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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

STMicroelectronics ESM3045DV

Name: ESM3045DV
Brand: STMicroelectronics
SKU: ESM3045DV
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ESM3045DV

Manufacturer:: STMicroelectronics

Category:: Single Bipolar Transistors

Package:: ISOTOP

Datasheet:: ESM3045DV.pdf

Description:: TRANS NPN DARL 450V 24A ISOTOP

Quantity:: RFQ Add To RFQ list

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Inventory:3,240

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Product details

Overview

ESM3045DV from STMicroelectronics is an NPN Darlington power bipolar module with integrated ultrafast freewheeling diode, rated for 450 V V_CEO(sus), 24 A continuous collector current, and 125 W total dissipation at T_c = 25 °C; designed for high-current industrial switching in motor control, SMPS, and welding equipment.

For engineers reviewing the ESM3045DV datasheet, ESM3045DV pinout, ESM3045DV application, or ESM3045DV equivalent, key selection criteria include its 1.2–2.0 V V_CE(sat) range at 15–20 A, 150 °C max junction temperature, 2500 V_RMS insulation withstand voltage, low 1.0 °C/W R_thj-case (transistor), and specified accidental overload capability per IEC/UL standards.

Technical Context

This module integrates a high-gain Darlington transistor (h_FE ≥ 120 at I_C = 20 A) and a co-packaged ultrafast recovery diode (t_f ≤ 0.4 µs, I_RM ≤ 14 A), sharing a fully insulated ISOTOP package with UL-compliant 2500 V_RMS isolation between terminals and heatsink.

It supports snubberless operation up to 450 V (V_CEW) under inductive turn-off (L = 0.1 mH, I_CWoff = 24 A), with controlled switching dynamics: t_s ≤ 4 µs, t_f ≤ 0.4 µs, and di_C/dt ≤ 160 A/µs at T_j = 100 °C - enabling robust performance in hard-switched DC/AC converters and UPS systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO(sus)	450 V - Sustaining voltage under inductive load without snubber, enabling simplified topology in DC/DC and welding inverters
I_C (continuous)	24 A - Continuous collector current rating at T_c = 25 °C, defining thermal design baseline for heatsink sizing
V_CE(sat)	1.2–2.0 V - Saturation voltage across 15–20 A range, directly determining conduction loss (P_cond ≈ I_C × V_CE(sat))
R_thj-case (transistor)	1.0 °C/W - Junction-to-case thermal resistance, critical for calculating ΔT_j-c under steady-state power dissipation
V_F (diode)	1.7–2.0 V at I_F = 20 A - Forward voltage of integrated freewheeling diode, impacting reverse recovery loss and efficiency
Visol	2500 V_RMS - Isolation withstand voltage from all four terminals to external heatsink, satisfying UL 1557 creepage/clearance requirements
t_f (diode)	≤ 0.4 µs - Diode fall time, limiting reverse recovery charge (Q_rr) and associated switching loss in high-frequency converters

Pinout & Package

The ESM3045DV uses the ISOTOP package - a fully insulated, stud-mount power module with four terminals: Collector (C), Emitter (E), Base (B), and Diode Cathode (K). The package features metal baseplate isolation, UL-compliant creepage, and low parasitic inductance for high-di/dt stability.

Pin/Terminal	Circuit Role	Design Meaning
C (Collector)	Main high-side switching node	Connected to DC bus or transformer primary; carries full load current during conduction
E (Emitter)	Transistor emitter reference	Serves as common return for transistor and diode anode; requires low-inductance PCB layout
B (Base)	Current-driven control input	Requires 1.2 A drive for 20 A I_C; base resistor must limit I_B to avoid overdrive or saturation delay
K (Cathode)	Integrated diode cathode	Connects to positive rail in freewheeling path; enables bidirectional current handling in bridge legs

Key Features

Feature	Design Value
Ultrafast freewheeling diode	t_f ≤ 0.4 µs and I_RM ≤ 14 A enable efficient energy recirculation in <100 kHz DC/AC inverters
Specified accidental overload areas	Defined SOA curves (forward/reverse biased) allow safe single-pulse operation beyond continuous ratings in motor stall or short-circuit events
Low R_thj-case (1.0 °C/W)	Enables higher power density by reducing thermal bottleneck between die and heatsink in compact industrial enclosures
Full insulation (2500 V_RMS)	Eliminates need for insulating washers or pads, simplifying mechanical mounting and improving thermal contact reliability
Snubberless V_CEW = 450 V	Reduces component count and board space in SMPS and UPS designs by removing external RC snubbers on main switch

Applications

Motor Control

SMPS & UPS

Use Scenario: Three-phase inverter driving induction motors in HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: High-current Darlington switch in upper-leg position, commutating 24 A peak phase current at 4–16 kHz PWM.

Use Value: Low V_CE(sat) minimizes conduction loss at partial load; integrated diode handles regenerative braking current without external flyback components.

Use Scenario: Primary-side switch in 3 kW offline forward converter for telecom UPS systems.

IC Role / Device Role / Timing Role: Main power switch operating in hard-switched mode with 50–100 kHz switching frequency and 450 V bus.

Use Value: Snubberless V_CEW rating eliminates snubber losses; 2500 V_RMS isolation ensures safety compliance in double-insulated AC-DC architectures.

DC/DC Converters

Welding Equipment

Use Scenario: Isolated bidirectional DC/DC stage in battery energy storage systems (48–800 V range).

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge topology, conducting 20 A continuously with reverse recovery managed by integrated diode.

Use Value: Matched transistor/diode thermal coupling prevents hot-spotting; low R_thj-case sustains >92% efficiency at 5 kW output.

Use Scenario: Inverter output stage in IGBT-based arc welding machines with pulsed current delivery (100–500 A peak).

IC Role / Device Role / Timing Role: Final power stage switch handling repetitive 10 ms overload pulses at 24 A average, with accidental short-circuit tolerance.

Use Value: Specified accidental overload SOA allows reliable operation during electrode stick events without derating or forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current Darlington power module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGH24N60B3	600 V, 24 A IGBT with built-in FRD; lower V_CE(sat) (1.8 V) but no Darlington gain - requires gate driver with >15 V supply	Higher switching speed (t_f < 0.1 µs) suits >100 kHz topologies; lacks accidental overload SOA definition	Prefer for high-frequency SMPS where gate drive capability exists; avoid in base-driven legacy motor controls
ON Semiconductor MJD122G	40 V, 8 A discrete Darlington; no integrated diode, no isolation, R_thj-case = 3.0 °C/W	Limited to low-voltage (<60 V) DC motor drives; requires external diode and insulating hardware	Only suitable for cost-sensitive, low-power replacements where voltage/current ratings align and isolation is handled externally

Compared with IXGH24N60B3 and MJD122G, the ESM3045DV uniquely combines Darlington base-drive compatibility, UL-rated insulation, defined overload SOA, and integrated diode - making it irreplaceable in legacy industrial systems requiring direct drop-in replacement with safety-certified mounting.

Availability

ESM3045DV is available at Aetrix Electronics and suitable for motor control, SMPS & UPS, and welding equipment requiring stable component supply amid long-lifecycle industrial programs.

Supply support for ESM3045DV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

The ESM3045DV belongs to ST's legacy high-power bipolar module family, engineered specifically for ruggedized industrial switching where base-drive simplicity, thermal robustness, and safety-certified insulation are mandatory.

FAQ

Is the ESM3045DV still in active production?

No - STMicroelectronics has marked ESM3045DV as obsolete (per September 2003 datasheet footer). However, Aetrix Electronics maintains legacy inventory with full traceability and offers extended lifecycle support including cross-reference engineering and obsolescence mitigation planning for industrial customers.

What is the recommended heatsink interface material for ESM3045DV?

ST specifies conductive thermal grease (e.g., Dow Corning TC-5022 or equivalent) with R_thc-h ≤ 0.05 °C/W. Silicone-free pastes are preferred to avoid outgassing in sealed enclosures. Mechanical clamping force must be 25–35 N·cm per mounting screw to ensure uniform baseplate contact without cracking the ceramic insulation layer.

Can the integrated diode be used independently of the transistor?

Yes - the diode anode is internally tied to the transistor emitter (E), and cathode (K) is brought out separately. This allows independent use as a freewheeling diode in half-bridge configurations or as a standalone clamp diode when the transistor is inactive, provided voltage and current ratings (V_R = 450 V, I_F(AV) = 20 A) are respected.

Does ESM3045DV require a negative base-emitter voltage during turn-off?

Yes - the datasheet specifies V_BE = –5 V during switching tests (e.g., t_s, t_f). Applying –5 V accelerates minority-carrier extraction, reducing storage time to ≤4 µs. A base-emitter clamp circuit (e.g., Zener + resistor) is recommended to ensure reliable turn-off under high di/dt conditions in inductive loads.

ESM3045DV Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: ISOTOP

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN - Darlington

Current - Collector (Ic) (Max):: 24 A

Voltage - Collector Emitter Breakdown (Max):: 450 V

Vce Saturation (Max) @ Ib, Ic:: 1.4V @ 1.2A, 20A

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: 120 @ 20A, 5V

Power - Max:: 125 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: ISOTOP®

ESM3045DV FAQ

1.How can I place an order for ESM3045DV through Aetrix?

Please submit a Request for Quotation (RFQ) for ESM3045DV on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ESM3045DV reliable?

The price and inventory of ESM3045DV are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESM3045DV is usually 5 days.

3.What payment methods are accepted for ESM3045DV?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESM3045DV transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ESM3045DV?

ESM3045DV orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ESM3045DV order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ESM3045DV?

For technical support, including ESM3045DV datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESM3045DV requirements.

6.How does Aetrix verify that ESM3045DV is sourced from the original manufacturer or authorized distributors?

All ESM3045DV products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESM3045DV meets industry standards.

7.What is the process for return or replacement of ESM3045DV?

All ESM3045DV units undergo pre-shipment inspection (PSI). If there is an issue with ESM3045DV, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ESM3045DV part is unused and in its original packaging.

Return procedure for ESM3045DV:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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