STMicroelectronics EVSTGAP2GS

Overview

EVSTGAP2GS from STMicroelectronics is a half-bridge evaluation board designed to validate the STGAP2GS galvanically isolated single gate driver and its operation with SGT120R65AL 650 V, 75 mΩ e-mode GaN transistors. It supports high-voltage rails up to 650 V, delivers ±6 V / –3 V negative gate driving, integrates dual isolated DC-DC converters (5.2 kV isolation), and enables independent turn-on/turn-off optimization via external gate resistors.

For engineers reviewing the EVSTGAP2GS datasheet, EVSTGAP2GS pinout, EVSTGAP2GS application, or EVSTGAP2GS equivalent, this board provides hands-on validation of GaN-specific UVLO thresholds, 45 ns input-output propagation delay, 2 A/3 A source/sink drive capability, TTL/CMOS-compatible inputs with hysteresis, and hardware interlock protection for cross-conduction prevention in motor inverter and power conversion designs.

Technical Context

The EVSTGAP2GS implements a functional half-bridge topology using two STGAP2GS SO-8W gate drivers - one per switch leg - each driving an SGT120R65AL PowerFLAT 5x6 mm GaN FET. The board incorporates dedicated dead-time generation circuitry using 74LVC1G86 XOR gates and 74LVC1G17 Schmitt buffers to enforce safe switching sequencing between high-side and low-side outputs.

On-board MGJ2D051509SC isolated DC-DC converters supply ±15 V gate drive rails with 5.2 kV reinforced isolation, fed from a single 5 V VAUX input. Logic-level supply is selectable between 3.3 V and 5 V, and gate-driving voltage configuration (e.g., +6/0 V or +6/–3 V) is jumper-controlled to match e-GaN transistor requirements.

Key Specifications

Availability

EVSTGAP2GS is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and high-efficiency AC-DC converters requiring stable component supply, rapid prototyping support, and GaN gate driver validation under real-world conditions.

Supply support for EVSTGAP2GS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer applications.

The EVSTGAP2GS belongs to ST's GaN ecosystem evaluation platform series, engineered to accelerate adoption of enhancement-mode GaN transistors in high-frequency, high-efficiency power conversion systems by providing fully characterized, ready-to-run reference hardware.

FAQ

What GaN transistors are supported on the EVSTGAP2GS board?

The EVSTGAP2GS board is specifically configured for the SGT120R65AL - a 650 V, 75 mΩ e-mode GaN transistor in PowerFLAT 5x6 mm package. Its gate drive characteristics, UVLO threshold, and negative turn-off voltage requirements are matched to this device. Other GaN FETs may be substituted only after verifying pin compatibility, threshold voltage, and gate charge requirements against the STGAP2GS driver specifications.

Can the EVSTGAP2GS operate with a 1200 V rail as stated in the device description?

No - while the underlying STGAP2GS gate driver IC supports up to 1200 V high-side floating operation, the EVSTGAP2GS evaluation board is rated for 650 V maximum due to PCB layout, capacitor voltage ratings (C1/C2: 630 V), and SGT120R65AL FET limitations. Operating above 650 V violates board safety margins and risks component failure.

How is hardware interlock implemented on this board?

Hardware interlock is realized using dual 74LVC1G86 XOR gates and 74LVC1G17 Schmitt buffers that condition PWMH and PWML signals. When both inputs go active simultaneously, the logic forces complementary outputs to prevent concurrent high-side and low-side conduction. This function remains active independent of the host controller, mitigating shoot-through during firmware crashes or timing errors.

Does the board support external gate resistor customization?

Yes - the EVSTGAP2GS provides accessible solder pads and test points (e.g., TP5, TP8) adjacent to each STGAP2GS GON/GOFF pins, allowing direct insertion of discrete gate resistors. This enables empirical tuning of dV/dt, switching losses, and EMI behavior without modifying the core driver layout or compromising isolation integrity.