Vishay General Semiconductor - Diodes Division FESB8CTHE3_A/I

Overview

FESB8CTHE3_A/I from Vishay General Semiconductor is an ultrafast plastic rectifier diode in TO-263AB (D2PAK) package, rated for 150 V repetitive peak reverse voltage (V_RRM), 8.0 A average forward current (I_F(AV)), and 35 ns reverse recovery time (t_rr). It serves as a high-efficiency freewheeling or output rectifier in DC-DC converters and switching power supplies operating at high frequency.

For engineers reviewing the FESB8CTHE3_A/I datasheet, FESB8CTHE3_A/I pinout, FESB8CTHE3_A/I application, or FESB8CTHE3_A/I equivalent, key selection criteria include its 150 V V_RRM, 0.95 V typical forward voltage at 8 A, 125 A non-repetitive surge rating, thermal resistance of 2.2 °C/W (junction-to-case), and RoHS-compliant, consumer-grade E3 suffix with JESD201 Class 1A whisker testing.

Technical Context

This device belongs to the FES(F,B)8xT family of ultrafast recovery rectifiers optimized for high-frequency switching applications. Its silicon die features glass passivation for reliability and achieves t_rr = 35 ns under I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A test conditions - enabling low switching losses in SMPS topologies.

The FESB8CTHE3_A/I uses a single-die configuration in TO-263AB with isolated heatsink tab (pin 2), supporting surface-mount assembly and direct thermal coupling to PCB copper. Its 150 V V_RRM and 150 °C maximum junction temperature allow operation in compact, thermally constrained 12–48 V output rails.

Key Specifications

Pinout & Package

Package: TO-263AB (D2PAK), surface-mount, isolated heatsink tab (pin 2). Matte tin-plated leads, UL 94V-0 epoxy, MSL Level 1 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with STTH8R06D and MUR860E, the FESB8CTHE3_A/I offers superior high-frequency efficiency due to its 35 ns t_rr and 0.95 V V_F, while its TO-263AB package enables higher power density and simplified thermal management in space-constrained SMT designs.

Availability

FESB8CTHE3_A/I is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, automotive body control modules, and telecom intermediate bus converters requiring stable component supply and consistent parametric performance across production batches.

Supply support for FESB8CTHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.

The FES(F,B)8xT series was designed for high-frequency power conversion systems demanding low-loss, fast-switching rectification in compact form factors - particularly targeting SMPS, inverters, and DC-DC applications where thermal and electrical performance are critical.

FAQ

What is the maximum junction temperature rating for the FESB8CTHE3_A/I?

The FESB8CTHE3_A/I has a maximum junction temperature (T_J) of +150 °C, as specified in the Vishay document 88600. This rating allows reliable operation in industrial and automotive environments where ambient temperatures may exceed 85 °C. The device's thermal resistance of 2.2 °C/W (junction-to-case) enables effective heat transfer to the PCB heatsink pad, helping maintain safe junction temperatures under full 8.0 A load at elevated case temperatures. Always verify actual T_J using measured case temperature and power dissipation in the final layout.

Does the FESB8CTHE3_A/I have RoHS and REACH compliance documentation?

Yes, the FESB8CTHE3_A/I is RoHS-compliant per Directive 2011/65/EU and meets WEEE 2002/96/EC requirements, as confirmed in Vishay document 88600. The "E3" suffix indicates consumer-grade qualification including JESD201 Class 1A whisker testing. Full material declarations and compliance certificates are available from Vishay upon request and are maintained in Aetrix Electronics' traceable sourcing records for all shipped FESB8CTHE3_A/I lots.

What is the reverse recovery time (t_rr) test condition for the FESB8CTHE3_A/I?

The FESB8CTHE3_A/I reverse recovery time is specified as 35 ns under the standardized test condition: I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A, with measurement performed at T_C = 25 °C. This value applies specifically to the FESB8CT variant (150 V V_RRM) within the FES(F,B)8xT family. The 35 ns t_rr is confirmed in Table 2 of Vishay document 88600 and reflects true ultrafast behavior suitable for 200–500 kHz switching frequencies.

Can the FESB8CTHE3_A/I be used as a drop-in replacement for the FES8CT-E3/45 in TO-220AC?

No - the FESB8CTHE3_A/I is not a drop-in replacement for FES8CT-E3/45. While both share identical electrical ratings (150 V V_RRM, 8 A I_F(AV), 35 ns t_rr), they differ fundamentally in package: FESB8CTHE3_A/I uses TO-263AB (SMT), whereas FES8CT-E3/45 uses TO-220AC (through-hole). Pinout, thermal path, and PCB footprint are incompatible. Migration requires layout revision, requalification of thermal performance, and verification of solder profile compatibility.

What is the typical junction capacitance (C_J) of the FESB8CTHE3_A/I and how does it affect high-frequency performance?

The FESB8CTHE3_A/I has a typical junction capacitance (C_J) of 85 pF at 4.0 V and 1 MHz, as stated in Vishay document 88600. This relatively low C_J minimizes displacement current during voltage transitions, reducing EMI generation and gate-drive loading in high-frequency circuits. In practice, this supports clean turn-off behavior and predictable snubber design in 300–500 kHz DC-DC converters - especially when paired with its 35 ns t_rr for minimal reverse recovery overshoot.