Analog Devices Inc. EV1HMC349ALP4C

Overview

EV1HMC349ALP4C from Analog Devices is an evaluation board designed to characterize the HMC349ALP4CE GaAs SPDT RF switch, supporting 100 MHz to 4 GHz operation with 1.0 dB typical insertion loss and 62 dB isolation at 2 GHz. It enables rapid prototyping of high-isolation RF path switching in wireless infrastructure and test equipment.

For engineers reviewing the EV1HMC349ALP4C datasheet, EV1HMC349ALP4C pinout, EV1HMC349ALP4C application, or EV1HMC349ALP4C equivalent, this board provides full access to RFC, RF1, and RF2 SMA connectors, on-board 100 pF dc blocking capacitors, and a 4-layer Rogers RO4350/FR-4 hybrid PCB optimized for 50 Ω coplanar waveguide routing and thermal grounding.

Technical Context

The EV1HMC349ALP4C implements a 4-layer PCB with 0.5 oz copper, top-layer Rogers RO4350 (10 mil) for RF integrity, and FR-4 inner/bottom layers for structural stability. RF traces use 13-mil-width coplanar waveguide with 10-mil ground spacing to maintain 50 Ω impedance across the full 100 MHz–4 GHz band.

It integrates three PC-mount SMA connectors (J1: RFC, J2: RF2, J3: RF1), dedicated DC control pins (J4: CTRL, J8: EN, J5: VDD, J6/J7: GND), and plated-through vias densely arranged under the HMC349ALP4CE's exposed pad and RF paths to ensure low-inductance RF and thermal grounding.

Key Specifications

Availability

EV1HMC349ALP4C is available at Aetrix Electronics and suitable for RF switch validation, 5G base station front-end development, and automated test equipment calibration requiring stable component supply and repeatable measurement platforms.

Supply support for EV1HMC349ALP4C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF ICs, serving communications, industrial, automotive, and aerospace markets with precision signal processing solutions.

The EV1HMC349ALP4C belongs to Analog Devices' RF evaluation board portfolio, engineered specifically to accelerate characterization and integration of their GaAs SPDT switches-targeting wireless infrastructure, mobile radio, and high-speed test instrumentation applications.

FAQ

What is the primary function of the EV1HMC349ALP4C evaluation board?

The EV1HMC349ALP4C evaluation board is a dedicated platform for evaluating the HMC349ALP4CE GaAs SPDT RF switch. It provides SMA-connected access to all RF ports (RFC, RF1, RF2), CMOS/TTL-compatible control interfaces (CTRL, EN, VDD, GND), and calibrated 50 Ω transmission lines-enabling accurate S-parameter, linearity, and switching speed measurements across 100 MHz to 4 GHz without custom PCB design. The EV1HMC349ALP4C supports both benchtop validation and system-level integration testing.

Does the EV1HMC349ALP4C include dc blocking capacitors, and where are they placed?

Yes, the EV1HMC349ALP4C includes three 100 pF, 0402-format dc blocking capacitors: C1 on the RFC path, C2 on the RF1 path, and C3 on the RF2 path-all placed immediately adjacent to the HMC349ALP4CE package pins. These capacitors enable dc isolation while maintaining insertion loss below 1.2 dB and return loss above 15 dB up to 4 GHz, as verified on the evaluation board per the HMC349ALP4CE datasheet. The EV1HMC349ALP4C schematic confirms their placement in series with each RF port before the SMA connector.

What PCB materials and stack-up are used in the EV1HMC349ALP4C?

The EV1HMC349ALP4C uses a 4-layer hybrid PCB: top layer is 10 mil Rogers RO4350 for stable high-frequency performance; inner and bottom layers are FR-4 for mechanical rigidity and cost efficiency; total thickness is 62 mil. All RF traces are routed on the top layer using coplanar waveguide geometry (13-mil center conductor, 10-mil ground gap), while inner and bottom layers serve as solid ground planes. This construction minimizes dispersion and ensures repeatable 50 Ω impedance-critical for valid EV1HMC349ALP4C measurement data.

How is thermal management implemented on the EV1HMC349ALP4C?

Thermal management on the EV1HMC349ALP4C centers on the HMC349ALP4CE's exposed pad: it is soldered directly to a large copper area on the top layer, connected via ≥20 plated-through vias to internal and bottom ground planes. Additional vias surround RF traces to reduce thermal resistance. This layout achieves θJC = 67.1°C/W (through path) as specified in the HMC349ALP4CE datasheet, enabling reliable operation at +85°C case temperature during high-power RF testing. The EV1HMC349ALP4C design explicitly references this thermal strategy in its documentation.

Can the EV1HMC349ALP4C be used to measure switching time parameters like tON/tOFF?

Yes, the EV1HMC349ALP4C supports accurate switching time measurement: its CTRL and EN control lines are brought out to accessible DC pins (J4 and J8) with short, low-inductance routing, and RF output is available at SMA connectors (J1–J3) with minimal parasitic delay. The board's 50 Ω CPWG traces and absence of series resistors or filters preserve signal edge fidelity, enabling direct oscilloscope capture of RF output rise/fall times (tRISE/tFALL = 60 ns typ.) and on/off delays (tON/tOFF = 150 ns typ.) as defined in the HMC349ALP4CE datasheet. The EV1HMC349ALP4C layout intentionally minimizes skew between control and RF paths to ensure measurement validity.