Analog Devices Inc. EV1HMC1114LP5D

Overview

EV1HMC1114LP5D from Analog Devices is an evaluation printed circuit board (PCB) designed to characterize and validate the HMC1114LP5DE GaN power amplifier - a 10 W, 2.7–3.8 GHz broadband RF amplifier in a 32-lead 5 mm × 5 mm LFCSP_CAV package. It supports pulsed/CW operation with 41.5 dBm saturated output power, 25.5 dB power gain, and 54% PAE at 28 V. The board enables rapid prototyping for wireless infrastructure and radar transmitter stages.

For engineers reviewing the EV1HMC1114LP5D datasheet, EV1HMC1114LP5D application circuit, EV1HMC1114LP5D layout, or EV1HMC1114LP5D bill of materials, this evaluation board provides fully populated, RF-optimized implementation of the HMC1114LP5DE amplifier - including SMA input/output connectors, dual 28 V drain bias paths (VDD1/VDD2), gate control voltage terminals (VGG1/VGG2), and verified 50 Ω signal routing on Rogers 4350 substrate.

Technical Context

The EV1HMC1114LP5D implements the HMC1114LP5DE amplifier in a production-ready evaluation configuration: dc-coupled RFIN via 1000 pF blocking capacitor, ac-coupled RFOUT using integrated on-chip capacitors, and dual-stage biasing with external 1 μF/10 μF bypass networks on VGG1/VGG2 and 100 pF/1 μF/10 μF networks on VDD1/VDD2. All 24 ground pins and the exposed paddle are directly connected to a solid RF ground plane via multiple vias.

It uses Rogers 4350 or Arlon 25FR PCB material to maintain controlled 50 Ω impedance across the 2.7–3.8 GHz band, supports ±0.5 dB gain flatness, and enables direct measurement of key metrics - including S-parameters, P1dB, PSAT, IP3, and PAE - without external matching components due to the HMC1114's internally matched 50 Ω ports.

Key Specifications

Availability

EV1HMC1114LP5D is available at Aetrix Electronics and suitable for wireless infrastructure base stations, radar transceiver development, and test & measurement equipment requiring stable component supply, traceable evaluation hardware, and fast-turn RF validation capability.

Supply support for EV1HMC1114LP5D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF ICs, serving precision instrumentation, communications, and defense markets since 1965.

The EV1HMC1114LP5D belongs to Analog Devices' RF/Microwave Evaluation Platform family - purpose-built to accelerate design-in of GaN and SiGe power amplifiers through rigorously characterized, application-ready reference layouts and documented biasing sequences.

FAQ

What is the primary function of the EV1HMC1114LP5D?

The EV1HMC1114LP5D is an evaluation PCB designed exclusively for the HMC1114LP5DE GaN power amplifier. It provides a fully assembled, RF-optimized platform to measure gain, output power, efficiency, linearity, and thermal behavior across 2.7–3.8 GHz. The EV1HMC1114LP5D includes SMA connectors, proper grounding, and verified bias networks - enabling immediate lab validation without custom layout effort.

Does the EV1HMC1114LP5D require external matching components?

No. The EV1HMC1114LP5D leverages the HMC1114LP5DE's internally matched 50 Ω input and output ports. Its RFIN is dc-coupled with a 1000 pF blocking capacitor, and RFOUT uses on-chip ac coupling - eliminating need for external matching. The board maintains 50 Ω impedance via Rogers 4350 substrate and controlled trace geometry, so the EV1HMC1114LP5D delivers full datasheet performance out-of-the-box.

What bias voltages and sequencing are required for the EV1HMC1114LP5D?

The EV1HMC1114LP5D supports VDD1/VDD2 = 28 V and VGG1/VGG2 adjustable from −8 V to 0 V. Per the HMC1114 datasheet, the recommended power-up sequence is: (1) connect all grounds, (2) set VGG1/VGG2 to −8 V, (3) apply 28 V to VDD1/VDD2, (4) ramp VGG1/VGG2 to achieve IDQ = 150 mA, then (5) apply RF signal. This sequence prevents latch-up and ensures stable operation of the EV1HMC1114LP5D.

Which RF test equipment interfaces directly with the EV1HMC1114LP5D?

The EV1HMC1114LP5D features standard SMA female connectors (J1 for RFIN, J2 for RFOUT) compatible with vector network analyzers (VNAs), signal generators, spectrum analyzers, and RF power meters. Its 50 Ω impedance and calibrated layout allow direct S-parameter measurement, harmonic analysis, and PAE testing - no adapters or fixtures needed. DC bias is applied via J3 screw terminals, supporting lab-grade power supplies.

Is thermal management addressed on the EV1HMC1114LP5D?

Yes. The EV1HMC1114LP5D routes the HMC1114LP5DE's exposed paddle and all 24 GND pins to a continuous internal ground plane using multiple thermal vias. The Rogers 4350 substrate provides superior thermal conductivity vs. FR-4, and the board layout follows Analog Devices' thermal guidelines - enabling reliable operation at full 10 W output with ambient temperature up to +85°C. Thermal imaging confirms uniform heat distribution across the EV1HMC1114LP5D assembly.