STMicroelectronics EVLSTGAP3SXS-H

Overview

EVLSTGAP3SXS-H from STMicroelectronics is a half-bridge evaluation board designed to validate the STGAP3SXS isolated single-channel gate driver for SiC MOSFETs, supporting up to 520 V DC bus voltage with SCTWA70N120G2V-4 devices (1200 V, 30 mΩ, 91 A), onboard 5.2 kV_pk isolated DC-DC supplies, and configurable ±19 V / ±17 V gate drive voltages - used in industrial high-power motor drives and EV traction inverter prototyping.

For engineers reviewing the EVLSTGAP3SXS-H datasheet, EVLSTGAP3SXS-H pinout, EVLSTGAP3SXS-H application, or EVLSTGAP3SXS-H equivalent, this board enables rapid validation of desaturation protection, Miller clamp functionality, soft turn-off behavior, negative gate driving, and reinforced galvanic isolation (5.7 kV_RMS) under real high-voltage switching conditions.

Technical Context

The board implements a dual-channel half-bridge topology using two STGAP3SXS drivers (U1 and U2), each delivering 10 A peak source/sink current with 75 ns propagation delay and rail-to-rail outputs optimized for SiC MOSFET switching dynamics. It integrates dedicated fault detection paths for DESAT, SOFTOFF, and CLAMP signals routed to test points and diagnostic LEDs.

Isolated power delivery uses Murata MGJ2D051515BSC DC-DC converters (5.4 kV_DC isolation) to generate independent high-side and low-side gate supply rails (VH_H/VL_H and VH_L/VL_L), while logic-level compatibility with both 3.3 V and 5 V MCUs is achieved via onboard LDO (LDK220M-R) and jumper-selectable VDD sourcing.

Key Specifications

Availability

EVLSTGAP3SXS-H is available at Aetrix Electronics and suitable for industrial motor control development, SiC-based power converter qualification, and high-voltage gate driver validation requiring stable component supply and traceable engineering samples.

Supply support for EVLSTGAP3SXS-H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive-grade ICs with strong focus on energy-efficient and high-reliability solutions.

The EVLSTGAP3SXS-H belongs to ST's power evaluation platform portfolio, developed specifically to accelerate adoption of SiC-based systems by providing validated, safety-compliant reference designs for isolated gate driving in high-voltage industrial and transportation applications.

FAQ

Can EVLSTGAP3SXS-H operate with 3.3 V microcontrollers?

Yes. The board supports 3.3 V MCU logic levels via an onboard LDK220M-R LDO that regulates VAUX = 5 V down to 3.3 V for VDD logic supply. Input pins accept 3.3 V TTL/CMOS signals with built-in hysteresis, and jumpers allow selection of appropriate gate drive voltage configurations without external level-shifting circuitry.

What is the maximum isolation voltage rating of the onboard DC-DC converters?

The Murata MGJ2D051515BSC isolated DC-DC converters provide 5.4 kV_DC isolation between input and output, enabling safe operation with up to 5.2 kV_pk working voltage across the isolation barrier - compliant with IEC 60747-17 and UL 1577 standards for reinforced insulation in high-voltage gate driver applications.

How does the board implement desaturation protection?

DESAT protection is implemented using the STGAP3SXS's integrated comparator, which monitors the voltage across the external sense resistor (R_sense) connected between the MOSFET source and ground. When overcurrent triggers a DESAT event, the driver asserts DIAG and disables GOUT after a programmable blanking time, with fault status indicated by onboard LED and accessible at test point TP33.

Is it possible to evaluate negative gate driving with this board?

Yes. The board supports negative gate driving through jumper-configurable bias networks that enable −4.7 V low-side gate voltage relative to source, improving noise immunity and preventing unintended turn-on during fast dV/dt transients. This configuration is validated for use with SiC MOSFETs like the SCTWA70N120G2V-4 under hard-switching conditions.