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Vishay General Semiconductor - Diodes Division FEPB16AT-E3/81
- Part No.:
- FEPB16AT-E3/81
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Diode Arrays
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
FEPB16AT-E3/81.pdf
- Description:
- DIODE ARRAY GP 50V 8A TO263AB
- Quantity:
- Payment:
- Shipping:
Inventory:9,034
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Product details
Overview
FEPB16AT-E3/81 from Vishay General Semiconductor is a dual common-cathode ultrafast plastic rectifier in D2PAK (TO-263AB) package, rated for 50 V repetitive peak reverse voltage, 8.0 A average forward current per diode, and 35 ns reverse recovery time. It delivers low forward voltage drop (0.95 V at 8.0 A), high surge capability (125 A IFSM), and operates up to 150 °C junction temperature - optimized for high-frequency switching power supplies and DC/DC converters.
For engineers reviewing the FEPB16AT-E3/81 datasheet, FEPB16AT-E3/81 pinout, FEPB16AT-E3/81 application, or FEPB16AT-E3/81 equivalent, key selection criteria include its dual common-cathode configuration, TO-263AB thermal performance (RθJC = 2.2 °C/W), AEC-Q101 qualification eligibility (via HM3 suffix), RoHS-compliant matte tin plating, and J-STD-020 MSL Level 1 rating.
Technical Context
This device integrates two ultrafast silicon diodes in a single D2PAK thermally enhanced surface-mount package with shared cathode connection. Its 35 ns trr and 0.95 V VF at 8.0 A enable high-efficiency operation in 100–500 kHz switching topologies, while the glass-passivated junction ensures stable performance under repetitive surge stress.
The dual common-cathode topology simplifies layout in center-tapped or synchronous rectification circuits, and the 2.2 °C/W junction-to-case thermal resistance supports direct heatsinking via the exposed cathode tab - critical for maintaining TJ ≤ 150 °C under sustained 16 A total device current (8 A per diode).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 50 V - Maximum repetitive reverse blocking voltage per diode; defines safe operating range in low-voltage DC/DC outputs. |
| IF(AV) per diode | 8.0 A at TC = 100 °C - Continuous forward current handling per diode; enables 16 A total conduction with shared thermal path. |
| trr | 35 ns - Ultrafast reverse recovery time; minimizes switching losses in high-frequency SMPS and reduces EMI generation. |
| VF | 0.95 V at IF = 8.0 A - Low forward voltage drop directly improves system efficiency and reduces heat dissipation per diode. |
| IFSM | 125 A - Non-repetitive peak surge current per diode (8.3 ms half-sine); withstands inrush and transient overloads without failure. |
| RθJC | 2.2 °C/W per diode - Thermal resistance from junction to case; enables effective heatsinking through the exposed cathode pad. |
| TJ max. | 150 °C - Maximum junction temperature; allows operation in demanding industrial and automotive ambient conditions. |
Pinout & Package
Package: D2PAK (TO-263AB), surface-mount, thermally enhanced with exposed cathode tab for heatsinking. Matte tin-plated terminals, J-STD-002 solderable, MSL Level 1 compliant (peak reflow 245 °C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Anode 1) | Anode of Diode 1 | Input terminal for first rectifying path; connects to AC or switching node in bridge/freewheeling configurations. |
| Pin 2 (Anode 2) | Anode of Diode 2 | Independent anode for second rectifying path; enables dual-output or interleaved operation without shared anode routing. |
| Pin 3 (Cathode) | Common Cathode | Shared output node for both diodes; large copper area serves as primary thermal interface and low-inductance return path. |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures long-term reliability and stable leakage current (<10 μA at 25 °C) under humidity and thermal cycling stress. |
| Ultrafast 35 ns recovery | Reduces reverse recovery charge (Qrr) and associated switching losses in 200–500 kHz converters, improving overall efficiency by ~1–2%. |
| Dual common-cathode topology | Eliminates need for external cathode tie, reducing PCB trace inductance and enabling compact, low-parasitic layouts for high-density power modules. |
| TO-263AB thermal design | Exposed cathode pad provides direct thermal path to PCB copper pour or heatsink, supporting >10 W continuous dissipation with proper board layout. |
| RoHS-compliant & halogen-free (E3) | Meets global environmental compliance requirements without compromising solderability or whisker resistance (JESD 201 Class 1A). |
Applications
| Switch-Mode Power Supply Output Rectification | DC/DC Converter Freewheeling Diode |
|---|---|
Use Scenario: Secondary-side rectification in 12 V or 24 V isolated flyback or forward converters operating at 200–350 kHz. IC Role / Device Role / Timing Role: Dual ultrafast rectifier providing low-loss, low-noise DC output with shared cathode return to transformer center tap or controller ground reference. Use Value: 0.95 V VF and 35 ns trr reduce conduction and switching losses, enabling >92% efficiency at full load and lower thermal footprint vs. standard FRDs. | Use Scenario: Freewheeling path in synchronous buck converters where body diode conduction must be minimized during dead-time. IC Role / Device Role / Timing Role: Fast-recovery clamp diode conducting only during MOSFET off-state; placed across low-side switch or inductor. Use Value: 35 ns trr prevents reverse recovery-induced shoot-through and limits voltage overshoot, improving gate driver robustness and EMI margin. |
| Inverter Auxiliary Power Supply | Industrial Motor Drive Snubber Network |
Use Scenario: Isolated auxiliary supply powering gate drivers and control logic in 3-phase IGBT inverters (e.g., HVAC or pump drives). IC Role / Device Role / Timing Role: Dual-output rectifier feeding independent +15 V and –5 V rails from center-tapped transformer secondary. Use Value: Common-cathode configuration simplifies dual-rail filtering and reduces component count versus discrete diodes; 150 °C TJ rating ensures reliability near hot power stages. | Use Scenario: RC snubber network across IGBT collector-emitter to suppress voltage spikes during turn-off in 10–20 kHz motor drives. IC Role / Device Role / Timing Role: Ultrafast clamping diode absorbing inductive energy and limiting dV/dt stress on switching devices. Use Value: 125 A IFSM and low CJ (60 pF) allow reliable energy absorption without oscillation or thermal runaway under repeated transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast dual-diode rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay FEPB16AT-M3/I | Identical electrical specs and package; halogen-free molding compound and JESD 201 Class 1A whisker rating (vs. E3's Class 1A). | No functional difference; selected when halogen-free compliance is mandated by OEM or regional regulation. | Direct material substitution where halogen-free requirement applies; same thermal and electrical behavior. |
| ON Semiconductor NDS352AP | Single-channel 50 V Schottky (not dual), VF = 0.45 V, but trr not applicable; RθJC = 3.5 °C/W in SO-8FL. | Limited to single-output, low-VF applications; unsuitable for dual-rail or shared-cathode topologies requiring matched diodes. | Only viable where dual-diode function is unnecessary and ultra-low VF outweighs recovery speed needs. |
Compared with FEPB16AT-E3/81, the FEPB16AT-M3/I offers identical performance with halogen-free compliance, while the NDS352AP trades dual functionality and ultrafast recovery for lower VF in single-diode roles - making FEPB16AT-E3/81 irreplaceable in common-cathode, high-frequency, dual-path designs.
Availability
FEPB16AT-E3/81 is available at Aetrix Electronics and suitable for high-frequency switching power supplies, DC/DC converters, and industrial motor drive auxiliary supplies requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for FEPB16AT-E3/81 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Intertechnology is a global semiconductor manufacturer specializing in discrete components, sensors, and passive elements, with leadership in power rectification, MOSFETs, and precision resistors.
The FEPB16xT series belongs to Vishay's ultrafast dual rectifier product line, engineered specifically for high-efficiency, high-density power conversion in commercial and automotive-grade systems where thermal performance and recovery speed are critical.
FAQ
What is the maximum junction temperature rating for FEPB16AT-E3/81?
The FEPB16AT-E3/81 has a maximum junction temperature (TJ max.) of 150 °C, verified per Vishay's thermal characterization and supported by its 2.2 °C/W junction-to-case resistance. This rating allows reliable operation in industrial environments where ambient temperatures reach 85 °C and PCB copper heatsinking is implemented. The FEPB16AT-E3/81 must be derated per the forward current derating curve above 100 °C case temperature to maintain safe TJ limits.
Is FEPB16AT-E3/81 AEC-Q101 qualified?
The FEPB16AT-E3/81 is not AEC-Q101 qualified; only the HM3-suffix variant (e.g., FEPB16ATHM3/I) carries AEC-Q101 qualification. The E3 suffix indicates RoHS-compliant commercial grade with JESD 201 Class 1A whisker resistance and MSL Level 1, but no automotive stress testing. For automotive applications requiring AEC-Q101, the FEPB16ATHM3/I is the designated qualified version of the FEPB16AT-E3/81.
What is the reverse recovery time (trr) of FEPB16AT-E3/81 and how is it measured?
The FEPB16AT-E3/81 has a maximum reverse recovery time (trr) of 35 ns, measured under IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A per Vishay Document Number 88596. This value reflects the time required for minority carriers to clear after forward conduction ceases, directly impacting switching loss and EMI in high-frequency converters. The FEPB16AT-E3/81 achieves this performance via optimized epitaxial layer doping and ultrafast carrier lifetime control.
Can FEPB16AT-E3/81 replace TO-220AB-packaged FEP16AT-E3/45 in the same PCB layout?
No, FEPB16AT-E3/81 cannot replace FEP16AT-E3/45 without PCB redesign. The FEPB16AT-E3/81 uses D2PAK (TO-263AB) surface-mount packaging with three gull-wing leads and an exposed cathode pad, while the FEP16AT-E3/45 uses through-hole TO-220AB with three vertical leads and a mounting hole. Their footprints, thermal interface methods, and mechanical mounting are incompatible. The FEPB16AT-E3/81 requires a dedicated SMT land pattern per Vishay's recommended mounting pad layout.
What is the typical junction capacitance (CJ) of FEPB16AT-E3/81 and why does it matter?
The typical junction capacitance (CJ) of FEPB16AT-E3/81 is 60 pF per diode at 4.0 V and 1 MHz. This parameter influences high-frequency impedance, snubber design, and EMI filter sizing - lower CJ reduces displacement current during fast voltage transitions, minimizing radiated emissions and gate drive loading in high-dV/dt applications. The FEPB16AT-E3/81's 60 pF value balances low capacitance with robust 50 V blocking capability.
FEPB16AT-E3/81 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io) (per Diode):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 950 mV @ 8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 35 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 50 V
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
FEPB16AT-E3/81 FAQ
1.How can I place an order for FEPB16AT-E3/81 through Aetrix?
Please submit a Request for Quotation (RFQ) for FEPB16AT-E3/81 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FEPB16AT-E3/81 reliable?
The price and inventory of FEPB16AT-E3/81 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FEPB16AT-E3/81 is usually 5 days.
3.What payment methods are accepted for FEPB16AT-E3/81?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FEPB16AT-E3/81 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FEPB16AT-E3/81?
FEPB16AT-E3/81 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FEPB16AT-E3/81 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FEPB16AT-E3/81?
For technical support, including FEPB16AT-E3/81 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FEPB16AT-E3/81 requirements.
6.How does Aetrix verify that FEPB16AT-E3/81 is sourced from the original manufacturer or authorized distributors?
All FEPB16AT-E3/81 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FEPB16AT-E3/81 meets industry standards.
7.What is the process for return or replacement of FEPB16AT-E3/81?
All FEPB16AT-E3/81 units undergo pre-shipment inspection (PSI). If there is an issue with FEPB16AT-E3/81, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FEPB16AT-E3/81 part is unused and in its original packaging.
Return procedure for FEPB16AT-E3/81:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FEPB16AT-E3/81 Tags
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BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
Diodes Incorporated
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BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
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BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
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BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
onsemi
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