STMicroelectronics EVSTDRIVEG60015

Overview

EVSTDRIVEG60015 from STMicroelectronics is a demonstration board for the STDRIVEG600 600 V high-speed half-bridge gate driver, integrated with two 75 mΩ typ., 650 V e-mode GaN HEMTs in PowerFLAT HV 5×6 mm packages. It supports HV bus up to 500 V, features tunable hard-on/hard-off dV/dt control, on-board programmable deadtime generator (typ. 100 ns default), and a 3.3 V linear regulator (ST715M33R) supplying up to 50 mA for external logic.

For engineers reviewing the EVSTDRIVEG60015 datasheet, EVSTDRIVEG60015 pinout, EVSTDRIVEG60015 application, or EVSTDRIVEG60015 equivalent, this board enables rapid evaluation of GaN-based high-frequency power topologies including LLC resonant converters, active clamp flyback, and motor drive half-bridge stages - with direct access to high-bandwidth GH/GL gate monitoring via MMCX connectors.

Technical Context

The board implements a complete half-bridge power stage using STDRIVEG600 (SO16) driving dual SGT120R65AL GaN transistors, each rated 650 V / 75 mΩ, mounted bottom-side cooled in PowerFLAT HV 5×6 mm. The gate driver provides separated high-current sink/source pins, integrated bootstrap diode, and undervoltage lockout tailored for GaN V_GS limits (4.75–6.5 V).

Signal conditioning includes three independent Schmitt-trigger buffers (74LVC1G17W5) and one inverter (74LVC1G14W5) for PWM input conditioning and deadtime generation; trimmers TR1/TR2 adjust high-side and low-side deadtimes independently, while C3/C7 set timing range. Thermal resistance is 25 °C/W junction-to-ambient in still air on FR-4.

Key Specifications

Availability

EVSTDRIVEG60015 is available at Aetrix Electronics and suitable for high-frequency power converter design, GaN device characterization, and half-bridge topology validation requiring stable component supply and fast-turn prototyping support.

Supply support for EVSTDRIVEG60015 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and analog/mixed-signal solutions for industrial, automotive, and consumer applications.

This board belongs to ST's Power Evaluation Kit product line, engineered specifically to accelerate development and validation of wide-bandgap-based power systems - emphasizing ease of use, signal integrity, thermal performance, and safe HV probing capability.

FAQ

What input voltage ranges are supported for LIN/HIN and PWM signals?

LIN_B and HIN_B inputs accept 0–3.3 V or up to 20 V logic levels when configured for direct drive (R17/R18 installed); PWM input on J2 pin 7 accepts 0–3.3 V or 5 V TTL/CMOS levels. All digital inputs include Schmitt-trigger conditioning for noise immunity and clean edge detection.

Can the EVSTDRIVEG60015 be used with external gate drivers instead of the onboard STDRIVEG600?

No - the STDRIVEG600 is soldered as the sole gate driver IC (U6, SO16) and is not socketed or replaceable. The board is purpose-built to evaluate STDRIVEG600 driving GaN switches; external driver substitution would require PCB redesign and is outside the board's validated configuration.

Is the 3.3 V regulator capable of powering an STM32 microcontroller during full-load switching?

Yes - the ST715M33R delivers up to 85 mA with <1 % load regulation; typical MCU + peripheral current draw remains under 50 mA, well within specification. Output is decoupled with C21 (1 µF X7R) and C25 (100 nF X7R) for transient stability during PWM bursts.

Does the board include overtemperature protection, and how is it implemented?

Yes - the STDRIVEG600 IC integrates thermal shutdown with automatic recovery. Overtemperature fault is signaled via open-drain SD/OD pin (U6 pin 2), accessible at J2 pin 8. No discrete thermal sensor or external circuitry is used; protection activates at internal junction temperature exceeding safe operating limit.