STMicroelectronics EVL250WMG1L

Overview

EVL250WMG1L from STMicroelectronics is a 400 V–24 V / 10.5 A resonant LLC DC-DC demonstration board based on the MasterGaN1L GaN power stage, L6599A resonant controller, and SRK2001A synchronous rectifier controller. It delivers up to 250 W output power at >92% peak efficiency, features short-circuit/overcurrent protection, input voltage monitoring for brown-out protection and sequencing, and achieves 34 W/in³ power density in an 80 × 50 mm footprint.

For engineers reviewing the EVL250WMG1L datasheet, EVL250WMG1L application, EVL250WMG1L block diagram, or EVL250WMG1L alternative evaluation boards, this page provides verified design context, efficiency vs. load data, protection architecture, and integration guidance for industrial high-density DC-DC conversion.

Technical Context

The EVL250WMG1L implements a two-stage architecture: a primary-side motherboard hosting the L6599A-based LLC resonant controller and planar transformer, plus two daughterboards - one integrating the MasterGaN1L (dual 650 V GaN HEMT + gate driver) and another embedding the SRK2001A and secondary-side MOSFETs for synchronous rectification. No primary-side heatsinks are required.

It operates as a D2D (DC-to-DC) converter with input voltage monitoring enabling correct startup sequencing in cascaded power systems and brown-out lockout below nominal 400 V ±10%. Efficiency remains ≥93.35% from 25% to 100% load, with no-load consumption at 361 mW.

Key Specifications

Availability

EVL250WMG1L is available at Aetrix Electronics and suitable for industrial DC-DC converters, high-density AC-DC adapters, and consumer SMPS designs requiring stable component supply, rapid prototyping validation, and GaN-based efficiency benchmarks.

Supply support for EVL250WMG1L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, analog ICs, and silicon carbide/GaN solutions for industrial, automotive, and consumer markets.

The EVL250WMG1L belongs to ST's evaluation board portfolio targeting high-efficiency, high-power-density DC-DC conversion - specifically enabling fast adoption of GaN-based resonant topologies in space-constrained industrial power systems.

FAQ

What topology does the EVL250WMG1L implement?

The EVL250WMG1L implements a resonant LLC topology using the L6599A controller on the primary side and the SRK2001A synchronous rectifier controller on the secondary side. This topology enables zero-voltage switching (ZVS) across wide load ranges, minimizing switching losses and supporting high-frequency operation enabled by the integrated MasterGaN1L GaN power stage.

Does the board include protection features beyond overcurrent?

Yes - the EVL250WMG1L includes comprehensive protection: short-circuit protection on the 24 V output, overcurrent limiting, overvoltage shutdown, and input voltage monitoring with brown-out detection and sequencing control. These functions prevent damage during fault conditions and ensure safe startup in multi-stage power architectures.

Can the EVL250WMG1L be used with non-400 V input sources?

No - the board is designed and validated exclusively for 400 V ±10% nominal input. Operation outside this range risks violating the L6599A UVLO thresholds, exceeding MasterGaN1L voltage ratings, and compromising efficiency or reliability. Input voltage monitoring is calibrated for this specific range and cannot be reconfigured.

Is the MasterGaN1L module replaceable with discrete GaN FETs?

No - the MasterGaN1L is a monolithic half-bridge module integrating two 650 V GaN HEMTs and a dedicated gate driver in a single 9 × 9 mm QFN package. Its layout, timing, and drive characteristics are co-optimized with the L6599A and PCB routing; substitution with discrete GaN FETs would require full redesign of gate drive, layout, and loop compensation.