STMicroelectronics EVSTDRIVEG600DM

Overview

EVSTDRIVEG600DM from STMicroelectronics is a demonstration board for the STDRIVEG600 600 V high-speed half-bridge gate driver, integrated with two 115 mΩ, 600 V MDmesh DM2 Power MOSFETs (STL33N60DM2) in PowerFLAT 8x8 HV package, supporting up to 450 V HV bus, 4.75–20 V VCC supply, and on-board programmable deadtime generation. It enables rapid evaluation of half-bridge switching performance in motor drives and SMPS.

For engineers reviewing the EVSTDRIVEG600DM datasheet, EVSTDRIVEG600DM pinout, EVSTDRIVEG600DM application, or EVSTDRIVEG600DM equivalent, this board supports configurable single-PWM or separate HIN/LIN input modes, on-board 3.3 V regulator (20 mA), thermal resistance measurement (20°C/W), and optional low-side shunt for current-mode control topologies.

Technical Context

The board implements a functional half-bridge power stage using STDRIVEG600 (SO16) driving dual STL33N60DM2 MOSFETs with Kelvin-source PowerFLAT 8x8 HV packaging. The gate driver features separated high-current sink/source outputs, integrated bootstrap diode, overtemperature protection, and 20 V max gate drive capability.

It integrates a discrete deadtime generator built with 74LVC1G14W5 and 74LVC1G17W5 Schmitt-trigger ICs plus trimmer potentiometers (TR1/TR2), enabling adjustable high-side and low-side deadtimes (typ. 400 ns at mid-position). A ST715M33R LDO supplies regulated 3.3 V at up to 20 mA for external logic.

Key Specifications

Availability

EVSTDRIVEG600DM is available at Aetrix Electronics and suitable for motor control prototyping, industrial SMPS design validation, and GaN/MOSFET half-bridge characterization requiring stable component supply and fast-turn evaluation support.

Supply support for EVSTDRIVEG600DM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, analog ICs, and sensors for automotive, industrial, and consumer applications.

This board belongs to ST's STDRIVE evaluation platform family, engineered to accelerate development of high-voltage half-bridge systems using their high-speed gate drivers and optimized MDmesh power MOSFETs.

FAQ

What input signal configurations does EVSTDRIVEG600DM support?

The board supports two primary modes: (1) single PWM input (J2 pin 7) routed through on-board Schmitt-trigger-based deadtime generator (TR1/TR2 adjustable), producing independent HIN_B and LIN_B signals; or (2) direct HIN/LIN inputs (J2 pins 4–5) with up to 20 V logic compatibility. Jumper settings (R2/R4 vs. R23/R24) select the mode per Table 2 of DB4465.

Can EVSTDRIVEG600DM drive GaN HEMTs?

Yes - the STDRIVEG600 gate driver on this board is explicitly specified by ST to drive enhanced-mode GaN HEMTs in addition to N-channel MOSFETs. Its 600 V rating, fast propagation delay (<100 ns), and separated high-current gate drive pins (OUT/LOFF/HOFF) meet critical requirements for GaN half-bridge switching with tight timing control.

What is the purpose of the optional low-side shunt resistor?

The board includes footprint space and routing for a low-side shunt resistor (not populated by default) to enable peak current-mode control in SMPS or overcurrent protection in motor drives. When installed, it interfaces with the STDRIVEG600's current-sense input path (via SHUNT net), allowing real-time load current monitoring and cycle-by-cycle limiting.

How should EVSTDRIVEG600DM be powered safely?

Observe strict sequencing: apply VCC (J2 pin 1 or J6 pin 1) first, then HV bus (J1 pin 1). Power-down order reverses: remove HV bus before VCC. The board lacks galvanic isolation - all HV sections (J1, OUT, GND_P) are referenced to mains potential. Use insulated probes, non-conductive work surfaces, and PPE (gloves, safety glasses); never touch energized areas due to stored charge in C27 and thermal hazard.