Vishay General Semiconductor - Diodes Division FESB8HTHE3_A/P

Overview

FESB8HTHE3_A/P from Vishay General Semiconductor is an ultrafast plastic rectifier diode in TO-263AB package, rated for 500 V repetitive peak reverse voltage (V_RRM), 8.0 A average forward current (I_F(AV)), and 35 ns reverse recovery time (t_rr), designed for high-frequency switching power supply freewheeling and DC-DC converter output rectification.

For engineers reviewing the FESB8HTHE3_A/P datasheet, FESB8HTHE3_A/P pinout, FESB8HTHE3_A/P application, or FESB8HTHE3_A/P equivalent, key selection criteria include its 500 V blocking capability, low 0.95 V forward voltage at 8 A, 125 A surge rating, thermal resistance of 2.2 °C/W (junction-to-case), and RoHS-compliant, consumer-grade E3 suffix with JESD201 Class 1A whisker test qualification.

Technical Context

This device is a single-die, planar passivated silicon PN junction rectifier optimized for ultrafast switching performance. Its 35 ns t_rr and low 0.95 V V_F at I_F = 8 A enable high efficiency in 100–500 kHz SMPS topologies, while the glass-passivated junction ensures stable leakage (<10 µA at 25 °C) and reliability under thermal cycling.

The TO-263AB surface-mount package provides low thermal resistance (R_θJC = 2.2 °C/W) and mechanical robustness for automated assembly. It supports solder reflow per J-STD-020 MSL Level 1 and withstands 260 °C solder dip for 40 s - critical for high-volume manufacturing of industrial and consumer power supplies.

Key Specifications

Pinout & Package

Package: TO-263AB (D²PAK), surface-mount, isolated heatsink tab (pin 2), matte tin-plated leads compliant with J-STD-002 and JESD22-B102.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with FESB8JTHE3/45 and MUR860CT, the FESB8HTHE3_A/P delivers optimal balance of 500 V rating, 35 ns speed, and 0.95 V forward drop in a surface-mount TO-263AB package - making it preferred for space-constrained, high-efficiency 100–300 kHz power stages where voltage margin and thermal performance are tightly coupled.

Availability

FESB8HTHE3_A/P is available at Aetrix Electronics and suitable for switching mode power supplies, DC-DC converters, and industrial motor drive snubbers requiring stable component supply, consistent parametric performance, and RoHS-compliant manufacturing.

Supply support for FESB8HTHE3_A/P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, efficiency, and manufacturability.

The FES(F,B)8xT family was engineered for high-frequency power conversion, delivering ultrafast recovery and low forward voltage in standardized packages to replace older generation fast rectifiers in next-gen SMPS and inverter designs.

FAQ

What is the maximum junction temperature rating for the FESB8HTHE3_A/P?

The FESB8HTHE3_A/P has a maximum junction temperature (T_J) of +150 °C, allowing reliable operation in thermally demanding environments such as enclosed power supplies and industrial motor drives. This rating is validated per Vishay's thermal characterization and supports continuous operation at full 8.0 A I_F(AV) when mounted on adequate copper area or heatsink per the R_θJC = 2.2 °C/W specification. The FESB8HTHE3_A/P maintains parameter stability up to this limit without derating.

Does the FESB8HTHE3_A/P meet RoHS and lead-free requirements?

Yes, the FESB8HTHE3_A/P complies with RoHS Directive 2011/65/EU and is lead-free. Its matte tin-plated terminals meet J-STD-002 and JESD22-B102 solderability standards, and the epoxy case meets UL 94V-0 flammability rating. The "E3" suffix confirms consumer-grade qualification including JESD201 Class 1A whisker testing - all documented in Vishay's official datasheet 88600.

What is the reverse recovery time (t_rr) of the FESB8HTHE3_A/P and how is it measured?

The FESB8HTHE3_A/P has a maximum reverse recovery time (t_rr) of 35 ns, measured under conditions of I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A per Vishay's datasheet 88600. This value reflects the time required for minority carriers to clear the junction after forward conduction, directly impacting switching loss and EMI in high-frequency converters. The FESB8HTHE3_A/P achieves this performance via optimized doping and passivation, distinguishing it from slower 50–60 ns alternatives.

Can the FESB8HTHE3_A/P be used as a direct replacement for the FES8HT-E3/45 in TO-220AC?

No, the FESB8HTHE3_A/P is not a direct replacement for FES8HT-E3/45 due to different packages: FESB8HTHE3_A/P uses TO-263AB (surface-mount), while FES8HT-E3/45 uses TO-220AC (through-hole). Though both share identical electrical specs (500 V, 8 A, 35 ns), the FESB8HTHE3_A/P requires PCB redesign for SMT pads and thermal land pattern. Mechanical compatibility is not assured; refer to Vishay's package drawings for exact dimensions before substitution.

What is the thermal resistance from junction to case (R_θJC) for the FESB8HTHE3_A/P?

The thermal resistance from junction to case (R_θJC) for the FESB8HTHE3_A/P is 2.2 °C/W, as specified in Vishay's datasheet 88600. This value applies to the TO-263AB package with proper soldering of the cathode/heatsink tab to a minimum 1.0 in² (6.5 cm²) copper area. It enables accurate junction temperature estimation: ΔT_J-C = 2.2 × P_D, where P_D is power dissipation. This R_θJC is significantly lower than TO-220AC variants (5.0 °C/W), confirming superior thermal performance of the FESB8HTHE3_A/P.