast recovery, low VF, and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum junction temperature rating for ESH1DHE3_A/I?
The ESH1DHE3_A/I has a maximum junction temperature (TJ max.) of +175 °C, verified per Vishay's qualification testing and documented in the 88890 datasheet. This rating allows reliable operation in under-hood automotive environments and high-ambient industrial settings. Derating curves confirm sustained 1.0 A average forward current capability at lead temperature (TL) up to 150 °C, with thermal resistance RθJL = 30 °C/W ensuring predictable junction-to-PCB heat transfer. The ESH1DHE3_A/I must be mounted on specified 5.0 mm × 5.0 mm copper land areas to achieve this rating.
Is ESH1DHE3_A/I qualified to AEC-Q101 standards?
Yes, ESH1DHE3_A/I is explicitly AEC-Q101 qualified, as confirmed in the Vishay document 88890 revision 08-Apr-2020. The "HE3" suffix denotes RoHS-compliant and AEC-Q101-qualified versions, and the datasheet states "AEC-Q101 qualified" in both the FEATURES and MAXIMUM RATINGS sections. This qualification covers stress tests including temperature cycling, high-temperature operating life, and unbiased highly accelerated stress testing - validating ESH1DHE3_A/I for automotive power electronics such as ECUs and ADAS modules.
What does the "_A/I" suffix mean in ESH1DHE3_A/I?
The "_A/I" suffix in ESH1DHE3_A/I indicates two specific attributes: "A" is the revision code denoting the current version of the device specification, and "I" is the preferred package code specifying 13-inch diameter plastic tape and reel delivery containing 7500 units. This packaging format is optimized for high-volume SMT placement equipment. The base part ESH1DHE3 denotes the AEC-Q101-qualified, 200 V, 1 A ultrafast rectifier in SMA package; the full ordering code ESH1DHE3_A/I ensures correct material traceability and logistics alignment for production builds.
What is the reverse recovery time (trr) of ESH1DHE3_A/I, and under what conditions is it measured?
The ESH1DHE3_A/I has a maximum reverse recovery time (trr) of 25 ns, measured under JEDEC-standard conditions: IF = 0.5 A forward current, IR = 1 A reverse current, and Irr = 0.25 A reverse recovery current. This value is confirmed in the ELECTRICAL CHARACTERISTICS table of the Vishay 88890 datasheet. At 100 °C junction temperature, typical trr increases to 35 ns. The low trr enables high-frequency operation (>300 kHz) with minimal switching loss and reduced EMI generation - a key advantage of the ESH1DHE3_A/I in modern compact power supplies.
Does ESH1DHE3_A/I have a halogen-free option?
No, ESH1DHE3_A/I is RoHS-compliant but not halogen-free. Per the Vishay 88890 datasheet, halogen-free variants carry the "HM3" suffix (e.g., ESH1DHM3_A/I). The "HE3" suffix in ESH1DHE3_A/I specifies RoHS-compliance and AEC-Q101 qualification only. Material categorization data confirms that HE3 parts meet RoHS requirements but do not satisfy halogen-free definitions per IEC 61249-2-21. For halogen-free compliance in automotive or green-electronics programs, ESH1DHM3_A/I is the designated alternative.
ESH1DHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- DO-214AC, SMA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 900 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 25 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 200 V
- Capacitance @ Vr, F:
- 25pF @ 4V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
- Operating Temperature - Junction:
- -55°C ~ 175°C
ESH1DHE3_A/I FAQ
1.How can I place an order for ESH1DHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for ESH1DHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESH1DHE3_A/I reliable?
The price and inventory of ESH1DHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESH1DHE3_A/I is usually 5 days.
3.What payment methods are accepted for ESH1DHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESH1DHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESH1DHE3_A/I?
ESH1DHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESH1DHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESH1DHE3_A/I?
For technical support, including ESH1DHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESH1DHE3_A/I requirements.
6.How does Aetrix verify that ESH1DHE3_A/I is sourced from the original manufacturer or authorized distributors?
All ESH1DHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESH1DHE3_A/I meets industry standards.
7.What is the process for return or replacement of ESH1DHE3_A/I?
All ESH1DHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with ESH1DHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESH1DHE3_A/I part is unused and in its original packaging.
Return procedure for ESH1DHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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