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STMicroelectronics ESM2012DV
- Part No.:
- ESM2012DV
- Manufacturer:
- STMicroelectronics
- Category:
- Single Bipolar Transistors
- Package:
- ISOTOP
- Datasheet:
-
ESM2012DV.pdf
- Description:
- TRANS NPN DARL 120V 120A ISOTOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,771
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Product details
Overview
ESM2012DV from STMicroelectronics is a high-current NPN Darlington power module integrating an ultrafast freewheeling diode in a fully insulated ISOTOP package, rated for 120 A continuous collector current, 150 V VCEV, and 175 W dissipation at Tc = 25 °C; used in industrial motor control inverters and UPS output stages.
For engineers reviewing the ESM2012DV datasheet, ESM2012DV pinout, ESM2012DV application, or ESM2012DV equivalent, key selection criteria include its 0.7 °C/W Rthj-case (transistor), 1200 hFE at 100 A, 1.5 V VCE(sat) at 100 A/1 A, 2500 VRMS insulation rating, and integrated diode with 0.92 V VF at 100 A/100 °C.
Technical Context
The ESM2012DV implements a monolithic Darlington pair with built-in base-emitter resistor network and a co-packaged ultrafast recovery diode, enabling high-gain switching with low drive requirements and reduced external snubber needs. Its SOA includes specified accidental overload areas up to 180 A peak for 10 ms.
Thermal design is enabled by ultra-low junction-to-case resistance (0.7 °C/W for transistor, 0.9 °C/W for diode) and a UL-compliant fully insulated package requiring no additional isolation hardware when mounted to a heatsink. The 0.05 °C/W Rthc-h (with grease) supports high-power density layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEV | 150 V - Maximum non-repetitive collector-emitter voltage with VBE = −5 V; defines safe blocking capability during transient overvoltage events. |
| IC | 120 A - Continuous collector current at Tc = 25 °C; sets steady-state conduction capacity for motor drive H-bridge legs. |
| hFE | 1200 - DC current gain at IC = 100 A, VCE = 5 V; enables low-base-drive-current operation in high-power linear or switching amplifiers. |
| VCE(sat) | 1.5 V - Saturation voltage at IC = 100 A, IB = 1 A, Tj = 100 °C; directly determines conduction loss (Pcond ≈ 150 W at full load). |
| VF | 0.92 V - Diode forward voltage at IF = 100 A, Tj = 100 °C; minimizes freewheeling loss in DC/DC and inverter freewheel paths. |
| Rthj-case | 0.7 °C/W - Max thermal resistance from transistor junction to case; enables compact heatsink sizing for 175 W dissipation. |
| Visol | 2500 VRMS - Insulation withstand voltage from all four terminals to external heatsink; eliminates need for insulating pads in UL-certified systems. |
Pinout & Package
ESM2012DV uses the ISOTOP package: a 4-terminal, fully insulated, stud-mount power module with copper baseplate and molded epoxy housing. Dimensions per STMicroelectronics mechanical drawing P093A (D = 38.0 mm, E = 25.3 mm, G = 15.0 mm, height ≈ 8.0 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main high-side power terminal for Darlington transistor | Carries full load current (up to 120 A); electrically isolated from heatsink; connects to DC bus or inverter phase output. |
| Emitter (E) | Transistor emitter and diode cathode common node | Provides low-inductance return path for both transistor and diode; serves as power ground reference in half-bridge configurations. |
| Base (B) | Control input for Darlington transistor | Accepts low-current drive (≤2 A) to switch 120 A load; internal base resistors simplify gate driver interface. |
| Diode Anode (A) | Anode of integrated ultrafast freewheeling diode | Connects to DC link or inductive load return; enables bidirectional current flow during inductive flyback without external diode. |
Key Features
| Feature | Design Value |
|---|---|
| Fully insulated UL-compliant package | 2500 VRMS isolation enables direct mounting to grounded heatsinks in safety-critical industrial UPS and motor drives. |
| Ultra-low Rthj-case (0.7 °C/W) | Reduces junction temperature rise by >30% vs. comparable modules, extending lifetime under 120 A continuous operation. |
| Integrated ultrafast freewheeling diode | 0.92 V VF at 100 A and 100 °C; 14 A IRM reverse recovery peak; eliminates discrete diode placement and layout parasitics. |
| Specified accidental overload SOA | Rated for 180 A peak (10 ms) without destruction; supports short-circuit ride-through in motor protection schemes. |
| Low internal parasitic inductance | Minimizes voltage overshoot during turn-off (VCE(3µs) ≤ 3 V at 90 V, 70 A); reduces snubber component count and size. |
Applications
| Industrial Motor Control | Uninterruptible Power Supplies (UPS) |
|---|---|
|
Use Scenario: Three-phase inverter output stage driving 15–30 kW AC induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: High-current Darlington switch with integrated freewheeling diode in each leg of the inverter bridge. Use Value: 120 A IC and 150 V VCEV support 400 V DC bus operation; low VCE(sat) reduces thermal stress during continuous PWM modulation. |
Use Scenario: Output inverter stage in online double-conversion UPS delivering clean 230 VAC to critical IT loads. IC Role / Device Role / Timing Role: Final power switching element in the DC/AC inverter, handling bidirectional energy flow during battery backup mode. Use Value: Fully insulated ISOTOP package meets UL 1741 creepage/clearance requirements; 2500 VRMS isolation ensures system-level safety certification. |
| DC/DC Converters | DC/AC Inverters |
|
Use Scenario: High-power isolated DC/DC converter (e.g., 48 V to 12 V, 5 kW) for telecom rectifier systems. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology with synchronous rectification on secondary. Use Value: 0.7 °C/W Rthj-case allows >92% efficiency at full load; integrated diode enables active clamp reset without extra components. |
Use Scenario: Grid-tied solar inverter stage converting PV array DC output to synchronized 230 VAC. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration managing reactive power flow and anti-islanding protection. Use Value: Specified reverse-biased SOA and 125 V VCEW support safe operation during grid fault conditions and rapid polarity reversal. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current Darlington power module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN120N120B3 | MOSFET-based, 1200 V/120 A, requires gate driver; no integrated diode; RDS(on) = 12 mΩ; higher switching speed but higher conduction loss at <10 kHz. | Suitable for high-frequency SMPS (>50 kHz); not drop-in for Darlington-driven legacy motor controllers. | Select if system uses dedicated gate drivers and prioritizes switching efficiency over drive simplicity. |
| ON Semiconductor MJD122G | Discrete Darlington transistor, 100 V/8 A, TO-220 package; no insulation, no integrated diode; hFE = 1000–2000; Rthj-case = 2.5 °C/W. | Limited to <1 kW applications; requires external diode and isolation hardware for UPS/motor use. | Use only for prototyping or low-power auxiliary circuits where cost and footprint outweigh reliability and integration. |
Compared with IXGN120N120B3 and MJD122G, ESM2012DV uniquely combines Darlington simplicity, full insulation, integrated diode, and 120 A rating-making it irreplaceable in legacy industrial inverters where drive compatibility, safety compliance, and thermal margin are non-negotiable.
Availability
ESM2012DV is available at Aetrix Electronics and suitable for industrial motor control, uninterruptible power supplies (UPS), and DC/DC converters requiring stable component supply and long-lifecycle support.
Supply support for ESM2012DV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.
The ESM2012DV belongs to ST's high-power discrete module product line, engineered specifically for ruggedized industrial switching applications demanding integrated functionality, thermal robustness, and safety-certified packaging.
FAQ
Is ESM2012DV still in active production?
No-ESM2012DV is marked "Obsolete Product(s)" in its official STMicroelectronics datasheet (Rev. September 2003). It remains available through authorized legacy distributors and Aetrix Electronics' extended-life inventory program with full traceability and quality screening.
What is the recommended heatsink mounting torque for ESM2012DV?
STMicroelectronics specifies 1.2–1.5 N·m for the M4 mounting stud. Exceeding 1.5 N·m risks cracking the ISOTOP epoxy housing or deforming the copper baseplate, compromising thermal performance and insulation integrity.
Can ESM2012DV replace a discrete Darlington + diode pair in an existing PCB layout?
Yes-if the original design uses a 4-terminal stud-mount configuration with matching ISOTOP footprint (P093A). Its integrated diode and insulation eliminate two components and associated layout area, but electrical connections must match C/E/B/A terminal mapping exactly.
Does ESM2012DV require a negative base voltage for safe turn-off?
Yes-datasheet test conditions specify VBB = −5 V during switching characterization. Applying −5 V to the base during turn-off reduces storage time (ts = 0.9–2 µs) and prevents spurious turn-on due to dv/dt coupling in high-noise industrial environments.
ESM2012DV Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- ISOTOP
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Darlington
- Current - Collector (Ic) (Max):
- 120 A
- Voltage - Collector Emitter Breakdown (Max):
- 120 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.5V @ 1A, 100A
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 1200 @ 100A, 5V
- Power - Max:
- 175 W
- Frequency - Transition:
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- ISOTOP®
ESM2012DV FAQ
1.How can I place an order for ESM2012DV through Aetrix?
Please submit a Request for Quotation (RFQ) for ESM2012DV on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESM2012DV reliable?
The price and inventory of ESM2012DV are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESM2012DV is usually 5 days.
3.What payment methods are accepted for ESM2012DV?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESM2012DV transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESM2012DV?
ESM2012DV orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESM2012DV order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESM2012DV?
For technical support, including ESM2012DV datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESM2012DV requirements.
6.How does Aetrix verify that ESM2012DV is sourced from the original manufacturer or authorized distributors?
All ESM2012DV products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESM2012DV meets industry standards.
7.What is the process for return or replacement of ESM2012DV?
All ESM2012DV units undergo pre-shipment inspection (PSI). If there is an issue with ESM2012DV, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESM2012DV part is unused and in its original packaging.
Return procedure for ESM2012DV:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ESM2012DV Tags
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Micro Commercial Co
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MMBT2222A-7-F
Diodes Incorporated
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BC847B,215
Nexperia USA Inc.
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Micro Commercial Co
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