Infineon Technologies ETZ950N22P70HPSA1

Overview

ETZ950N22P70HPSA1 from Infineon Technologies is a pressure-contact thyristor module for phase-controlled AC power regulation, featuring V_DRM/V_RRM = 2200 V, I_TAVM = 923 A (T_C = 85°C), R_thJC = 0.0398 K/W, and electrically insulated 70 mm base plate. It delivers high-reliability switching in industrial rectifier, soft starter, and crowbar applications.

For engineers reviewing the ETZ950N22P70HPSA1 datasheet, ETZ950N22P70HPSA1 pinout, ETZ950N22P70HPSA1 application, or ETZ950N22P70HPSA1 equivalent, key selection criteria include repetitive peak blocking voltage, RMS on-state current rating, junction-to-case thermal resistance, gate trigger sensitivity, and transient thermal impedance behavior under sinusoidal conduction angles.

Technical Context

This double-sided, press-pack thyristor module implements phase control via gate-triggered turn-on with critical (di_T/dt)_cr = 200 A/µs and (dv_D/dt)_cr = 1000 V/µs, enabling robust commutation in line-frequency AC systems. Its AMPT (Advanced Medium Power Technology) construction uses silicon pellets with AlN isolation and pressure-contact metallization to sustain I_TSM = 30 kA surge current at 10 ms.

The module operates across T_j = –40°C to +135°C with v_T(max) = 1.75 V at 3000 A and V_(TO) = 0.82 V, supporting low-loss conduction in high-current rectifier bridges (B2/B6) and static switches where thermal management relies on case-to-heatsink resistance (R_thCH = 0.02 K/W).

Key Specifications

Pinout & Package

ETZ950N22P70HPSA1 is housed in an industrial-standard press-pack module with electrically insulated 70 mm base plate, DIN 46244 A control terminals (2.8 × 0.8 mm), and M2 (18 Nm) main terminal torque specification. The device contains two anti-parallel thyristor arms sharing common cathode/anode baseplate connections.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase control thyristor module applications.

Compared with M57222U and STT950N22, ETZ950N22P70HPSA1 provides optimal balance of insulated mounting, 923 A rating, and 0.0398 K/W thermal resistance in a single dual-arm package-reducing system-level component count and thermal interface complexity in industrial power controllers.

Availability

ETZ950N22P70HPSA1 is available at Aetrix Electronics and suitable for soft starters, UPS rectifiers, and static switch applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for ETZ950N22P70HPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's eTZ series of press-pack thyristor modules, engineered specifically for high-reliability, medium-power industrial AC power control-including motor drives, energy storage systems, and grid-tied converters-where thermal stability and electrical isolation are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The maximum allowable case temperature (T_C) is +135°C, validated per IEC 61140 Class 1 insulation and confirmed by thermal derating curves showing I_TAVM = 923 A at T_C = 85°C and linear reduction to zero at T_C = 135°C under DC conduction. Operation above this temperature risks irreversible junction damage and insulation failure.

Does ETZ950N22P70HPSA1 require forced air cooling?

No-forced air cooling is not mandatory. With R_thCH = 0.02 K/W and R_thCA = 0.15 K/W typical, natural convection on a properly sized heatsink suffices for ≤600 A RMS loads. Forced air reduces R_thCA to ~0.08 K/W, enabling full 923 A rating in space-constrained enclosures per the published P_TAV vs. I_TAV curves.

Can this module be used in a single-phase full-wave bridge?

Yes-ETZ950N22P70HPSA1 contains two anti-parallel thyristor arms, making it directly suitable for single-phase full-wave (B2) rectification or AC voltage control. Each arm handles one polarity; gate signals must be isolated and timed to avoid shoot-through, with minimum 4 µs delay between complementary triggers per the t_gd specification.

What gate drive voltage and current are required for reliable triggering?

A gate pulse of ≤2 V and ≥250 mA (at 12 V anode-cathode voltage) ensures turn-on across –40°C to +135°C junction temperatures. Drive circuits must deliver ≥20 W peak power for ≤10 ms pulses (per P_GM curve), with di_G/dt ≥1 A/µs to meet the 4 µs maximum gate delay (t_gd) requirement under worst-case conditions.