Analog Devices Inc. EV1HMC952ALP5G

Overview

EV1HMC952ALP5G from Analog Devices is an evaluation board for the HMC952ALP5GE GaAs pHEMT MMIC 2 W power amplifier with integrated power detector, operating from 8–14 GHz. It delivers +34.5 dBm P1dB, 32 dB gain, +43 dBm IP3, and 26% PAE at +6 V/1400 mA, targeting high-linearity RF front-ends in SATCOM and point-to-point radios.

For engineers reviewing the EV1HMC952ALP5G datasheet, EV1HMC952ALP5G pinout, EV1HMC952ALP5G application, or EV1HMC952ALP5G equivalent, this page provides verified board-level specifications, supply chain support, manufacturer context, and design-critical FAQs - all aligned to the official Analog Devices evaluation PCB (600-00163-00) and its HMC952ALP5GE core device.

Technical Context

The EV1HMC952ALP5G implements a fully populated, RF-optimized reference design for the HMC952ALP5GE amplifier, featuring K-connector RF I/Os (J1, J2, J5, J6), DC bias access (J3, J4), and full decoupling network using 100 pF, 10 nF, and 4.7 µF capacitors per Vdd/Vgg rail. The board uses Rogers 4350 or Arlon FR4 substrate to maintain 50 Ω impedance integrity across the 8–14 GHz band.

It supports real-time output power monitoring via the on-die detector (Vdet) and temperature-compensated biasing (Vref), with all ground leads and the exposed paddle directly connected to a solid ground plane using multiple vias - matching the thermal and RF grounding requirements specified in the HMC952ALP5GE datasheet.

Key Specifications

Availability

EV1HMC952ALP5G is available at Aetrix Electronics and suitable for SATCOM transceivers, point-to-point microwave links, and military radar test benches requiring stable component supply, rapid prototyping validation, and production-ready RF layout reference.

Supply support for EV1HMC952ALP5G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF ICs, serving communications, industrial, automotive, and defense markets with precision signal processing solutions.

The EV1HMC952ALP5G belongs to Analog Devices' RF/Microwave Evaluation Platform family, designed to accelerate development of high-frequency power amplifier subsystems by providing fully characterized, application-validated hardware for GaAs and GaN MMICs.

FAQ

What is the purpose of the EV1HMC952ALP5G evaluation board?

The EV1HMC952ALP5G evaluation board is a ready-to-use RF test platform for the HMC952ALP5GE GaAs power amplifier. It enables immediate characterization of small-signal gain, saturated output power, linearity (IP3), and detector response across 8–14 GHz without custom PCB design. Engineers use EV1HMC952ALP5G to validate system integration, optimize bias settings, and verify thermal performance before committing to production layout.

Does the EV1HMC952ALP5G include the HMC952ALP5GE device pre-mounted?

Yes, the EV1HMC952ALP5G evaluation board ships with the HMC952ALP5GE die permanently mounted in its 24-lead LFCSP package (5 mm × 5 mm) and fully assembled with all required decoupling capacitors, DC bias headers, and K-connector RF interfaces. No additional assembly or soldering is needed to begin RF testing of EV1HMC952ALP5G.

What RF connector types are used on the EV1HMC952ALP5G?

The EV1HMC952ALP5G uses four K-type SRI connectors: J1 and J2 for RF input/output paths, and J5 and J6 as secondary RF test points supporting 2.92 mm interfaces up to 40 GHz. All connectors are grounded through the PCB's multi-via ground plane to minimize return loss and ensure repeatable 50 Ω measurements when evaluating EV1HMC952ALP5G.

How is DC bias applied to the HMC952ALP5GE on the EV1HMC952ALP5G board?

DC bias is applied via two dedicated 2-pin headers: J3 supplies drain voltage (Vdd1–Vdd4) and J4 supplies gate bias (Vgg1–Vgg3). Each rail includes series ferrite beads and the full three-capacitor decoupling stack (100 pF, 10 nF, 4.7 µF). This configuration ensures stable operation of EV1HMC952ALP5G under high-current conditions (1400 mA) while suppressing switching noise and supply ripple.

Can the EV1HMC952ALP5G be used to calibrate the on-chip power detector (Vdet)?

Yes, the EV1HMC952ALP5G provides direct access to Vdet (pin 13) and Vref (pin 12) via test points and routed traces, enabling calibration of the integrated detector against known RF power standards. The board's layout preserves detector signal integrity by minimizing parasitic capacitance and routing Vdet over controlled-impedance lines - essential for accurate power monitoring during EV1HMC952ALP5G characterization.