Analog Devices Inc. EV1HMC798ALC4

Overview

EV1HMC798ALC4 from Analog Devices is a GaAs MMIC subharmonic SMT mixer operating from 24 GHz to 34 GHz, supporting both upconversion and downconversion with 5 V single-supply operation, 10–10.5 dB typical conversion loss, and integrated LO amplifier. It enables compact microwave transceivers in SATCOM ground terminals and point-to-point radios.

For engineers reviewing the EV1HMC798ALC4 datasheet, EV1HMC798ALC4 pinout, EV1HMC798ALC4 application, or EV1HMC798ALC4 equivalent, key selection criteria include RF/LO/IF frequency coverage, 2×LO-to-RF isolation (36 dB typ. at 30–34 GHz), dc-to-4 GHz IF bandwidth, subharmonic pumping architecture, and RoHS-compliant 24-terminal LCC package compatibility with surface-mount assembly.

Technical Context

The EV1HMC798ALC4 implements a subharmonically pumped (×2) mixing architecture with an on-die LO amplifier, eliminating external LO buffer stages and enabling direct 12–18 GHz LO drive for 24–34 GHz RF translation. Its dc-coupled IF port supports baseband and low-IF architectures up to 4 GHz.

It delivers dual-mode operation: as an upconverter (IFIN = dc–4 GHz → RF = 24–34 GHz) or downconverter (RF = 24–34 GHz → IF = dc–4 GHz), with sideband-selectable configuration via LO injection (low-side or high-side). Thermal design relies on exposed pad grounding per JEDEC MSL3 reflow profile.

Key Specifications

Pinout & Package

EV1HMC798ALC4 is housed in a RoHS-compliant, leadless 3.90 mm × 3.90 mm ceramic LCC package (E-24-11) with 24 terminals and an exposed thermal pad requiring RF/dc ground connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar subharmonic mixer applications.

Compared with HMC1048LC4 and QPM1002, EV1HMC798ALC4 uniquely combines subharmonic pumping, integrated LO amplification, dc–4 GHz IF bandwidth, and 5 V single-supply operation - making it optimal for SWaP-constrained E-band transceivers requiring simplified LO architecture and wide IF flexibility.

Availability

EV1HMC798ALC4 is available at Aetrix Electronics and suitable for microwave VSAT terminals, point-to-point radios, and SATCOM ground stations requiring stable component supply across extended temperature ranges and high-frequency performance consistency.

Supply support for EV1HMC798ALC4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices is a global leader in high-performance analog, mixed-signal, and RF ICs, serving communications, defense, instrumentation, and industrial markets with precision signal processing solutions.

The HMC series targets microwave and millimeter-wave applications, with the EV1HMC798ALC4 specifically engineered for E-band transceiver integration-emphasizing subharmonic efficiency, wide IF bandwidth, and surface-mount manufacturability.

FAQ

What is the recommended LO drive level for optimal performance of the EV1HMC798ALC4?

The EV1HMC798ALC4 specifies a typical LO drive level of 4 dBm across its 12–18 GHz range, with acceptable operation from 0 to 6 dBm. At 4 dBm, the device achieves best-in-class conversion loss (10 dB typ.) and input IP3 (17.5–20 dBm). Lower drive levels increase conversion loss; higher levels yield diminishing linearity returns and risk exceeding absolute maximum ratings. The integrated LO amplifier ensures consistent performance without external buffering.

Can the EV1HMC798ALC4 operate in both upconversion and downconversion modes?

Yes, the EV1HMC798ALC4 supports both upconversion (IFIN = dc–4 GHz → RF = 24–34 GHz) and downconversion (RF = 24–34 GHz → IF = dc–4 GHz), selectable via LO injection configuration (low-side or high-side). Performance data in the datasheet confirms validated operation in both modes across all RF sub-bands, with distinct IP3, P1dB, and isolation specs published for each.

What is the function of the NIC pins on the EV1HMC798ALC4?

The NIC (Not Internally Connected) pins - numbered 2, 3, 10, 17, 20, 21, 22, and 23 - have no internal die connection. They may be tied to RF/dc ground on the PCB to enhance mechanical stability, improve thermal conduction, or add shielding without affecting electrical performance. Their grounding does not alter conversion loss, isolation, or linearity metrics per characterization data.

How should the exposed pad (EPAD) of the EV1HMC798ALC4 be handled in PCB layout?

The EPAD of the EV1HMC798ALC4 must be soldered to a solid RF and DC ground plane using a minimum 3×3 array of thermal vias (≥9 vias total) per JEDEC JESD51-2 guidelines. This ensures adequate thermal dissipation (θJC = 119°C/W) and maintains RF return path integrity. Incomplete or high-impedance EPAD connection degrades conversion loss, increases junction temperature, and risks reliability failure above 85°C ambient.

Does the EV1HMC798ALC4 require external dc blocking on the IF port?

The IF port (Pin 5) is dc-coupled and supports operation down to 0 Hz. External dc blocking is only required if dc operation is undesirable - for example, to prevent IF-stage bias interference. When used in zero-IF receivers, no blocking capacitor is needed. However, the port must not source or sink more than ±3 mA; exceeding this risks die malfunction or permanent damage per Absolute Maximum Ratings.