Diodes Incorporated FCX495TC

Overview

FCX495TC from Diodes Incorporated is a 150V NPN high-voltage transistor in SOT89 package, rated for 1A continuous collector current and featuring V_CE(sat) < 300mV at 500mA, BV_CEO = 150V, and f_T = 100MHz. It serves as a low-loss power switch in DC-DC converters, LED drivers, and industrial control circuits requiring robust voltage handling and thermal efficiency.

For engineers reviewing the FCX495TC datasheet, FCX495TC pinout, FCX495TC application, or FCX495TC equivalent, key selection criteria include its 150V V_CEO, 1A I_C, SOT89 thermal performance (R_θJL = 10.01°C/W), and automotive-grade variant availability (FCX495Q).

Technical Context

This NPN bipolar junction transistor operates with a minimum h_FE of 100 at I_C = 1mA and maintains gain up to 300 at I_C = 1A under V_CE = 10V. Its safe operating area supports pulsed currents up to 2A and DC operation within 1W power dissipation limits on standard FR4 PCBs.

The device uses a lead-free, halogen-free "Green" molding compound (UL 94V-0), with matte tin-plated leads solderable per MIL-STD-202, Method 208. Junction-to-lead thermal resistance of 10.01°C/W enables efficient heat transfer through the exposed collector pad in SOT89.

Key Specifications

Pinout & Package

SOT89 package with molded plastic body, UL 94V-0 rating, and exposed collector pad for thermal conduction. Weight: 0.052g. Moisture sensitivity level: J-STD-020 Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN transistor applications.

Compared with ZTX653 and MJD127, FCX495TC delivers superior voltage margin (150V), lower conduction loss, and better thermal performance in compact SOT89-making it optimal for space-constrained, high-efficiency 48–120V industrial and automotive auxiliary power designs.

Availability

FCX495TC is available at Aetrix Electronics and suitable for LED driver circuits, industrial power supplies, automotive body control modules, and AC-DC auxiliary power designs requiring stable component supply and long-term manufacturability.

Supply support for FCX495TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The FCX495TC belongs to Diodes' high-voltage bipolar transistor product line, engineered for robust, cost-effective power switching in industrial, automotive, and lighting applications where reliability and thermal efficiency are critical.

FAQ

What is the maximum continuous collector current for FCX495TC?

The FCX495TC is rated for 1A continuous collector current at T_A = +25°C with proper PCB thermal design. Derating applies above 25°C ambient: power dissipation drops linearly to zero at +150°C case temperature, per the 1W P_D rating and 125°C/W R_θJA.

Is FCX495TC suitable for automotive applications?

Yes-the automotive-qualified variant FCX495Q is explicitly designed for AEC-Q101 compliance and operates across –40°C to +150°C. While FCX495TC shares identical electrical specs and package, it is not certified for automotive use; designers requiring qualification must specify FCX495Q.

How does the SOT89 package improve thermal performance?

The SOT89 exposes the collector terminal as a large metal pad on the underside, providing a direct thermal path to the PCB. With R_θJL = 10.01°C/W, heat transfers efficiently to internal or external copper planes-unlike TO-92 or SOT23-enabling higher power density without external heatsinks.

What base drive current is required for full saturation at 500mA collector current?

At I_C = 500mA, the datasheet specifies V_CE(sat) ≤ 300mV with I_B = 50mA. This corresponds to h_FE ≥ 10 under saturation conditions. A 50mA base drive ensures low-loss switching; designers should verify GPIO or driver capability supports this current with ≤1.0V V_BE(sat).