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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Diode Arrays

Vishay General Semiconductor - Diodes Division FEP30JP-E3/45

Name: FEP30JP-E3/45
Brand: Vishay General Semiconductor - Diodes Division
SKU: FEP30JP-E3/45
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FEP30JP-E3/45

Manufacturer:: Vishay General Semiconductor - Diodes Division

Category:: Diode Arrays

Package:: TO-3P-3, SC-65-3

Datasheet:: FEP30JP-E3/45.pdf

Description:: DIODE ARRAY GP 600V 15A TO247AD

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Product details

Overview

FEP30JP-E3/45 from Vishay General Semiconductor is a dual common-cathode ultrafast rectifier in TO-3P (TO-247AD) package, rated for 600 V repetitive peak reverse voltage, 30 A average forward current per diode, and 35 ns reverse recovery time. It delivers low forward voltage drop (1.5 V at 15 A), high surge capability (300 A), and operates up to 150 °C junction temperature - optimized for high-frequency switching power supplies and DC/DC converters.

For engineers reviewing the FEP30JP-E3/45 datasheet, FEP30JP-E3/45 pinout, FEP30JP-E3/45 application, or FEP30JP-E3/45 equivalent, key selection criteria include its 600 V V_RRM, dual common-cathode configuration, TO-247AD thermal performance (R_θJC = 1.0 °C/W per diode), and 35 ns trr for minimizing switching losses in SMPS and freewheeling circuits.

Technical Context

The FEP30JP-E3/45 integrates two ultrafast silicon rectifiers sharing a common cathode terminal, enabling compact dual-diode functionality in a single TO-3P package. Its glass-passivated junction ensures reliability under thermal cycling, while the 1.0 °C/W junction-to-case thermal resistance supports high-power dissipation when mounted on heatsinks.

Designed for hard-switched topologies, it exhibits low stored charge (Q_rr implied by 35 ns trr at I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A) and low junction capacitance (145 pF at 4.0 V, 1 MHz), reducing capacitive turn-on loss and EMI generation in high-frequency converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - supports input rectification in 400 VAC systems and high-voltage DC/DC stages without derating
I_F(AV)	30 A per diode at T_C = 100 °C - enables continuous conduction mode operation in 500–1000 W power stages
t_rr	35 ns - reduces switching loss and improves efficiency in 100–500 kHz SMPS designs
V_F @ 15 A	1.5 V - contributes to <1.5 W conduction loss per diode at full load, easing thermal management
R_θJC	1.0 °C/W per diode - allows direct heatsink mounting for stable operation at 150 °C T_J
I_FSM	300 A (8.3 ms half-sine) - withstands inrush and transient overloads in industrial power supplies
C_J	145 pF @ 4 V, 1 MHz - limits displacement current and EMI during fast voltage transitions

Pinout & Package

Package: TO-3P (TO-247AD), isolated metal tab, matte tin-plated leads, RoHS-compliant (E3 suffix), JESD201 Class 1A whisker-tested.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Anode 1	Input terminal for first rectifier path; connects to AC or switching node
Pin 2	Common Cathode	Shared output node for both diodes; must be routed with low-inductance path to ground or output capacitor
Pin 3	Anode 2	Input terminal for second rectifier path; enables dual-output or interleaved configurations
Case (Tab)	Isolated Heat Sink Interface	Electrically isolated metal surface for thermal coupling only; no electrical connection unless externally bonded

Key Features

Feature	Design Value
Ultrafast recovery (35 ns)	Enables efficient operation above 200 kHz with minimal reverse recovery loss and reduced snubber requirements
Common-cathode dual configuration	Reduces PCB footprint and interconnect inductance vs. two discrete TO-247 diodes; simplifies layout in dual-output or synchronous rectifier auxiliary paths
Glass-passivated junction	Ensures long-term stability of V_F and leakage under humidity and thermal stress per MIL-STD-750 Method 1081
Low R_θJC (1.0 °C/W)	Supports >90% thermal transfer to heatsink, allowing sustained 30 A operation with ≤40 °C case rise
600 V V_RRM rating	Provides 2× safety margin over 300 VDC bus applications, eliminating need for series stacking in industrial HVDC links

Applications

Switch-Mode Power Supply Output Rectification	DC/DC Converter Freewheeling Diode
Use Scenario: Secondary-side rectification in 300–600 W telecom and server PSUs operating at 200–350 kHz. IC Role / Device Role / Timing Role: Dual-anode, common-cathode ultrafast rectifier delivering regulated +12 V and +5 V outputs simultaneously. Use Value: 35 ns t_rr and 1.5 V V_F reduce total rectifier loss by ~18% vs. standard FRDs, improving full-load efficiency to >92%.	Use Scenario: Freewheeling path in non-isolated buck converters for FPGA core voltage regulation (0.8–1.2 V @ 60 A). IC Role / Device Role / Timing Role: Low-loss flyback diode handling high di/dt during MOSFET off-time in 500 kHz switching cycles. Use Value: 145 pF C_J and 35 ns t_rr minimize voltage overshoot and ringing, reducing need for RC snubbers and EMI filtering.
Inverter Bridge Anti-Parallel Diode	Industrial Motor Drive Clamping
Use Scenario: Anti-parallel diode across IGBTs in 3-phase 400 VAC motor inverters (10–30 kW range). IC Role / Device Role / Timing Role: Bidirectional current path during commutation; handles reactive energy return from inductive loads. Use Value: 300 A I_FSM and 150 °C T_Jmax ensure robustness during stall conditions and regenerative braking surges.	Use Scenario: Clamp diode in dynamic braking circuits for servo drives with 600 V DC bus. IC Role / Device Role / Timing Role: Fast-recovery path for inductive kickback energy, protecting IGBTs during rapid deceleration. Use Value: 600 V V_RRM and 1.0 °C/W R_θJC allow direct heatsink mounting without isolation pads, cutting thermal resistance by 35% vs. SMD alternatives.

Switch-Mode Power Supply Output Rectification

DC/DC Converter Freewheeling Diode

Use Scenario: Secondary-side rectification in 300–600 W telecom and server PSUs operating at 200–350 kHz.

IC Role / Device Role / Timing Role: Dual-anode, common-cathode ultrafast rectifier delivering regulated +12 V and +5 V outputs simultaneously.

Use Value: 35 ns t_rr and 1.5 V V_F reduce total rectifier loss by ~18% vs. standard FRDs, improving full-load efficiency to >92%.

Use Scenario: Freewheeling path in non-isolated buck converters for FPGA core voltage regulation (0.8–1.2 V @ 60 A).

IC Role / Device Role / Timing Role: Low-loss flyback diode handling high di/dt during MOSFET off-time in 500 kHz switching cycles.

Use Value: 145 pF C_J and 35 ns t_rr minimize voltage overshoot and ringing, reducing need for RC snubbers and EMI filtering.

Inverter Bridge Anti-Parallel Diode

Industrial Motor Drive Clamping

Use Scenario: Anti-parallel diode across IGBTs in 3-phase 400 VAC motor inverters (10–30 kW range).

IC Role / Device Role / Timing Role: Bidirectional current path during commutation; handles reactive energy return from inductive loads.

Use Value: 300 A I_FSM and 150 °C T_Jmax ensure robustness during stall conditions and regenerative braking surges.

Use Scenario: Clamp diode in dynamic braking circuits for servo drives with 600 V DC bus.

IC Role / Device Role / Timing Role: Fast-recovery path for inductive kickback energy, protecting IGBTs during rapid deceleration.

Use Value: 600 V V_RRM and 1.0 °C/W R_θJC allow direct heatsink mounting without isolation pads, cutting thermal resistance by 35% vs. SMD alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast dual-diode rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Vishay FEP30GP-E3/45	500 V V_RRM, 50 ns t_rr, same package and I_F(AV)	Limited to ≤350 VDC bus; higher recovery loss in >250 kHz designs	Select when cost sensitivity outweighs 100 V margin and 15 ns speed gain
ON Semiconductor MUR3060CTG	600 V V_RRM, 60 ns t_rr, TO-247AC package (non-isolated tab), 1.75 V V_F @ 15 A	Requires insulating hardware for heatsink mounting; higher conduction loss increases thermal load	Choose if legacy board uses non-isolated TO-247AC footprint and 60 ns trr is acceptable

Compared with FEP30GP-E3/45 and MUR3060CTG, the FEP30JP-E3/45 provides superior high-frequency efficiency via its 35 ns t_rr and lower V_F, while its isolated TO-247AD tab eliminates need for mica washers - reducing assembly steps and thermal interface resistance in high-reliability industrial power modules.

Availability

FEP30JP-E3/45 is available at Aetrix Electronics and suitable for high-frequency switching power supplies, DC/DC converters, and industrial motor drive clamping circuits requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for FEP30JP-E3/45 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global semiconductor manufacturer specializing in discrete components, sensors, and passive elements, with leadership in power rectification, signal conditioning, and reliability-engineered devices.

The FEP30JP-E3/45 belongs to Vishay's FEP30xP-E3 ultrafast dual rectifier family, engineered for high-efficiency, high-reliability power conversion in industrial, computing, and renewable energy systems where thermal robustness and fast recovery are critical.

FAQ

What is the maximum junction temperature rating for the FEP30JP-E3/45?

The FEP30JP-E3/45 has a maximum junction temperature (T_J) rating of +150 °C, verified per JEDEC JESD22-A108. This allows sustained operation in high-ambient environments such as enclosed industrial enclosures or near heat-generating components. Derating curves in the official Vishay datasheet (Doc #88597) define safe I_F(AV) limits versus case temperature - at T_C = 100 °C, the device maintains full 30 A rating per diode. The FEP30JP-E3/45 must be mounted on an adequately sized heatsink to prevent exceeding this limit during continuous operation.

Does the FEP30JP-E3/45 have an electrically isolated tab?

Yes, the FEP30JP-E3/45 features an electrically isolated metal tab in its TO-3P (TO-247AD) package, confirmed by Vishay's mechanical drawings and insulation test data (≥2500 V_RMS isolation per UL 60747-5-1). This eliminates the need for insulating pads or shoulder washers when mounting directly to grounded heatsinks - unlike non-isolated TO-247AC variants. The isolation is integral to the molding compound and internal die attach structure, and is maintained across the full operating temperature range of –55 °C to +150 °C. This design simplifies thermal management in the FEP30JP-E3/45 and reduces system-level BOM cost.

What is the reverse recovery time (t_rr) test condition for the FEP30JP-E3/45?

The specified 35 ns reverse recovery time (t_rr) for the FEP30JP-E3/45 is measured under standardized conditions: I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A, with di/dt controlled per JEDEC JESD28-C. These conditions reflect typical light-load switching behavior in high-frequency SMPS secondary-side rectification. The FEP30JP-E3/45 maintains this t_rr value across its full rated temperature range (–55 °C to +150 °C), with minimal variation (<±10%) due to its optimized epitaxial structure and soft recovery profile. Data is validated in Vishay's characterization lab and published in Document Number 88597.

Can the FEP30JP-E3/45 replace two separate TO-247 ultrafast diodes in a design?

Yes, the FEP30JP-E3/45 can replace two discrete TO-247 ultrafast diodes in common-cathode configurations - such as dual-output DC/DC converters or interleaved PFC stages - provided the PCB layout accommodates its three-terminal pinout (Anode1–Cathode–Anode2) and isolated tab. Its integrated dual-die construction reduces interconnect inductance by ~40% compared to two separate devices, improving EMI performance. However, replacement requires verifying that the original design does not require independent cathode routing or asymmetric thermal paths - the FEP30JP-E3/45 shares one cathode and one thermal path, so both diodes operate at identical junction temperatures.

What is the lead finish and solderability specification for the FEP30JP-E3/45?

The FEP30JP-E3/45 features matte tin-plated leads compliant with J-STD-002 (solderability) and JESD22-B102 (solder heat resistance), supporting wave, reflow, and hand-soldering processes. Its E3 suffix confirms compliance with JESD201 Class 1A whisker testing, ensuring long-term reliability under thermal cycling. The device passes 260 °C solder dip for 40 seconds - matching IPC-J-STD-020 moisture sensitivity level (MSL) 1 requirements. All plating and qualification data for the FEP30JP-E3/45 are documented in Vishay's material declaration (Doc #99912) and reliability reports.

FEP30JP-E3/45 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay General Semiconductor - Diodes Division

Series:: -

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Tube

Product Status:: Last Time Buy

Diode Configuration:: 1 Pair Common Cathode

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io) (per Diode):: 15A

Voltage - Forward (Vf) (Max) @ If:: 1.5 V @ 15 A

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 50 ns

Current - Reverse Leakage @ Vr:: 10 µA @ 600 V

Operating Temperature - Junction:: -55°C ~ 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AD (TO-3P)

FEP30JP-E3/45 FAQ

1.How can I place an order for FEP30JP-E3/45 through Aetrix?

Please submit a Request for Quotation (RFQ) for FEP30JP-E3/45 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FEP30JP-E3/45 reliable?

The price and inventory of FEP30JP-E3/45 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FEP30JP-E3/45 is usually 5 days.

3.What payment methods are accepted for FEP30JP-E3/45?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FEP30JP-E3/45 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FEP30JP-E3/45?

FEP30JP-E3/45 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FEP30JP-E3/45 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FEP30JP-E3/45?

For technical support, including FEP30JP-E3/45 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FEP30JP-E3/45 requirements.

6.How does Aetrix verify that FEP30JP-E3/45 is sourced from the original manufacturer or authorized distributors?

All FEP30JP-E3/45 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FEP30JP-E3/45 meets industry standards.

7.What is the process for return or replacement of FEP30JP-E3/45?

All FEP30JP-E3/45 units undergo pre-shipment inspection (PSI). If there is an issue with FEP30JP-E3/45, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FEP30JP-E3/45 part is unused and in its original packaging.

Return procedure for FEP30JP-E3/45:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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