Infineon Technologies ETZ1100N16P70HPSA1

Overview

ETZ1100N16P70HPSA1 from Infineon Technologies is a pressure-contact thyristor module designed for phase-controlled AC power regulation in industrial medium-power applications. It features 1600 V repetitive peak off-state voltage (VDRM/VRRM), 1051 A average on-state current at TC = 85°C, 33.6 kA non-repetitive surge current (ITSM), and an electrically insulated 70 mm base plate - enabling use in soft starters and static switches where high reliability and thermal robustness are critical.

For engineers reviewing the ETZ1100N16P70HPSA1 datasheet, ETZ1100N16P70HPSA1 pinout, ETZ1100N16P70HPSA1 application, or ETZ1100N16P70HPSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.0388 K/W), gate trigger current (≤250 mA), critical dv/dt rating (1000 V/µs), and its pressure-contact construction for long-term cycling stability in drive rectifiers and crowbar circuits.

Technical Context

This thyristor module implements a dual-arm, phase-control topology with symmetrical forward/reverse blocking capability. Its pressure-contact die attachment ensures low parasitic inductance and stable RthJC across thermal cycles, while the AlN-based internal insulation supports 3.6 kV isolation (1 sec test) and Class I safety compliance.

The device operates with a threshold voltage (VT0) of 0.8 V and slope resistance (rT) of 0.15 mΩ, delivering predictable conduction loss behavior up to 3000 A peak. Gate control is optimized for 1 A/µs diG/dt sensitivity and ≤4 µs turn-on delay under standardized triggering conditions.

Key Specifications

Pinout & Package

ETZ1100N16P70HPSA1 is housed in an industrial-standard pressure-contact module package with electrically insulated 70 mm base plate, M1 mounting screws (6 Nm), and M2 terminal bolts (18 Nm). The module contains two anti-parallel thyristor arms sharing common cathode/anode terminals and isolated gate connections.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with M5701L1600 and T1100N16TOF, ETZ1100N16P70HPSA1 uniquely combines 70 mm insulated base plate, 33.6 kA ITSM, and 0.0388 K/W RthJC - making it the only option qualified for UL-listed UPS bypass and IEC 61800-5-1-compliant drive soft starters requiring reinforced insulation and high-cycle reliability.

Availability

ETZ1100N16P70HPSA1 is available at Aetrix Electronics and suitable for soft starters, drive rectifiers, crowbar protection circuits, and static switches requiring stable component supply, long-lifecycle support, and certified isolation integrity.

Supply support for ETZ1100N16P70HPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This part belongs to Infineon's eTZ Advanced Medium Power Thyristor Module product line, engineered specifically for high-reliability, medium-power AC power control in industrial drives, UPS systems, and grid-tied energy infrastructure.

FAQ

What is the maximum allowable junction temperature for ETZ1100N16P70HPSA1?

The maximum junction temperature (Tvj max) is 135°C, as specified in the official Infineon technical information document revision 3.2. This rating applies under all operating conditions including repetitive and non-repetitive surge events. Thermal design must ensure that transient ZthJC curves - not just DC RthJC - remain within limits during pulsed load profiles.

Does ETZ1100N16P70HPSA1 require forced cooling?

No, forced cooling is not mandatory but strongly recommended for continuous operation above 600 A ITAV. Natural convection is insufficient due to 1051 A ITAVM rating; a heatsink with RthCH ≤ 0.02 K/W and active airflow is required to maintain TC ≤ 85°C. The module's 0.0388 K/W RthJC assumes optimal mounting torque (6 Nm for M1, 18 Nm for M2) and thermal interface material.

Can ETZ1100N16P70HPSA1 be used in parallel configurations?

Parallel operation is not recommended. The module lacks integrated current-sharing features such as matched dynamic parameters or integrated balancing resistors. Infineon's documentation does not specify parallel derating curves or gate synchronization requirements, and pressure-contact construction introduces variability in dynamic on-state voltage that impedes stable current division.

What gate drive voltage is required to reliably trigger ETZ1100N16P70HPSA1?

A minimum gate trigger voltage of 2 V (VGT max) at 25°C and 12 V anode-cathode voltage is required, with corresponding gate current ≤250 mA (IGT max). Reliable turn-on across temperature (-40°C to +135°C) demands ≥3 V and ≥300 mA pulses with diG/dt ≥1 A/µs, as confirmed by the gate characteristic curve (Figure 6) in the technical information sheet.