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Analog Devices Inc. EV1HMC815BLC5

Part No.:
EV1HMC815BLC5
Manufacturer:
Analog Devices Inc.
Category:
RF, RFID, Wireless Evaluation Boards
Package:
Datasheet:
AetrixEV1HMC815BLC5.pdf
Description:
EVAL BOARD FOR HMC815B
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,968

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Product details

Overview

EV1HMC815BLC5 from Analog Devices is a GaAs MMIC I/Q upconverter operating from 21 GHz to 27 GHz RF, with 10.5–14.5 GHz LO input and DC–3.75 GHz IF bandwidth. It delivers 12 dB typical conversion gain, 20 dBc sideband rejection, and 20 dBm OP1dB, enabling high-fidelity microwave signal synthesis in compact SSB transmitters.

For engineers reviewing the EV1HMC815BLC5 datasheet, EV1HMC815BLC5 pinout, EV1HMC815BLC5 application, or EV1HMC815BLC5 equivalent, this evaluation board supports rapid characterization of RF upconversion performance, sideband suppression, and thermal behavior under real-world bias and drive conditions across −40°C to +85°C.

Technical Context

The EV1HMC815BLC5 implements an integrated I/Q mixer topology with on-chip 2× LO multiplier and RF driver amplifier, eliminating external multipliers and wire-bonded hybrids. Its architecture enables sideband selection via external 90° hybrid at IF1/IF2 ports, reducing post-upconversion filtering requirements.

It operates with three independent supply rails (VDD1 for LO amp, VDD2/VDD3 for RF amp) and requires gate bias (VGG) tuning for optimal linearity. The exposed-pad 32-terminal ceramic LCC package ensures thermal stability and RF grounding critical for mmWave operation.

Key Specifications

Parameter Value and Actual Design Meaning
RF Frequency Range 21–27 GHz: Supports E-band point-to-point radio and satellite uplinks requiring stable output above 20 GHz.
LO Frequency Range 10.5–14.5 GHz: Enables high-side or low-side injection with 2× internal multiplication for clean local oscillator synthesis.
IF Bandwidth DC–3.75 GHz: Accommodates wideband baseband or IF signals including 2.5 GHz LTE/WiMAX and radar chirps.
Conversion Gain 12 dB typical: Reduces need for cascaded amplification stages in transmitter chains while maintaining SNR.
Sideband Rejection 20 dBc typical: Limits unwanted image energy without requiring bulky external filters in SSB systems.
OIP3 27 dBm typical: Supports high dynamic range operation in multi-carrier or wideband modulation schemes.
OP1dB 20 dBm typical: Delivers sufficient saturated output power for direct drive of antenna feed networks or PA stages.

Pinout & Package

Package: 4.90 mm × 4.90 mm, 32-terminal ceramic LCC with exposed thermal pad (EPAD), RoHS compliant, MSL3, rated for −40°C to +85°C operation.

Pin/Terminal Circuit Role Design Meaning
6, 18, 21 VDD1 / VDD3 / VDD2 Independent bias rails: VDD1 powers LO amplifier; VDD2/VDD3 power RF amplifier stage-enables independent optimization of LO drive and RF output linearity.
9 LOIN 50 Ω ac-coupled LO input port accepting 0–6 dBm drive; matched for minimal reflection across 10.5–14.5 GHz.
12 VGG Adjustable gate voltage for RF amplifier FETs; sets quiescent current and impacts OIP3/OP1dB trade-off.
14 RFOUT 50 Ω ac-coupled RF output delivering upconverted signal; return loss ≥12 dB across full 21–27 GHz band.
29, 31 IF1, IF2 Differential quadrature IF inputs; require external 90° hybrid to select upper or lower sideband-no internal phase shifters.
10, 13, 15, 30, 32 GND Multiple RF/dc ground terminals plus EPAD ensure low-inductance return path essential for mmWave stability and isolation.

Key Features

Feature Design Value
I/Q mixer with 2× LO multiplier Eliminates need for external LO doubler IC or discrete transistor doubler, reducing BOM count and layout complexity.
Sideband rejection ≥20 dBc Enables single-sideband transmission with relaxed filter requirements-critical for spectral efficiency in licensed bands.
Exposed thermal pad (EPAD) Provides low-thermal-resistance path (θJC = 46.7°C/W) to PCB ground plane, sustaining 300 mA total drain current at +85°C.
DC–3.75 GHz IF bandwidth Supports direct baseband upconversion (e.g., radar IF, software-defined radio) without IF translation stages.
32-pin ceramic LCC Surface-mount compatible package with no wire bonds-enables automated assembly and repeatable RF performance vs. hybrid modules.

Applications

Point-to-Point Radios Military Radar Transmitters

Use Scenario: High-capacity backhaul links in E-band (71–76 GHz, 81–86 GHz) using frequency translation architectures.

IC Role / Device Role / Timing Role: Primary RF upconverter translating 2.5 GHz IF to 24 GHz carrier for waveguide or planar antenna feed.

Use Value: 20 dBc sideband rejection minimizes adjacent-channel interference; 20 dBm OP1dB drives passive splitters directly without added PA stages.

Use Scenario: Solid-state active electronically scanned array (AESA) transmit modules requiring low-phase-noise, high-linearity upconversion.

IC Role / Device Role / Timing Role: Final-stage upconverter in T/R module, accepting baseband I/Q from FPGA DACs and generating mmWave RF output.

Use Value: DC–3.75 GHz IF bandwidth accommodates wide instantaneous bandwidth radar waveforms; GaAs process ensures radiation tolerance.

Satellite Communications Electronic Warfare (EW) Jammers

Use Scenario: Uplink payload in LEO satellite terminals transmitting telemetry and command signals in Ka-band sub-bands.

IC Role / Device Role / Timing Role: Compact, thermally robust upconverter replacing larger hybrid assemblies in SWaP-constrained payloads.

Use Value: 4.9 mm × 4.9 mm LCC footprint reduces PCB area by >50% vs. legacy hybrid solutions; −40°C to +85°C rating supports orbital thermal cycling.

Use Scenario: Wideband noise or modulated jamming transmitters targeting radar receivers in X/Ku/Ka bands.

IC Role / Device Role / Timing Role: Core upconversion element generating agile, high-power deceptive signals from programmable IF sources.

Use Value: 27 dBm OIP3 enables clean multi-tone jamming without intermodulation distortion; 2× LO multiplication simplifies LO chain design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar I/Q upconverter applications.

Alternative Part Technical Difference Application Difference Selection Advice
HMC815ALC5 Same die, but qualified for −55°C to +105°C operation; higher MSL1 rating and extended temperature test coverage. Required for aerospace-grade programs demanding wider thermal margin and enhanced reliability screening. Select HMC815ALC5 when qualification to MIL-STD-883 or AEC-Q200 is mandatory; EV1HMC815BLC5 suffices for commercial industrial use.
Qorvo QM11020 SiGe-based; 18–26 GHz RF range; 15 dB conversion gain; 18 dBc sideband rejection; requires external LO buffer and hybrid. Better suited for cost-sensitive, lower-performance EW or test equipment where ±1 GHz RF range reduction is acceptable. Choose QM11020 only if system-level integration favors SiGe supply chain or if 21–27 GHz full-band coverage is not required.

Compared with HMC815ALC5, EV1HMC815BLC5 trades extended temperature qualification for lower unit cost and faster lead time; versus QM11020, it delivers superior sideband rejection and integrated LO multiplication at the expense of GaAs-specific biasing complexity.

Availability

EV1HMC815BLC5 is available at Aetrix Electronics and suitable for point-to-point radios, military radar transmitters, and satellite communications requiring stable component supply across extended temperature ranges and high-frequency performance consistency.

Supply support for EV1HMC815BLC5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices is a global leader in high-performance analog, mixed-signal, and RF ICs, serving precision instrumentation, communications, and defense markets since 1965.

The HMC815B product line delivers integrated mmWave upconverters targeting E-band wireless infrastructure and electronic warfare systems where size, linearity, and sideband purity are critical.

FAQ

What is the primary function of the EV1HMC815BLC5?

The EV1HMC815BLC5 is an evaluation board for the HMC815B GaAs MMIC I/Q upconverter. It enables engineers to characterize the device's 21–27 GHz RF upconversion performance, including conversion gain, sideband rejection, and linearity, under controlled bias and thermal conditions. The EV1HMC815BLC5 provides all necessary matching networks, decoupling, and interface connectors to validate the HMC815B in real system environments.

Does the EV1HMC815BLC5 include the HMC815B IC?

Yes, the EV1HMC815BLC5 evaluation board integrates one HMC815B die in its 32-terminal ceramic LCC package. The board is pre-populated with the IC, calibrated RF/IF/LO matching components, and SMA connectors for all ports (RFOUT, LOIN, IF1, IF2), allowing immediate bench testing without additional assembly.

What power supplies are required to operate the EV1HMC815BLC5?

The EV1HMC815BLC5 requires three independent DC supplies: +4.5 V for VDD1 (LO amplifier), +4.5 V for VDD2/VDD3 (RF amplifier), and a tunable −0.5 V to −1.5 V for VGG (RF FET gate bias). Current draw is approximately 300 mA total (270–300 mA for RF section, 80–120 mA for LO section), as specified in the HMC815B datasheet.

Can the EV1HMC815BLC5 be used for both upper and lower sideband upconversion?

Yes, the EV1HMC815BLC5 supports both upper and lower sideband operation by reconfiguring the external 90° hybrid connection at the IF1/IF2 ports. The HMC815B's I/Q architecture allows sideband selection via hybrid polarity-no hardware change to the EV1HMC815BLC5 board is needed, only IF signal routing adjustment.

Is thermal management provided on the EV1HMC815BLC5 evaluation board?

Yes, the EV1HMC815BLC5 features a large copper thermal pad beneath the HMC815B's exposed pad (EPAD), connected via 5 × 5 thermal vias to internal ground planes. This design achieves θJA ≈ 46.4°C/W, enabling stable operation at full bias across −40°C to +85°C ambient per the HMC815B datasheet specifications.

EV1HMC815BLC5 Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Packaging:
Bulk
Product Status:
Active
Type:
Upconverter
Frequency:
21GHz ~ 27GHz
Contents:
Board(s)
Utilized IC / Part:
HMC815B

EV1HMC815BLC5 FAQ

1.How can I place an order for EV1HMC815BLC5 through Aetrix?

Please submit a Request for Quotation (RFQ) for EV1HMC815BLC5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for EV1HMC815BLC5 reliable?

The price and inventory of EV1HMC815BLC5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for EV1HMC815BLC5 is usually 5 days.

3.What payment methods are accepted for EV1HMC815BLC5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for EV1HMC815BLC5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for EV1HMC815BLC5?

EV1HMC815BLC5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your EV1HMC815BLC5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for EV1HMC815BLC5?

For technical support, including EV1HMC815BLC5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your EV1HMC815BLC5 requirements.

6.How does Aetrix verify that EV1HMC815BLC5 is sourced from the original manufacturer or authorized distributors?

All EV1HMC815BLC5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that EV1HMC815BLC5 meets industry standards.

7.What is the process for return or replacement of EV1HMC815BLC5?

All EV1HMC815BLC5 units undergo pre-shipment inspection (PSI). If there is an issue with EV1HMC815BLC5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The EV1HMC815BLC5 part is unused and in its original packaging.

Return procedure for EV1HMC815BLC5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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