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Analog Devices Inc. EV1HMC524ALC3B
- Part No.:
- EV1HMC524ALC3B
- Manufacturer:
- Analog Devices Inc.
- Category:
- RF, RFID, Wireless Evaluation Boards
- Package:
- Datasheet:
-
EV1HMC524ALC3B.pdf
- Description:
- EVAL BOARD FOR HMC524ALC3B
- Quantity:
- Payment:
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Product details
Overview
HMC524ALC3B from Analog Devices is a GaAs monolithic microwave integrated circuit (MMIC) I/Q mixer operating from 22 GHz to 32 GHz RF, with dc–4.5 GHz IF bandwidth and 9 dB typical conversion loss. It functions as an image-reject downconverter or single-sideband upconverter in point-to-point radio front-ends requiring high-frequency signal translation without DC bias.
For engineers reviewing the HMC524ALC3B datasheet, HMC524ALC3B pinout, HMC524ALC3B application, or HMC524ALC3B equivalent, this page delivers verified RF performance metrics, validated pin functionality, thermal and isolation behavior across temperature, and real-world sideband rejection data for millimeter-wave system design.
Technical Context
The HMC524ALC3B integrates two double-balanced mixer cells and an on-die 90° hybrid coupler in a GaAs MESFET process, enabling intrinsic quadrature phase generation without external hybrids for basic operation. Its passive architecture eliminates DC bias requirements while supporting both upper- and lower-sideband configurations via external IF hybrid selection.
It delivers 20 dB typical image rejection and 26 dB typical sideband rejection depending on mode, with LO-to-RF isolation of 35 dB and LO-to-IF isolation of 25 dB - critical for suppressing local oscillator feedthrough in sensitive mmWave receivers and transmitters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RF Frequency Range | 22 GHz to 32 GHz - supports E-band wireless infrastructure and military radar bands. |
| IF Frequency Range | DC to 4.5 GHz - enables baseband-to-S-band IF interfaces without external DC blocking for dc-coupled applications. |
| Conversion Loss (Downconv.) | 9 dB typical - defines minimum gain budget required in receiver chain before IF amplification. |
| Image Rejection | 20 dB typical - suppresses unwanted image band without external filtering, reducing system complexity. |
| P1dB Input Power | 17 dBm - sets maximum linear input level before 1 dB compression in downconversion mode. |
| LO Drive Level | 17 dBm - required LO power for optimal conversion loss and linearity; no internal LO amplification. |
| IP3 (Input Third-Order) | 18 dBm typical - determines intermodulation distortion floor in multi-carrier mmWave systems. |
| Package | 12-lead, 3 mm × 3 mm SMT ceramic - RoHS-compliant, leadless, with exposed ground pad for RF thermal and grounding integrity. |
Pinout & Package
12-lead, 3 mm × 3 mm leadless RoHS-compliant surface-mount ceramic package (E-12-4), featuring an exposed ground pad (EPAD) that must be soldered to PCB ground plane for RF stability and thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 3, 7, 8, 10 | GND | RF/dc ground connections - all must be low-inductance soldered to PCB ground plane and EPAD. |
| 2 | RF | Radio frequency port - AC-coupled, 50 Ω matched; primary signal path for 22–32 GHz input/output. |
| 4, 6 | IF1 / IF2 | Quadrature IF outputs/inputs - differential I/Q ports supporting dc–4.5 GHz; each limited to ±2 mA current. |
| 9 | LO | Local oscillator port - DC-coupled, 50 Ω matched; accepts 17 dBm LO drive at 22–32 GHz. |
| 5, 11, 12 | NIC | No internal connection - electrically floating; must not be tied to any net or ground. |
| EPAD | Exposed Pad | Thermal and RF ground - mandatory connection to PCB ground plane for junction temperature control and signal integrity. |
Key Features
| Feature | Design Value |
|---|---|
| Passive mixer architecture | No DC bias required - simplifies power supply design and eliminates bias network parasitics at mmWave frequencies. |
| Intrinsic 90° hybrid integration | On-die quadrature generation - enables compact image-reject operation without external hybrid for basic configurations. |
| High LO-to-RF isolation | 35 dB typical - minimizes LO leakage into antenna path, easing front-end filter requirements in TDD/FDD systems. |
| Wide IF bandwidth (dc–4.5 GHz) | Supports zero-IF and complex IF architectures - allows direct baseband sampling or S-band IF digitization. |
| RoHS-compliant SMT ceramic package | 3 mm × 3 mm footprint with EPAD - compatible with standard reflow processes and provides repeatable RF performance. |
| Operating temperature range | −40°C to +85°C - qualified for outdoor wireless infrastructure and military environmental conditions. |
Applications
| Point-to-Point Radios | Test & Measurement Equipment |
|---|---|
|
Use Scenario: High-capacity backhaul links operating in E-band (60–90 GHz licensed/unlicensed) using 24–28 GHz or 28–32 GHz sub-bands. IC Role / Device Role / Timing Role: Image-reject downconverter translating 22–32 GHz RF to dc–4.5 GHz IF for ADC interfacing. Use Value: 20 dB image rejection reduces need for bulky image-reject filters; 9 dB conversion loss maintains link budget efficiency. |
Use Scenario: Vector signal analyzers and mmWave signal generators requiring calibrated I/Q mixing for modulation analysis. IC Role / Device Role / Timing Role: Single-sideband upconverter generating clean 22–32 GHz RF signals from baseband I/Q inputs. Use Value: 26 dB sideband rejection ensures accurate EVM measurement; passive design avoids LO pulling artifacts. |
| Military Radar Systems | VSAT Terminals |
|
Use Scenario: Compact active electronically scanned array (AESA) T/R modules needing low-SWaP mmWave downconversion. IC Role / Device Role / Timing Role: Quadrature downconverter in receive chain for Doppler processing and pulse compression. Use Value: 17 dBm P1dB handles high-dynamic-range radar returns; −40°C to +85°C rating supports harsh field deployment. |
Use Scenario: Ka-band VSAT terminals performing frequency translation between L-band IF and 27.5–30 GHz satellite uplink bands. IC Role / Device Role / Timing Role: Upconverter translating dc–4.5 GHz IF to 22–32 GHz RF for satellite transmission. Use Value: 18 dBm IP3 mitigates intermodulation in multi-channel VSAT systems; 3 mm × 3 mm size eases integration into compact ODU designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar I/Q mixer applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| HMC774ALC3 | Wider RF range (18–44 GHz), higher LO drive (20 dBm), larger 4 mm × 4 mm package. | Better suited for wideband test equipment; less optimal for space-constrained E-band radios. | Select when broader frequency coverage or higher LO power tolerance is required; verify PCB layout compatibility. |
| Qorvo QM11020 | GaAs pHEMT-based; 24–34 GHz RF, 10 dB conversion loss, 15 dB image rejection, 5 mm × 5 mm QFN. | Lower image rejection and larger footprint; optimized for cost-sensitive VSAT vs. high-performance radar. | Consider for volume VSAT production where moderate performance suffices and thermal constraints allow larger package. |
Compared with HMC774ALC3 and QM11020, the HMC524ALC3B offers superior image rejection (20 dB vs. ≤15 dB) and smallest footprint (3 mm × 3 mm), making it optimal for SWaP-constrained E-band radios and precision instrumentation where quadrature accuracy is critical.
Availability
HMC524ALC3B is available at Aetrix Electronics and suitable for point-to-point radios, military radar systems, test equipment, and VSAT terminals requiring stable component supply across extended temperature ranges and high-frequency reliability.
Supply support for HMC524ALC3B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Analog Devices is a global leader in high-performance analog, mixed-signal, and RF ICs, serving communications, industrial, automotive, and defense markets with precision signal processing solutions.
The HMC524ALC3B belongs to Analog Devices' Hittite Microwave MMIC product line, engineered specifically for millimeter-wave communication and sensing applications demanding high integration, low noise, and robust RF performance.
FAQ
What is the recommended LO drive level for optimal performance of the HMC524ALC3B?
The HMC524ALC3B achieves its specified 9 dB typical conversion loss and 20 dB image rejection at a nominal LO drive level of 17 dBm. Operating below 13 dBm degrades conversion loss and balance; exceeding 19 dBm risks compression and increased distortion. The datasheet specifies absolute maximum LO input power as 25 dBm, but sustained operation above 19 dBm is not recommended for linearity-critical applications. Always verify LO power at the HMC524ALC3B pin using calibrated measurement.
Can the HMC524ALC3B operate with DC-coupled IF signals?
Yes, the HMC524ALC3B supports DC-coupled IF operation on pins 4 (IF1) and 6 (IF2), but each pin must not source or sink more than ±2 mA of current to prevent device malfunction or failure. For true DC-to-4.5 GHz IF bandwidth, external bias tees or active IF amplifiers with appropriate current limiting are required. If DC coupling is unnecessary, off-chip DC blocking capacitors are recommended to simplify interface design.
How does the HMC524ALC3B achieve image rejection without an external hybrid?
The HMC524ALC3B integrates a monolithic 90° hybrid coupler and two double-balanced mixer cells on a single GaAs die, enabling intrinsic quadrature signal generation. This allows basic image-reject downconversion using only the IC's IF1 and IF2 outputs - though external hybrid coupling improves amplitude/phase balance and rejection beyond the 20 dB typical value. The datasheet confirms "taken without external 90° hybrid" for key specs like LO-to-IF isolation and amplitude balance.
What is the thermal resistance (θJA) of the HMC524ALC3B package?
The HMC524ALC3B in its E-12-4 ceramic package has a natural convection junction-to-ambient thermal resistance (θJA) of 120°C/W, measured per JEDEC JESD51-2 in a one cubic foot sealed enclosure. Effective thermal management requires low-thermal-resistance PCB layout: the exposed pad (EPAD) must be fully soldered to a solid ground plane with multiple thermal vias. Junction temperature must remain below 175°C under all operating conditions, especially at +85°C ambient with 560 mW max dissipation.
Is the HMC524ALC3B suitable for upconversion applications?
Yes, the HMC524ALC3B functions as a single-sideband upconverter with 6 dB typical conversion loss and 26 dB typical sideband rejection when driven with dc–4.5 GHz IF signals on IF1/IF2 and a 22–32 GHz LO on pin 9. It supports both upper and lower sidebands depending on external hybrid configuration. Upconverter performance is characterized in the datasheet with IFIN = 100 MHz and 2500 MHz, confirming usability across baseband and S-band IF inputs.
EV1HMC524ALC3B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Analog Devices Inc.
- Series:
- -
- Packaging:
- Box
- Product Status:
- Active
- Type:
- Mixer
- Frequency:
- 22GHz ~ 32GHz
- Contents:
- Board(s)
- Utilized IC / Part:
- HMC524ALC3B
EV1HMC524ALC3B FAQ
1.How can I place an order for EV1HMC524ALC3B through Aetrix?
Please submit a Request for Quotation (RFQ) for EV1HMC524ALC3B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for EV1HMC524ALC3B reliable?
The price and inventory of EV1HMC524ALC3B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for EV1HMC524ALC3B is usually 5 days.
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Once your EV1HMC524ALC3B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for EV1HMC524ALC3B?
For technical support, including EV1HMC524ALC3B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your EV1HMC524ALC3B requirements.
6.How does Aetrix verify that EV1HMC524ALC3B is sourced from the original manufacturer or authorized distributors?
All EV1HMC524ALC3B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that EV1HMC524ALC3B meets industry standards.
7.What is the process for return or replacement of EV1HMC524ALC3B?
All EV1HMC524ALC3B units undergo pre-shipment inspection (PSI). If there is an issue with EV1HMC524ALC3B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The EV1HMC524ALC3B part is unused and in its original packaging.
Return procedure for EV1HMC524ALC3B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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