STMicroelectronics EVSTGAP2SICSNC

Overview

EVSTGAP2SICSNC from STMicroelectronics is a half-bridge evaluation board designed to validate the STGAP2SICSNC isolated single-channel gate driver for silicon carbide MOSFETs. It supports up to 520 V DC bus voltage, integrates dual isolated DC-DC converters (5.2 kV isolation), delivers ±17 V or ±19 V gate drive with negative turn-off capability, and features 4 A peak source/sink current and 75 ns propagation delay - enabling robust SiC inverter testing in industrial motor drives.

For engineers reviewing the EVSTGAP2SICSNC datasheet, EVSTGAP2SICSNC pinout, EVSTGAP2SICSNC application, or EVSTGAP2SICSNC equivalent, this board provides full access to STGAP2SICSNC's Miller clamp, UVLO, thermal shutdown, TTL/CMOS-compatible inputs with hysteresis, and configurable driving voltage modes - all critical for evaluating high-reliability SiC gate driving under fast-switching conditions.

Technical Context

The board implements a functional half-bridge topology using two SCTH35N65G2V 650 V / 55 mΩ SiC MOSFETs in H2PAK-7 packages, driven by two STGAP2SICSNC SO-8 ICs - each providing galvanic isolation, rail-to-rail outputs, and dedicated high-side/low-side gate supply via Murata MGJ2D051509SC DC-DC converters.

It supports jumper-selectable gate drive configurations (+17/0 V, +17/−3 V, +19/0 V, +19/−3 V), includes on-board 33 nF/1.25 kV film bus capacitor (C29), and provides accessible test points (TP1–TP17), screw terminals (J1), and header connectors (J2–J4) for real-time signal probing, bus voltage scaling, and controller interface validation.

Key Specifications

Availability

EVSTGAP2SICSNC is available at Aetrix Electronics and suitable for industrial motor drives, SiC-based solar inverters, and high-efficiency UPS systems requiring stable component supply and rapid prototyping support.

Supply support for EVSTGAP2SICSNC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

This board belongs to ST's Power Application Evaluation Kit product line, engineered specifically to accelerate development of wide-bandgap-based power conversion systems with validated gate driving, protection, and layout practices.

FAQ

Can EVSTGAP2SICSNC drive IGBTs or only SiC MOSFETs?

No - EVSTGAP2SICSNC is optimized exclusively for silicon carbide MOSFETs. Its gate drive voltage range (+17/−3 V), Miller clamp function, and fast 75 ns propagation delay match SiC device requirements. Driving IGBTs would require higher gate charge current and different UVLO thresholds not validated on this board.

What is the maximum bus voltage achievable after modifying C29 and power switches?

With replacement of C29 (33 nF/1.25 kV) and Q1/Q2 with higher-voltage SiC MOSFETs in H2PAK-7 or H2PAK-2L packages - such as 1200 V-rated devices - the board can support bus voltages up to 800 V DC, subject to creepage/clearance verification and derating of onboard capacitors and resistors per IEC 61800-5-1.

Does the board include hardware interlock functionality?

Yes - dual input pins (IN+ and IN− per channel) enable hardware interlocking. When configured with complementary logic signals, the STGAP2SICSNC IC prevents simultaneous high-side and low-side conduction, eliminating shoot-through risk even during microcontroller failure or timing skew.

How is the 3.3 V logic supply generated?

The 3.3 V VDD logic supply is generated onboard via a dedicated LDO or DC-DC stage fed from VAUX (5 V), as confirmed in the schematic (Figure 2). This supply powers internal logic, input buffers, and level shifters - independent of the isolated gate driver supplies (VH_H/VH_L).