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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

STMicroelectronics ESM2030DV

Name: ESM2030DV
Brand: STMicroelectronics
SKU: ESM2030DV
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ESM2030DV

Manufacturer:: STMicroelectronics

Category:: Single Bipolar Transistors

Package:: ISOTOP

Datasheet:: ESM2030DV.pdf

Description:: TRANS NPN DARL 300V 67A ISOTOP

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Product details

Overview

ESM2030DV from STMicroelectronics is an NPN Darlington power bipolar module with integrated ultrafast freewheeling diode, rated for 400 V V_CEV, 67 A continuous collector current, and 150 W total dissipation at T_c = 25 °C; used in industrial motor control, UPS, and DC/DC converters requiring high-current switching and low thermal resistance.

For engineers reviewing the ESM2030DV datasheet, ESM2030DV pinout, ESM2030DV application, or ESM2030DV equivalent, key selection criteria include its 0.83 °C/W transistor R_thj-case, 2500 V RMS insulation withstand voltage, 300 V V_CEO(sus), 1.25 V V_CE(sat) @ 40 A/0.4 A, and fully insulated ISOTOP package for safe heatsink mounting.

Technical Context

This Darlington module integrates a high-gain (h_FE = 300 min @ 56 A) NPN transistor and a fast-recovery diode in a single fully insulated ISOTOP package. Its design supports snubberless operation up to 300 V under inductive switching (ICW_off = 67 A), with specified safe operating areas for both forward- and reverse-biased conditions.

The module features ultra-low internal parasitic inductance and optimized base drive requirements (IB = 0.4 A for 40 A IC), enabling robust turn-on/turn-off performance (t_s = 2 µs, t_f = 0.35 µs) in hard-switched industrial converters and motor drives operating up to 150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEV	400 V - Maximum collector-emitter voltage with V_BE = −5 V; defines maximum blocking capability during off-state.
I_C	67 A - Continuous collector current rating; sets steady-state conduction capacity without forced cooling.
R_thj-case (transistor)	0.83 °C/W - Junction-to-case thermal resistance; enables high power dissipation with minimal ΔT across case interface.
V_CE(sat)	1.25 V @ 40 A/0.4 A - Low saturation voltage reduces conduction losses in high-current switching applications.
V_F (diode)	1.15 V @ 56 A/100 °C - Forward voltage of integrated freewheeling diode; directly impacts reverse recovery loss and efficiency.
Visol	2500 V RMS - Insulation withstand voltage between all terminals and external heatsink; ensures safety compliance per UL standards.
t_s	2 µs - Storage time under inductive turn-off; critical for predicting switching loss and SOA margin in hard-switched topologies.

Pinout & Package

The ESM2030DV uses the ISOTOP package - a fully insulated, rectangular metal-base power module with four terminals: Collector (C), Emitter (E), Base (B), and Diode Cathode (K). Mounting is via two M4 screws through isolated mounting holes; no external insulator required.

Pin/Terminal	Circuit Role	Design Meaning
C	Transistor collector	Main high-side current path; electrically isolated from heatsink; connects to DC bus or inductive load high side.
E	Transistor emitter / Diode anode	Common node for transistor output and diode anode; serves as return path for main load current and freewheeling current.
B	Transistor base	Control input for Darlington pair; requires 0.4 A DC drive for 40 A I_C; low impedance path minimizes drive loss.
K	Diode cathode	Freewheeling diode output terminal; connects to positive rail to clamp inductive flyback voltage during turn-off.

Key Features

Feature	Design Value
Ultrafast freewheeling diode	IRM = 12–17 A peak reverse recovery current @ di_F/dt = −220 A/µs; enables efficient energy recirculation in PWM motor drives.
Low R_thj-case (transistor)	0.83 °C/W - allows >100 W dissipation with modest heatsink, reducing thermal derating in compact enclosures.
Snubberless switching capability	V_CEW = 300 V @ I_CWoff = 67 A - eliminates need for external RC snubbers in DC/AC inverters up to 3 kW.
UL-compliant full insulation	2500 V RMS isolation - permits direct mounting on grounded heatsinks without additional insulating hardware or safety spacing.
Accidental overload protection	Specified reverse- and forward-biased SOAs - provides documented safe limits for transient overloads in UPS and generator interfaces.

Applications

Motor Control

Uninterruptible Power Supply (UPS)

Use Scenario: Three-phase inverter stage driving 5–10 kW induction motors in HVAC and industrial pumps.

IC Role / Device Role / Timing Role: High-current Darlington switch with integrated diode providing main power path and freewheeling path during PWM dead-time.

Use Value: 0.83 °C/W R_thj-case and 1.25 V V_CE(sat) reduce thermal stress and conduction loss, extending system MTBF under continuous duty.

Use Scenario: Bidirectional DC link switching in online double-conversion UPS systems with battery backup.

IC Role / Device Role / Timing Role: Main inverter switch handling 67 A peak load current and clamping flyback energy during transfer switching.

Use Value: Snubberless 300 V V_CEW rating and 2500 V isolation enable simplified, compact, and UL-certified power stage layout.

DC/DC Converters

DC/AC Inverters

Use Scenario: High-power isolated DC/DC stage in telecom rectifiers or EV charging infrastructure.

IC Role / Device Role / Timing Role: Primary-side switching device in phase-shifted full-bridge topology, managing 400 V bus and 67 A primary current.

Use Value: Low parasitic inductance and 220 A/µs di/dt capability ensure clean turn-on waveforms and reduced EMI in high-frequency (>20 kHz) designs.

Use Scenario: Grid-tied solar inverter output stage converting 400 V DC to 230 V AC with reactive power support.

IC Role / Device Role / Timing Role: Hard-switched inverter leg switch with integrated diode conducting reactive current during zero-crossing intervals.

Use Value: 1.15 V diode V_F and 12 A IRM minimize conduction and recovery losses, improving inverter efficiency above 96%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current Darlington power module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGD3HF60D	IGBT-based (not Darlington), 600 V/3 A, TO-247 package; lower current, higher V_CE(sat) (2.2 V), no integrated diode.	Requires external fast diode; suited for lower-power, higher-voltage SMPS rather than 67 A motor drives.	Select only if voltage rating >400 V is mandatory and current demand <10 A.
IXGH60N60B2	600 V/60 A IGBT in TO-247; no integrated diode; R_thj-case = 0.45 °C/W but requires anti-parallel diode and gate driver optimization.	Higher switching speed but increased design complexity; not drop-in for ESM2030DV's insulated ISOTOP footprint.	Prefer for high-frequency (>50 kHz) inverters where switching loss dominates, not for ruggedized 1–20 kHz industrial drives.

Compared with STGD3HF60D and IXGH60N60B2, ESM2030DV offers unique integration of Darlington gain, ultrafast diode, and UL-rated insulation in one package-enabling simpler, more robust, and thermally efficient designs for high-current, medium-frequency industrial switching.

Availability

ESM2030DV is available at Aetrix Electronics and suitable for motor control, uninterruptible power supply (UPS), and DC/DC converter applications requiring stable component supply, long-lifecycle assurance, and legacy industrial replacement support.

Supply support for ESM2030DV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for automotive, industrial, and consumer markets.

The ESM2030DV belongs to ST's legacy high-power bipolar module family, engineered specifically for ruggedized industrial switching applications demanding high current, thermal reliability, and intrinsic safety via full electrical isolation.

FAQ

What is the maximum recommended heatsink temperature for continuous operation?

The ESM2030DV has a maximum junction temperature of 150 °C and a junction-to-case thermal resistance of 0.83 °C/W. With 150 W total dissipation, the case temperature must remain ≤ 25 °C for full rating. Using R_thc-h = 0.05 °C/W, the heatsink must be held at ≤ 23.75 °C ambient to sustain 150 W continuously - thus forced-air or liquid cooling is required for full-power operation.

Does the integrated diode share the same thermal path as the transistor?

Yes - the diode and transistor share the same die substrate and thermal path to the case, with separate R_thj-case values specified: 0.83 °C/W for the transistor and 1.2 °C/W for the diode. This means the diode contributes additional self-heating under freewheeling duty, requiring combined thermal modeling using both values and respective power dissipation terms.

Can ESM2030DV be used in parallel configurations?

No - the ESM2030DV is not characterized or recommended for paralleling. Its Darlington structure exhibits positive thermal feedback and non-uniform current sharing under mismatched thermal or drive conditions. STMicroelectronics specifies single-device use only; parallel operation would require external current-balancing resistors and individual gate/base drive, voiding SOA guarantees.

Is there a recommended gate/base drive circuit for optimal switching performance?

ESM2030DV uses base drive, not gate drive. ST recommends a low-impedance source capable of delivering 0.4 A DC (1.6 A peak) with fast rise/fall times (<100 ns). A dedicated Darlington driver IC (e.g., UCC3932) or discrete push-pull stage with 0.6 Ω base resistor (R_BB) is specified in the datasheet test circuit to achieve t_s = 2 µs and minimize cross-conduction risk in bridge configurations.

ESM2030DV Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: ISOTOP

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN - Darlington

Current - Collector (Ic) (Max):: 67 A

Voltage - Collector Emitter Breakdown (Max):: 300 V

Vce Saturation (Max) @ Ib, Ic:: 1.5V @ 1.6A, 56A

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: 300 @ 56A, 5V

Power - Max:: 150 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: ISOTOP®

ESM2030DV FAQ

1.How can I place an order for ESM2030DV through Aetrix?

Please submit a Request for Quotation (RFQ) for ESM2030DV on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ESM2030DV reliable?

The price and inventory of ESM2030DV are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESM2030DV is usually 5 days.

3.What payment methods are accepted for ESM2030DV?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESM2030DV transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ESM2030DV?

ESM2030DV orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ESM2030DV order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ESM2030DV?

For technical support, including ESM2030DV datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESM2030DV requirements.

6.How does Aetrix verify that ESM2030DV is sourced from the original manufacturer or authorized distributors?

All ESM2030DV products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESM2030DV meets industry standards.

7.What is the process for return or replacement of ESM2030DV?

All ESM2030DV units undergo pre-shipment inspection (PSI). If there is an issue with ESM2030DV, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ESM2030DV part is unused and in its original packaging.

Return procedure for ESM2030DV:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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