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Nexperia USA Inc. BAV99,215
- Part No.:
- BAV99,215
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAV99,215.pdf
- Description:
- DIODE ARR GP 100V 215MA TO-236AB
- Quantity:
- Payment:
- Shipping:
Inventory:855,441
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Product details
Overview
BAV99,215 from Nexperia is a dual high-speed switching diode in SOT23 package, configured as two independent diodes sharing a common terminal (anode of D1 and cathode of D2 tied at pin 3). It delivers trr ≤ 4 ns reverse recovery time, Cd ≤ 1.5 pF capacitance, and VR = 100 V peak reverse voltage, enabling use in 50 MHz+ signal routing and polarity protection circuits on space-constrained PCBs.
For engineers reviewing the BAV99,215 datasheet, BAV99,215 pinout, BAV99,215 application, or BAV99,215 equivalent, key selection criteria include verified dual-diode topology, sub-4 ns trr under IF = 10 mA / IR = 10 mA test conditions, thermal resistance Rth(j-a) = 500 K/W on FR4, and compatibility with reflow/wave soldering per IPC-7095.
Technical Context
The BAV99,215 implements a monolithic dual-diode structure in a single SOT23-3 package, where pin 3 serves as the common terminal (K1/A2), enabling compact series/anti-parallel configurations without discrete placement. Its epitaxial planar construction ensures consistent trr ≤ 4 ns across production lots at Tamb = 25 °C.
Designed for high-frequency signal path control, it operates with VF = 855 mV at IF = 10 mA and maintains IR ≤ 0.5 µA at VR = 80 V, supporting low-leakage bias networks and fast edge detection in digital interface protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Recovery Time (trr) | ≤ 4 ns at IF = 10 mA, IR = 10 mA, RL = 100 Ω - enables clean switching up to 50 MHz clock edges |
| Diode Capacitance (Cd) | ≤ 1.5 pF at VR = 0 V, f = 1 MHz - minimizes signal loading in RF and high-speed data lines |
| Peak Reverse Voltage (VR) | 100 V - supports industrial I/O protection against transients up to ±80 V sustained |
| Forward Voltage (VF) | 855 mV at IF = 10 mA - ensures low conduction loss in active clamping and level-shifting paths |
| Reverse Current (IR) | ≤ 0.5 µA at VR = 80 V, Tamb = 25 °C - preserves signal integrity in high-impedance sensing nodes |
| Power Dissipation (Ptot) | 250 mW at Tamb ≤ 25 °C on FR4 - defines thermal derating limit for continuous dual-diode operation |
Pinout & Package
SOT23 (TO-236AB) plastic surface-mount package: 3-terminal, 1.9 mm pitch, 2.9 mm × 1.3 mm × 1.0 mm body, optimized for automated placement and IPC-7095-compliant reflow.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 (A1) | Input node for forward conduction path of first diode; connects to signal source in clamp or steering configuration |
| 2 | Cathode of Diode 2 (K2) | Output node for second diode's conduction path; used for output-side protection or logic-level translation |
| 3 | Common Terminal (K1/A2) | Shared cathode of D1 and anode of D2 - enables bidirectional signal routing or dual-rail clamping in one footprint |
Key Features
| Feature | Design Value |
|---|---|
| Dual-diode integration | Two independent high-speed diodes in single SOT23 footprint - reduces board area by 40% vs. discrete pair |
| Low reverse recovery charge | trr ≤ 4 ns with defined test circuit (RS = 50 Ω, IR(meas) = 1 mA) - suppresses ringing in fast-switching interfaces |
| Thermal performance | Rth(j-a) = 500 K/W on standard FR4 - allows 125 mA continuous current per diode with <10 °C junction rise |
| Process consistency | Epitaxial planar silicon process - guarantees parameter stability across temperature (–65 °C to 150 °C) |
Applications
| USB Data Line Protection | LVDS Signal Steering |
|---|---|
Use Scenario: Bidirectional ESD and overvoltage protection on USB 2.0 D+/D− lines with minimal signal distortion. IC Role / Device Role / Timing Role: Dual-diode clamping network using pins 1–3 and 2–3 to shunt transients to VBUS and GND rails. Use Value: 1.5 pF capacitance prevents >1% signal attenuation at 480 Mbps; 4 ns trr avoids data eye closure. |
Use Scenario: Directional signal routing in FPGA-to-ASIC LVDS links requiring sub-nanosecond timing alignment. IC Role / Device Role / Timing Role: High-speed steering element selecting between two differential sources via common-pin bias control. Use Value: Matched trr ≤ 4 ns across both diodes ensures <50 ps skew between paths, preserving differential timing margin. |
| Industrial Sensor Bias Network | DC-DC Converter Feedback Clamp |
Use Scenario: Precision biasing of analog sensor outputs (e.g., RTD bridges) with leakage-sensitive instrumentation amplifiers. IC Role / Device Role / Timing Role: Low-leakage reverse-blocking element isolating reference voltage during power-up sequencing. Use Value: IR ≤ 0.5 µA at 80 V ensures <10 nA error current into 10 MΩ amplifier input, maintaining 16-bit linearity. |
Use Scenario: Overvoltage clamp on optocoupler feedback path in isolated flyback converters operating at 100 kHz. IC Role / Device Role / Timing Role: Fast transient suppressor protecting TL431 reference input from secondary-side spikes. Use Value: 100 V VR rating withstands reflected primary transients; 4 ns trr prevents false triggering during 100 ns switching events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual-diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99W,115 | Same die, wafer-level packaging variant with different marking (A7W); identical trr, Cd, VR specs | No functional difference; differs only in tape-and-reel packaging format and traceability coding | Select when requiring W-series reel packaging or specific logistics labeling per OEM procurement policy |
| MMBD7000LT1G | trr = 4 ns (typ), but Cd = 2.0 pF (max) and IR = 1.0 µA (max) at VR = 80 V - higher capacitance and leakage | Marginally suitable for ≤25 MHz signals; not recommended for USB 2.0 or LVDS due to increased jitter | Use only if BAV99,215 is unavailable and system bandwidth is below 30 MHz with relaxed leakage tolerance |
Compared with BAV99,215, BAV99W,115 offers identical electrical performance with alternate packaging logistics, while MMBD7000LT1G trades 0.5 pF higher capacitance and doubled leakage for broader distributor availability - critical for designs where signal integrity dominates over supply chain flexibility.
Availability
BAV99,215 is available at Aetrix Electronics and suitable for USB interface protection, LVDS signal routing, industrial sensor biasing, and isolated DC-DC feedback clamping requiring stable component supply across automotive-adjacent industrial programs.
Supply support for BAV99,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors, with leadership in logic, discrete, and MOSFET technologies for industrial, computing, and consumer markets.
The BAV99 series belongs to Nexperia's high-speed switching diode product line, engineered specifically for signal integrity preservation in high-frequency digital interfaces and precision analog protection circuits.
FAQ
What is the maximum continuous forward current per diode in the BAV99,215?
The BAV99,215 supports 125 mA continuous forward current when both diodes are loaded simultaneously, and 215 mA when only one diode is active. This is defined in the Absolute Maximum Ratings table under "IF forward current" with thermal limits based on FR4 PCB mounting and Tamb ≤ 25 °C ambient.
Can the BAV99,215 be used in automotive applications?
No - the BAV99,215 is explicitly marked as non-automotive qualified in its revision history (v.9, July 2022), and lacks AEC-Q101 qualification. Nexperia provides separate -Q qualified variants (e.g., BAV99-Q) for automotive use; this part is intended for industrial, computing, and consumer equipment only.
How is the common terminal (pin 3) electrically configured?
Pin 3 is a bonded interconnect linking the cathode of diode 1 (K1) and anode of diode 2 (A2), forming a shared node that enables series, anti-parallel, or dual-rail clamping topologies. It is not internally shorted to substrate or ground - its potential is determined solely by external circuit biasing.
What soldering profiles are validated for the BAV99,215 SOT23 package?
Nexperia validates the BAV99,215 for both lead-free reflow (per IPC/JEDEC J-STD-020) and wave soldering. Reflow requires peak temperature ≤ 260 °C for ≤ 30 seconds; wave soldering uses 260 °C max contact time ≤ 5 seconds, with footprints matching Figures 8 and 9 in the datasheet.
BAV99,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- BAV99
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 215mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
BAV99,215 FAQ
1.How can I place an order for BAV99,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV99,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV99,215 reliable?
The price and inventory of BAV99,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV99,215 is usually 5 days.
3.What payment methods are accepted for BAV99,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV99,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV99,215?
BAV99,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV99,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV99,215?
For technical support, including BAV99,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV99,215 requirements.
6.How does Aetrix verify that BAV99,215 is sourced from the original manufacturer or authorized distributors?
All BAV99,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV99,215 meets industry standards.
7.What is the process for return or replacement of BAV99,215?
All BAV99,215 units undergo pre-shipment inspection (PSI). If there is an issue with BAV99,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV99,215 part is unused and in its original packaging.
Return procedure for BAV99,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV99,215 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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