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Vishay General Semiconductor - Diodes Division FESB8GTHE3_A/P
- Part No.:
- FESB8GTHE3_A/P
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
FESB8GTHE3_A/P.pdf
- Description:
- DIODE GEN PURP 400V 8A TO263AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,644
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Product details
Overview
FESB8GTHE3_A/P from Vishay General Semiconductor is an ultrafast plastic rectifier diode in TO-263AB (D2PAK) package, rated for 400 V repetitive peak reverse voltage (VRRM), 8.0 A average forward current (IF(AV)), and 35 ns reverse recovery time (trr). It serves as a high-efficiency freewheeling or output rectifier in switching-mode power supplies operating at 100–500 kHz.
For engineers reviewing the FESB8GTHE3_A/P datasheet, FESB8GTHE3_A/P pinout, FESB8GTHE3_A/P application, or FESB8GTHE3_A/P equivalent, key selection criteria include its 35 ns trr, 1.30 V forward voltage at 8.0 A, 125 A non-repetitive surge rating, RoHS-compliant matte tin-plated terminals, and JESD201 Class 1A whisker-tested consumer-grade construction.
Technical Context
This device belongs to Vishay's FES(F,B)8xT family of ultrafast recovery rectifiers optimized for high-frequency power conversion. Its silicon junction is glass passivated for reliability, and it achieves low switching losses via controlled carrier lifetime reduction-evidenced by trr = 35 ns at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
The FESB8GTHE3_A/P uses a single-die planar structure with cathode (Pin 2) and anode (Pin 1) terminals configured for surface-mount heatsink attachment. Thermal resistance from junction to case is 2.2 °C/W, enabling operation up to TJ = 150 °C when mounted on a minimum 0.33" × 0.42" copper pad per TO-263AB footprint guidelines.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 400 V - supports DC bus voltages up to 280 V RMS in SMPS output stages |
| IF(AV) | 8.0 A at TC = 100 °C - requires heatsinking for continuous conduction mode operation |
| trr | 35 ns - enables efficient operation in 100–500 kHz converters with minimal switching loss |
| VF | 1.30 V at 8.0 A - contributes to <92 % efficiency in 12 V/50 A secondary-side rectification |
| IFSM | 125 A - withstands 8.3 ms half-sine surges during startup or overload transients |
| TJ max. | 150 °C - allows use in industrial ambient environments up to 85 °C with proper thermal design |
| CJ | 50 pF at 4.0 V - limits capacitive turn-on loss and EMI generation in hard-switched topologies |
Pinout & Package
Package: TO-263AB (D2PAK), surface-mount with isolated heatsink tab (Pin 2 = Cathode, Pin 1 = Anode). Mounting requires soldering the exposed metal tab to a thermally enhanced PCB copper area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode | Connects to input/high-side node; carries full forward current during conduction |
| Pin 2 | Cathode | Connects to output/low-side node; electrically tied to heatsink tab for thermal path |
| Heatsink Tab | Thermal & Electrical Common | Internally connected to cathode (Pin 2); must be electrically isolated from other system potentials unless referenced to cathode potential |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated junction | Prevents moisture-induced degradation and ensures long-term parameter stability under humid conditions |
| Ultrafast 35 ns recovery | Reduces reverse recovery charge (Qrr) to ~25 nC, minimizing cross-conduction loss in synchronous rectifier designs |
| Low leakage (10 µA @ 25 °C) | Minimizes standby power loss in offline adapters and energy-efficient standby circuits |
| RoHS-compliant & JESD201 Class 1A | Meets consumer electronics reliability requirements including tin whisker mitigation without high-cost plating |
| TO-263AB thermal resistance | RθJC = 2.2 °C/W enables >7 W dissipation with 30 °C/W board-level thermal resistance |
Applications
| Server PSU Output Rectification | Industrial DC-DC Converter |
|---|---|
Use Scenario: Secondary-side 12 V output rectification in 80 PLUS Titanium server PSUs operating at 300 kHz. IC Role / Device Role / Timing Role: Ultrafast freewheeling diode replacing Schottky in high-temp zones where VF trade-off is acceptable for improved reliability. Use Value: Enables 150 °C junction operation without derating, supporting compact heatsink designs in constrained 1U chassis. | Use Scenario: Input bridge rectification in isolated 48 V to 5 V flyback converters for PLC I/O modules. IC Role / Device Role / Timing Role: High-surge-capable input rectifier handling line transients and cold-start inductive kickback. Use Value: 125 A IFSM rating eliminates need for parallel devices, reducing BOM count and layout complexity. |
| Solar Microinverter DC Link | Automotive Onboard Charger (OBC) Auxiliary Supply |
Use Scenario: DC link clamping and snubber rectification in 1 kW microinverters with 50 kHz H-bridge switching. IC Role / Device Role / Timing Role: Fast-recovery clamp diode managing reactive energy during MOSFET dead-time transitions. Use Value: 35 ns trr prevents voltage overshoot beyond 400 V rating during rapid polarity reversal. | Use Scenario: Auxiliary 12 V supply rectification in 6.6 kW OBCs, operating continuously at 85 °C ambient. IC Role / Device Role / Timing Role: Primary-side rectifier feeding isolated bias winding for gate drivers and controllers. Use Value: 2.2 °C/W RθJC maintains TJ < 135 °C with standard 2 oz copper, avoiding thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay FESB8JTHE3/45 | VRRM = 600 V; trr = 50 ns; VF = 1.50 V at 8 A | Higher voltage margin for 400 V AC input designs; slower recovery increases switching loss at >200 kHz | Select when primary concern is overvoltage robustness rather than high-frequency efficiency |
| ON Semiconductor MUR840E | VRRM = 400 V; trr = 35 ns; VF = 1.25 V; TO-220AC package; RθJC = 5.0 °C/W | Lower VF improves light-load efficiency; through-hole mounting limits power density and thermal performance | Select when legacy through-hole assembly or lower forward drop outweighs surface-mount thermal advantages |
Compared with FESB8JTHE3/45, the FESB8GTHE3_A/P offers faster recovery and lower forward voltage for higher-frequency operation, while compared with MUR840E, it delivers superior thermal performance via TO-263AB packaging-enabling smaller heatsinks and higher power density in space-constrained designs.
Availability
FESB8GTHE3_A/P is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, solar microinverters, and automotive onboard charger auxiliary supplies requiring stable component supply and consistent parametric performance across production lots.
Supply support for FESB8GTHE3_A/P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, founded in 1962 and headquartered in Malvern, Pennsylvania.
The FES(F,B)8xT series was developed specifically for high-frequency power conversion systems demanding reliable ultrafast recovery, low leakage, and robust surge capability in cost-sensitive consumer and industrial applications.
FAQ
What is the maximum junction temperature rating for the FESB8GTHE3_A/P?
The FESB8GTHE3_A/P has a maximum junction temperature (TJ) rating of 150 °C, verified per Vishay Document Number 88600. This allows sustained operation in high-ambient environments when mounted on a properly sized PCB copper heatsink. Derating curves in the FESB8GTHE3_A/P datasheet specify that IF(AV) drops to 5.5 A at TC = 125 °C, confirming thermal design margins for industrial applications.
Is the FESB8GTHE3_A/P RoHS compliant and lead-free?
Yes, the FESB8GTHE3_A/P is RoHS-compliant per Directive 2011/65/EU and features matte tin-plated leads solderable per J-STD-002 and JESD22-B102. The "E3" suffix confirms compliance with JESD201 Class 1A whisker testing, making it suitable for consumer-grade surface-mount assemblies without post-soldering inspection concerns.
What is the reverse recovery time (trr) specification for the FESB8GTHE3_A/P?
The FESB8GTHE3_A/P has a maximum reverse recovery time (trr) of 35 ns, measured at IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A per Vishay Document Number 88600. This value is confirmed for the entire FESB8xT variant group and directly enables efficient operation in 200–500 kHz switching power supplies without excessive switching loss or voltage overshoot.
Does the FESB8GTHE3_A/P have isolated terminals like the ITO-220AC version?
No, the FESB8GTHE3_A/P in TO-263AB package does not provide electrical isolation between terminals and heatsink. Its metal tab is internally connected to Pin 2 (cathode), unlike the ITO-220AC variant which offers 1500 VAC isolation. System-level insulation must be implemented externally if cathode-referenced heatsinking is not acceptable.
What is the typical junction capacitance (CJ) of the FESB8GTHE3_A/P?
The typical junction capacitance (CJ) of the FESB8GTHE3_A/P is 50 pF, measured at 4.0 V and 1 MHz per Vishay Document Number 88600. This value applies specifically to the 400 V-rated FESB8GT variant and influences high-frequency EMI behavior and snubber design in hard-switched topologies.
FESB8GTHE3_A/P Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 400 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 1.3 V @ 8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 400 V
- Capacitance @ Vr, F:
- -
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
- Operating Temperature - Junction:
- -55°C ~ 150°C
FESB8GTHE3_A/P FAQ
1.How can I place an order for FESB8GTHE3_A/P through Aetrix?
Please submit a Request for Quotation (RFQ) for FESB8GTHE3_A/P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FESB8GTHE3_A/P reliable?
The price and inventory of FESB8GTHE3_A/P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FESB8GTHE3_A/P is usually 5 days.
3.What payment methods are accepted for FESB8GTHE3_A/P?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FESB8GTHE3_A/P transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FESB8GTHE3_A/P?
FESB8GTHE3_A/P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FESB8GTHE3_A/P order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FESB8GTHE3_A/P?
For technical support, including FESB8GTHE3_A/P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FESB8GTHE3_A/P requirements.
6.How does Aetrix verify that FESB8GTHE3_A/P is sourced from the original manufacturer or authorized distributors?
All FESB8GTHE3_A/P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FESB8GTHE3_A/P meets industry standards.
7.What is the process for return or replacement of FESB8GTHE3_A/P?
All FESB8GTHE3_A/P units undergo pre-shipment inspection (PSI). If there is an issue with FESB8GTHE3_A/P, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FESB8GTHE3_A/P part is unused and in its original packaging.
Return procedure for FESB8GTHE3_A/P:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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