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STMicroelectronics ESM5045DV
- Part No.:
- ESM5045DV
- Manufacturer:
- STMicroelectronics
- Category:
- Single Bipolar Transistors
- Package:
- ISOTOP
- Datasheet:
-
ESM5045DV.pdf
- Description:
- TRANS NPN DARL 450V 60A ISOTOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,692
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Product details
Overview
ESM5045DV from STMicroelectronics is an NPN Darlington power bipolar module with integrated ultrafast freewheeling diode, rated for 60 A continuous collector current, 450 V collector-emitter sustaining voltage, and 175 W total dissipation at Tc = 25 °C; used in industrial motor control, welding equipment, and high-current SMPS/UPS inverters.
For engineers reviewing the ESM5045DV datasheet, ESM5045DV pinout, ESM5045DV application, or ESM5045DV equivalent, key selection criteria include its 0.71 °C/W transistor junction-to-case thermal resistance, 2.3 V base-emitter saturation voltage at 50 A, 300–400 A/µs di/dt capability, and UL-compliant fully insulated ISOTOP package enabling direct heatsink mounting without isolation hardware.
Technical Context
This module integrates a high-gain Darlington transistor (hFE ≥ 150 at IC = 50 A) and a fast-recovery diode in a single fully insulated ISOTOP package. Its switching performance is characterized by 3.2 µs storage time and 0.25 µs fall time under inductive load conditions (L = 0.07 mH, VCC = 50 V).
The device operates within a junction temperature range of –55 °C to 150 °C and supports snubberless operation up to 450 V (ICWoff = 60 A), enabled by specified accidental overload areas and reverse-biased safe operating area (SOA) curves validated per ST's 2003 characterization.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO(sus) | 450 V - Sustaining voltage under inductive turn-off without snubber, enabling simplified gate drive design in 400 V bus systems |
| IC | 60 A - Continuous collector current rating at Tc = 25 °C, defining maximum steady-state conduction capacity |
| Rthj-case (transistor) | 0.71 °C/W - Junction-to-case thermal resistance, directly determining heatsink sizing for 150 °C max junction operation |
| hFE | ≥150 - DC current gain at IC = 50 A, VCE = 5 V, ensuring low base drive power requirement (IB ≈ 0.33 A nominal) |
| VCE(sat) | 1.4 V - Saturation voltage at IC = 35 A, IB = 0.7 A, Tj = 100 °C, setting conduction loss baseline (Pcond ≈ 49 W) |
| diC/dt | 300–400 A/µs - Rate of rise of on-state collector current, critical for minimizing switching losses in high-frequency inverters |
| Visol | 2500 V RMS - Insulation withstand voltage from all four terminals to external heatsink, meeting UL 1557 basic insulation requirements |
Pinout & Package
The ESM5045DV uses the ISOTOP package: a 4-terminal, fully insulated, rectangular metal-base power module with standardized mechanical dimensions (38.2 × 25.5 × 12.2 mm) and UL-recognized creepage/clearance spacing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main power output terminal of Darlington transistor | Carries full load current; electrically isolated from heatsink; requires low-inductance connection to DC bus |
| Emitter (E) | Transistor emitter and diode cathode common node | Reference point for base drive and current sensing; shared with diode cathode for half-bridge freewheeling path |
| Base (B) | Control input for Darlington transistor | Drives both driver and output transistors; requires 2.8 A peak for 50 A IC, with 2.3 V VBE(sat) at Tj = 100 °C |
| Anode (A) | Freewheeling diode anode | Connects to negative DC rail or inductive load return; enables energy recirculation during turn-off |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast freewheeling diode | IRM = 32–38 A reverse recovery current at diF/dt = –300 A/µs, minimizing voltage overshoot in inductive switching |
| Low Rthj-case (transistor) | 0.71 °C/W enables 150 °C junction operation with modest heatsink thermal resistance (e.g., ≤ 0.5 °C/W) |
| Snubberless operation capability | Rated for VCEW = 450 V at ICWoff = 60 A, eliminating external RC snubbers in 400 V-class converters |
| UL-compliant full insulation | 2500 V RMS isolation between all terminals and heatsink meets UL 1557, removing need for insulating pads or sleeves |
| Low internal parasitic inductance | Optimized internal bonding and layout reduces switching loop inductance, suppressing VCE spikes during di/dt events |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Three-phase inverter stage in 10–20 kW AC motor drives for pumps and compressors. IC Role / Device Role / Timing Role: Main switching element in each leg; Darlington configuration provides high current gain for gate driver simplification. Use Value: 60 A continuous rating and 450 V VCEO(sus) support 400 V DC bus operation with margin; low VCE(sat) reduces conduction loss at partial load. | Use Scenario: Output inverter stage in online double-conversion UPS systems delivering clean 230 VAC. IC Role / Device Role / Timing Role: High-current switch in H-bridge topology; integrated diode handles reactive load current during PWM dead-time. Use Value: Ultrafast diode (32–38 A IRM) minimizes reverse recovery loss and EMI; 0.71 °C/W Rthj-case maintains thermal stability under 100% load. |
| Resistance Welding Controls | High-Current SMPS Rectification |
Use Scenario: Primary-side switching in capacitor-discharge weld controllers requiring precise 10–100 ms pulse delivery. IC Role / Device Role / Timing Role: High-pulse-current switch triggered by timed base drive; sustains 90 A ICM for 10 ms pulses. Use Value: Specified accidental overload areas allow reliable short-duration overcurrent handling without derating; low storage time (3.2 µs) ensures accurate pulse edge definition. | Use Scenario: Secondary-side synchronous rectifier replacement in 5–10 kW telecom rectifiers. IC Role / Device Role / Timing Role: Freewheeling diode + transistor pair in center-tapped or full-wave configurations; diode conducts during transformer reset phase. Use Value: VF = 1.5–1.8 V at 50 A reduces forward loss vs. standard silicon diodes; integrated structure eliminates interconnect inductance between switch and diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current Darlington power module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGH60N60B3 | 600 V, 60 A IGBT with co-packaged FRD; higher VCE(sat) (~2.5 V), no Darlington gain | Requires higher gate drive current; better for >20 kHz switching but less suitable for low-frequency, high-gain drive | Prefer when higher switching frequency or lower di/dt sensitivity is required |
| ON Semiconductor MJD127G | Single NPN Darlington transistor (100 V, 10 A); discrete, non-insulated, no integrated diode | Limited to <1 kW applications; requires external diode and isolation hardware | Only viable for low-power prototyping where ISOTOP footprint and insulation are not needed |
Compared with IXGH60N60B3 and MJD127G, the ESM5045DV uniquely combines Darlington gain, full insulation, integrated diode, and snubberless 450 V operation-making it irreplaceable for cost-sensitive, medium-frequency (<5 kHz), high-current industrial inverters requiring minimal gate drive complexity.
Availability
ESM5045DV is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), and resistance welding equipment requiring stable component supply across multi-year production cycles.
Supply support for ESM5045DV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
The ESM5045DV belongs to ST's legacy high-power bipolar module family, engineered specifically for ruggedized industrial switching applications demanding high current density, thermal robustness, and system-level insulation integrity.
FAQ
What is the maximum allowable case temperature for continuous operation?
The ESM5045DV is rated for continuous operation with case temperature (Tc) up to 25 °C for full 175 W dissipation. Derating is required above this: at Tc = 100 °C, maximum dissipation drops to approximately 70 W based on the 0.71 °C/W Rthj-case and 150 °C Tj(max). Thermal design must ensure Tc remains within limits defined by the derating curve in the datasheet.
Does the integrated diode share the same thermal path as the transistor?
No-the datasheet specifies separate thermal resistances: Rthj-case(transistor) = 0.71 °C/W and Rthj-case(diode) = 1.2 °C/W. This indicates distinct die placement and thermal coupling; the diode junction runs hotter than the transistor junction under equal power dissipation, requiring independent thermal modeling in high-duty-cycle freewheeling applications.
Can ESM5045DV be used in parallel configurations?
Parallel operation is not recommended due to inherent current-sharing challenges in Darlington devices caused by hFE variation and VBE(sat) mismatch across units. The datasheet does not specify matching tolerances or provide paralleling guidelines. For higher current needs, use a single higher-rated module or redesign using IGBTs with active current balancing.
Is there a recommended gate/base drive circuit for this module?
ST recommends a base drive capable of delivering 2.8 A peak current (for 50 A IC) with fast rise/fall times (<100 ns) and clamped negative voltage (–5 V) during turn-off to minimize storage time. A 0.6 Ω base resistor and –5 V VBB supply are used in the reference test circuit; external base-emitter clamp diodes improve reliability under inductive switching stress.
ESM5045DV Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- ISOTOP
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Darlington
- Current - Collector (Ic) (Max):
- 60 A
- Voltage - Collector Emitter Breakdown (Max):
- 450 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.4V @ 2.8A, 50A
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 50A, 5V
- Power - Max:
- 175 W
- Frequency - Transition:
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- ISOTOP®
ESM5045DV FAQ
1.How can I place an order for ESM5045DV through Aetrix?
Please submit a Request for Quotation (RFQ) for ESM5045DV on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ESM5045DV reliable?
The price and inventory of ESM5045DV are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ESM5045DV is usually 5 days.
3.What payment methods are accepted for ESM5045DV?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ESM5045DV transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ESM5045DV?
ESM5045DV orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ESM5045DV order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ESM5045DV?
For technical support, including ESM5045DV datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ESM5045DV requirements.
6.How does Aetrix verify that ESM5045DV is sourced from the original manufacturer or authorized distributors?
All ESM5045DV products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ESM5045DV meets industry standards.
7.What is the process for return or replacement of ESM5045DV?
All ESM5045DV units undergo pre-shipment inspection (PSI). If there is an issue with ESM5045DV, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ESM5045DV part is unused and in its original packaging.
Return procedure for ESM5045DV:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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