STMicroelectronics EVLSTDRIVEG611

Overview

EVLSTDRIVEG611 from STMicroelectronics is an evaluation board for the STDRIVEG611 600 V high-speed half-bridge GaN gate driver, integrated with two 75 mΩ typ., 650 V e-mode GaN HEMTs (SGT120R65AL) in PowerFLAT 5×6 mm packages. It supports motor control and high-efficiency power conversion with tunable dV/dt (10 V/ns typ.), programmable overcurrent protection (9.5 A threshold), and onboard deadtime generation for single-PWM-to-dual-input conversion.

For engineers reviewing the EVLSTDRIVEG611 datasheet, EVLSTDRIVEG611 pinout, EVLSTDRIVEG611 application, or EVLSTDRIVEG611 equivalent, this board enables rapid validation of GaN-based half-bridge switching performance, thermal behavior under hard-switching conditions, and system-level integration of STDRIVEG611's separated sink/source drive, SmartShutDown fault response, and 3.3 V auxiliary supply.

Technical Context

The EVLSTDRIVEG611 implements a complete half-bridge power stage using STDRIVEG611 QFN-18 (4×5 mm) gate driver ICs and dual SGT120R65AL GaN transistors. It features independent high-side/low-side gate drive paths with separated sink/source pins, integrated bootstrap diodes, and active overcurrent sensing via a 25 mΩ shunt resistor (R5) feeding the CIN input.

Onboard circuitry includes a programmable deadtime generator built with 74LVC1G86Q (XOR) and 74LV1T87GV (XNOR) logic gates, adjustable via trimmers TR1/TR2 (1 kΩ), and a ST715MR 3.3 V LDO regulator delivering up to 50 mA. The PCB is a 2-layer, 2 oz FR-4 design (56 × 70 mm) with measured R_th(J‑A) = 23 °C/W (46 °C/W per GaN device) in still air.

Key Specifications

Availability

EVLSTDRIVEG611 is available at Aetrix Electronics and suitable for motor control development, GaN power stage characterization, and high-efficiency DC-DC converter prototyping requiring stable component supply and validated reference design support.

Supply support for EVLSTDRIVEG611 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and analog/mixed-signal devices for industrial, automotive, and consumer applications.

The EVLSTDRIVEG611 belongs to ST's GaN ecosystem evaluation platform line, developed specifically to accelerate adoption of high-voltage e-mode GaN transistors in high-frequency, high-efficiency power systems such as servo drives, UPS, and telecom rectifiers.

FAQ

What is the maximum recommended HV bus voltage for safe operation?

The EVLSTDRIVEG611 is rated for 650 V GaN devices and designed for HV bus operation up to 600 V DC. Operation above 600 V exceeds the SGT120R65AL's 650 V rating with margin and risks avalanche stress or premature failure. ST recommends limiting HV input to ≤600 V with appropriate derating for temperature and transient spikes.

Can the board be used with external gate drivers instead of STDRIVEG611?

No - the EVLSTDRIVEG611 PCB layout, component placement, and signal routing are optimized exclusively for the STDRIVEG611 QFN-18 footprint and its specific pinout (e.g., separated OUTH/OUTL, dedicated BOOT/VCCH/VCCL, CIN/FLT/SD/OD). There is no provision for alternate driver ICs or socketed replacements.

How is overcurrent protection triggered and reset?

Overcurrent is detected via voltage across R5 (25 mΩ shunt), scaled into the STDRIVEG611's CIN pin. At ≥9.5 A, SmartShutDown activates: both outputs disable, FLT goes low, and SD/OD enters open-drain mode for ~1 ms. Reset requires toggling STBY or cycling VCC - no automatic recovery occurs.

Is the 3.3 V regulator output short-circuit protected?

Yes - the ST715MR LDO (U2) includes internal short-circuit and thermal shutdown protection. Its 85 mA current limit and foldback behavior prevent damage during sustained overload, but continuous shorting will trigger thermal shutdown until the fault clears and temperature drops below the hysteresis threshold.