Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division FESB8HTHE3_A/I

Part No.:
FESB8HTHE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Single Diodes
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixFESB8HTHE3_A/I.pdf
Description:
DIODE GEN PURP 500V 8A TO263AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,387

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

FESB8HTHE3_A/I from Vishay General Semiconductor is an ultrafast plastic rectifier diode in TO-263AB (D²PAK) package, rated for 500 V repetitive peak reverse voltage (VRRM), 8.0 A average forward current (IF(AV)), and 35 ns reverse recovery time (trr). It serves as a high-efficiency freewheeling or output rectifier in high-frequency switching power supplies and DC-DC converters.

For engineers reviewing the FESB8HTHE3_A/I datasheet, FESB8HTHE3_A/I pinout, FESB8HTHE3_A/I application, or FESB8HTHE3_A/I equivalent, key selection criteria include its 500 V blocking capability, low 0.95 V forward voltage at 8.0 A, 125 A surge rating, 150 °C max junction temperature, and RoHS-compliant, consumer-grade (E3 suffix) construction with JESD201 Class 1A whisker resistance.

Technical Context

This device is a single-die, glass-passivated planar junction silicon rectifier optimized for high-speed switching. Its 35 ns trr and low stored charge enable minimal switching losses in hard-switched topologies operating up to several hundred kHz.

Thermally, it features a typical junction-to-case thermal resistance (RθJC) of 2.2 °C/W when mounted on a heatsink via the exposed cathode tab (Pin 2), supporting continuous 8.0 A conduction at TC = 100 °C without derating beyond standard curves.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 500 V - Sustains 500 V repetitive reverse voltage; suitable for 375 V DC bus applications with 25 % margin.
IF(AV) 8.0 A at TC = 100 °C - Continuous forward current rating under heatsink-cooled conditions.
trr 35 ns - Ultrafast recovery enables high-frequency operation with low turn-off loss in SMPS.
VF 0.95 V at IF = 8.0 A - Low conduction loss improves system efficiency and reduces thermal load.
IFSM 125 A - Withstands 8.3 ms half-sine surge; supports inrush and fault-current handling in power stages.
TJ max. 150 °C - Enables reliable operation in industrial ambient environments with proper thermal design.
RθJC 2.2 °C/W - Confirmed for TO-263AB package; defines minimum heatsink requirement for thermal management.

Pinout & Package

Package: TO-263AB (D²PAK), surface-mount, with isolated mounting tab (cathode). Matte tin-plated terminals, UL 94V-0 epoxy, MSL Level 1 compliant.

Pin/Terminal Circuit Role Design Meaning
Pin 1 Anode Input terminal for forward current flow; connects to switching node or transformer secondary.
Pin 2 / Tab Cathode Output terminal and thermally conductive heatsink interface; electrically isolated from PCB ground unless explicitly connected.

Key Features

Feature Design Value
Glass passivated chip junction Enhances long-term reliability and moisture resistance vs. epoxy-passivated alternatives.
Ultrafast 35 ns recovery Reduces switching loss and EMI generation in 100–500 kHz SMPS designs.
Low 0.95 V forward drop at 8 A Lowers conduction loss by ~15 % compared to standard fast rectifiers with VF ≥ 1.1 V.
JESD201 Class 1A whisker resistance Validated for consumer-grade applications where tin whisker growth must be mitigated.
RoHS-compliant, UL 94V-0 epoxy Meets environmental compliance and flammability safety requirements for end equipment.

Applications

AC-DC Power Adapters DC-DC Buck Converters

Use Scenario: Secondary-side rectification in 65–100 W offline flyback adapters powering laptops and monitors.

IC Role / Device Role / Timing Role: Output rectifier converting high-frequency transformer AC to regulated DC; operates synchronously with MOSFET switching edge.

Use Value: 35 ns trr minimizes reverse recovery ringing and improves light-load efficiency over standard FRDs.

Use Scenario: Freewheeling path in 12 V input, 3.3/5 V output buck converters for FPGA or microprocessor core rails.

IC Role / Device Role / Timing Role: Unidirectional current path during low-side switch off-time; handles peak inductor current up to 8 A.

Use Value: 0.95 V VF reduces conduction loss by >0.5 W vs. 1.2 V alternatives at full load, easing thermal design.

Industrial Motor Drives LED Driver Power Stages

Use Scenario: Snubber and clamp rectification in 24–48 V H-bridge gate driver auxiliary supplies.

IC Role / Device Role / Timing Role: Fast recovery clamp diode absorbing inductive kickback energy during MOSFET commutation.

Use Value: 125 A IFSM withstands repeated transient surges without degradation in motor control feedback loops.

Use Scenario: Constant-current output rectification in isolated LED drivers for street lighting (50–150 W).

IC Role / Device Role / Timing Role: High-reliability output rectifier operating continuously at elevated ambient temperatures (>70 °C).

Use Value: 150 °C TJ max and 2.2 °C/W RθJC support stable operation in sealed, thermally constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
STTH8R06D Same VRRM (600 V), higher VF (1.7 V @ 8 A), slower trr (60 ns), TO-220AC package. Requires heatsink mounting and layout revision; better suited for lower-frequency (<100 kHz), higher-voltage margin designs. Select when 600 V rating is mandatory and thermal budget allows higher VF penalty.
ON Semi MUR860CT Dual common-cathode configuration, 600 V, 8 A per diode, 60 ns trr, TO-220AB package. Not single-diode; requires dual-output or center-tapped transformer topology; not pin-compatible. Choose only for dual-channel rectification needs; not a direct functional substitute for FESB8HTHE3_A/I's single-anode/single-cathode topology.

Compared with STTH8R06D and MUR860CT, FESB8HTHE3_A/I delivers superior high-frequency efficiency due to its 35 ns trr and 0.95 V VF, while its TO-263AB footprint enables compact, surface-mount power stage layouts without through-hole assembly.

Availability

FESB8HTHE3_A/I is available at Aetrix Electronics and suitable for high-frequency switching power supplies, DC-DC converters, and industrial motor drive auxiliary supplies requiring stable component supply and RoHS-compliant manufacturing.

Supply support for FESB8HTHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.

The FES(F,B)8xT family targets cost-sensitive, high-volume power conversion applications demanding ultrafast recovery, low VF, and robust surge capability - especially in consumer and industrial SMPS designs.

FAQ

What is the maximum junction temperature rating for the FESB8HTHE3_A/I?

The FESB8HTHE3_A/I has a maximum junction temperature (TJ) of 150 °C, verified per Vishay Document Number 88600. This rating allows operation in demanding thermal environments when properly heatsinked via the cathode tab. Derating curves in the FESB8HTHE3_A/I datasheet define safe current limits versus case temperature, ensuring long-term reliability at elevated ambient conditions.

Is the FESB8HTHE3_A/I RoHS-compliant and lead-free?

Yes, the FESB8HTHE3_A/I is RoHS-compliant per Directive 2011/65/EU and WEEE 2002/96/EC, with matte tin-plated leads and lead-free solder compatibility confirmed in the official Vishay documentation. The "E3" suffix denotes consumer-grade qualification including JESD201 Class 1A whisker testing, and all materials meet Vishay's Material Category Policy for hazardous substance restrictions.

What is the reverse recovery time (trr) of the FESB8HTHE3_A/I, and under what conditions is it measured?

The FESB8HTHE3_A/I has a maximum reverse recovery time (trr) of 35 ns, measured at IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A per Vishay Document Number 88600. This ultrafast value is critical for minimizing switching losses in high-frequency power converters and distinguishes FESB8HTHE3_A/I from standard fast recovery diodes with trr > 50 ns.

Can the FESB8HTHE3_A/I be used as a direct replacement for the FES8HT-E3/45 in TO-220AC package?

No - the FESB8HTHE3_A/I uses TO-263AB (D²PAK) packaging with surface-mount cathode tab, whereas FES8HT-E3/45 is in through-hole TO-220AC. Though electrically identical in VRRM, IF(AV), and trr, the FESB8HTHE3_A/I requires PCB land pattern and thermal design changes. It is a functional alternative, not a pin-compatible drop-in replacement.

What is the thermal resistance from junction to case (RθJC) for the FESB8HTHE3_A/I?

The FESB8HTHE3_A/I has a typical junction-to-case thermal resistance (RθJC) of 2.2 °C/W, specified for the TO-263AB package in Vishay Document Number 88600. This value assumes proper mounting of the cathode tab to a heatsink or copper pour; actual thermal performance depends on interface material, clamping force, and PCB copper area.

FESB8HTHE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
500 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
50 ns
Current - Reverse Leakage @ Vr:
10 µA @ 500 V
Capacitance @ Vr, F:
-
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263AB (D2PAK)
Operating Temperature - Junction:
-55°C ~ 150°C

FESB8HTHE3_A/I FAQ

1.How can I place an order for FESB8HTHE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for FESB8HTHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FESB8HTHE3_A/I reliable?

The price and inventory of FESB8HTHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FESB8HTHE3_A/I is usually 5 days.

3.What payment methods are accepted for FESB8HTHE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FESB8HTHE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FESB8HTHE3_A/I?

FESB8HTHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FESB8HTHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FESB8HTHE3_A/I?

For technical support, including FESB8HTHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FESB8HTHE3_A/I requirements.

6.How does Aetrix verify that FESB8HTHE3_A/I is sourced from the original manufacturer or authorized distributors?

All FESB8HTHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FESB8HTHE3_A/I meets industry standards.

7.What is the process for return or replacement of FESB8HTHE3_A/I?

All FESB8HTHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with FESB8HTHE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FESB8HTHE3_A/I part is unused and in its original packaging.

Return procedure for FESB8HTHE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

FESB8HTHE3_A/I Tags

  • FESB8HTHE3_A/I
  • FESB8HTHE3_A/I PDF
  • FESB8HTHE3_A/I Datasheet
  • FESB8HTHE3_A/I Specifications
  • FESB8HTHE3_A/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division FESB8HTHE3_A/I
  • Buy FESB8HTHE3_A/I
  • FESB8HTHE3_A/I Price
  • FESB8HTHE3_A/I Distributor
  • FESB8HTHE3_A/I Supplier
  • FESB8HTHE3_A/I Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER