Analog Devices Inc. EV1HMC220BMS8G

Overview

EV1HMC220BMS8G from Analog Devices is an evaluation PCB assembly designed for the HMC220BMS8GE GaAs MMIC fundamental mixer. It supports RF operation from 5 GHz to 12 GHz, IF bandwidth DC–4 GHz, and requires no external matching or DC bias. It enables rapid characterization of upconversion/downconversion performance in microwave radio and satellite communication systems.

For engineers reviewing the EV1HMC220BMS8G datasheet, EV1HMC220BMS8G pinout, EV1HMC220BMS8G application, or EV1HMC220BMS8G equivalent, this board provides validated RF layout, 50 Ω SMA interfaces (J1/J2/J3), exposed-pad thermal grounding, and direct-mount capability for the HMC220BMS8GE die in MINI_SO_EP (RH-8-1) package - critical for evaluating mixer isolation, conversion loss, and spurious behavior under real-world LO drive conditions.

Technical Context

The EV1HMC220BMS8G is a dedicated evaluation platform-not an IC or discrete component-featuring three 2.92 mm SMA connectors (two end-launch, one subminiature) aligned to match the HMC220BMS8GE's RF/LO/IF port locations. Its PCB implements controlled-impedance 50 Ω microstrip traces, solid ground planes, and thermal vias beneath the exposed pad to replicate production-grade RF and thermal performance.

It supports full characterization per the HMC220B datasheet Rev. C: downconversion (RF→IF) and upconversion (IF→RF) modes, LO drive levels from 7 dBm to 13 dBm, and temperature testing from −40°C to +85°C. The board includes no active components-only passive routing, connectors, and mounting features for the DUT (U1 = HMC220BMS8GE).

Key Specifications

Availability

EV1HMC220BMS8G is available at Aetrix Electronics and suitable for microwave radio development, satellite terminal prototyping, and military EW subsystem validation requiring stable component supply and repeatable RF evaluation infrastructure.

Supply support for EV1HMC220BMS8G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF ICs, serving communications, industrial, automotive, and defense markets with precision signal processing solutions.

The EV1HMC220BMS8G belongs to Analog Devices' RF evaluation platform product line, engineered to accelerate design-in of GaAs MMIC mixers by providing factory-characterized, impedance-matched PCB layouts that eliminate RF layout risk during early-stage RF system development.

FAQ

What is the EV1HMC220BMS8G used for?

The EV1HMC220BMS8G is an evaluation PCB assembly specifically built to characterize the HMC220BMS8GE GaAs MMIC mixer. It enables engineers to measure conversion loss, isolation (LO–RF, LO–IF, RF–IF), IP3, noise figure, and spurious performance across 5–12 GHz RF and DC–4 GHz IF bands without custom PCB design. The EV1HMC220BMS8G includes calibrated SMA interfaces and thermal grounding structures aligned to the HMC220BMS8GE's MINI_SO_EP footprint.

Does the EV1HMC220BMS8G include the HMC220BMS8GE IC?

No, the EV1HMC220BMS8G is a bare evaluation PCB assembly only. Per Table 5 of the HMC220B datasheet Rev. C, it is listed as "PCB, EV1HMC220BMS8G" with reference designator "1", and the HMC220BMS8GE device under test (DUT) is a separate component (U1). Users must procure and solder the HMC220BMS8GE IC separately onto the board's designated land pattern.

What connectors are fitted on the EV1HMC220BMS8G?

The EV1HMC220BMS8G features three 2.92 mm SMA connectors: J1 and J2 are subminiature version A (SMA) connectors for RF and LO ports respectively, and J3 is an end-launch SMA connector for the IF port. All are rated for DC–40 GHz operation and maintain 50 Ω impedance continuity to the HMC220BMS8GE bond pads per the datasheet's interface schematics (Figures 3–6).

Can the EV1HMC220BMS8G be used for both upconversion and downconversion testing?

Yes, the EV1HMC220BMS8G supports both upconversion and downconversion modes as defined in the HMC220B datasheet. Its symmetric RF/LO/IF routing and 50 Ω terminations allow flexible signal injection: RF and LO ports accept ac-coupled 50 Ω sources (5–12 GHz), while the IF port accepts dc-coupled signals (DC–4 GHz) - enabling full characterization of lower/upper sideband performance, conversion gain, and spurious output per Figures 7–50.

Is thermal management addressed on the EV1HMC220BMS8G PCB?

Yes, the EV1HMC220BMS8G implements thermal design per HMC220B datasheet requirements: the exposed pad (EPAD) of the HMC220BMS8GE lands directly over a copper area connected via multiple thermal vias to internal and bottom-layer ground planes. This structure replicates the θJC = 180°C/W and θJA = 104.7°C/W thermal resistance values specified for the RH-8-1 package, ensuring accurate junction temperature estimation during high-power LO drive testing.