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Vishay General Semiconductor - Diodes Division FESB8JTHE3_A/P
- Part No.:
- FESB8JTHE3_A/P
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
FESB8JTHE3_A/P.pdf
- Description:
- DIODE GEN PURP 600V 8A TO263AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,332
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Product details
Overview
FESB8JTHE3_A/P from Vishay General Semiconductor is an ultrafast plastic rectifier diode in TO-263AB (D²PAK) package, rated for 600 V repetitive peak reverse voltage (VRRM), 8.0 A average forward current (IF(AV)), and 35 ns reverse recovery time (trr). It serves as a high-efficiency freewheeling or output rectifier in high-frequency switching power supplies.
For engineers reviewing the FESB8JTHE3_A/P datasheet, FESB8JTHE3_A/P pinout, FESB8JTHE3_A/P application, or FESB8JTHE3_A/P equivalent, key selection criteria include its 600 V blocking capability, low 0.95 V forward voltage at 8 A, 125 A surge rating, RoHS-compliant construction, and TO-263AB thermal performance with RθJC = 2.2 °C/W.
Technical Context
This device is a single-die, glass-passivated silicon junction rectifier optimized for high-speed switching. Its 35 ns trr and low stored charge enable minimal switching losses in hard-switched topologies operating up to several hundred kHz.
Designed for surface-mount heatsink attachment via the exposed cathode tab (Pin 2), it delivers thermal resistance of 2.2 °C/W junction-to-case and supports continuous operation up to 150 °C junction temperature, with 10 µA max reverse leakage at 25 °C and 500 µA at 100 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - Supports primary-side snubberless flyback or secondary-side rectification in 48 V–400 V DC bus systems |
| IF(AV) | 8.0 A at TC = 100 °C - Enables compact heatsinking in space-constrained 100–200 W SMPS designs |
| trr | 35 ns - Reduces turn-off loss and EMI generation in 200–500 kHz PWM converters |
| VF | 0.95 V @ 8 A - Low conduction loss improves efficiency over Schottky alternatives above 100 V |
| RθJC | 2.2 °C/W - Allows direct PCB copper pour heatsinking without additional thermal interface material |
| IFSM | 125 A (8.3 ms half-sine) - Withstands inrush and transient overloads in industrial power supplies |
Pinout & Package
Package: TO-263AB (D²PAK), surface-mount with isolated mounting tab (cathode). Molded epoxy meets UL 94V-0; matte tin-plated leads comply with J-STD-002 solderability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Anode) | Anode connection | Soldered to input/switch node; carries full load current during conduction phase |
| Pin 2 (Cathode / Tab) | Cathode and thermal path | Electrically connected to cathode; must be soldered to large copper area for thermal management |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable reverse leakage and long-term reliability under humidity and bias stress |
| Ultrafast 35 ns recovery | Enables use in high-frequency LLC resonant and active-clamp forward converters without snubber circuits |
| MSL Level 1 (245 °C) | Compatible with standard lead-free reflow profiles without moisture sensitivity handling |
| JESD201 Class 1A whisker test | Validated for consumer-grade applications requiring long-term tin-lead-free interconnect integrity |
| RoHS 2011/65/EU compliant | Meets EU hazardous substance restrictions for global commercial and industrial deployment |
Applications
| Server PSU Output Rectification | Industrial DC-DC Converter Freewheeling |
|---|---|
Use Scenario: Secondary-side synchronous rectification replacement in 12 V/48 V output rails of 1U server PSUs. IC Role / Device Role / Timing Role: Ultrafast freewheeling diode clamping in non-isolated buck-derived topologies. Use Value: 35 ns trr minimizes reverse recovery spikes, reducing MOSFET gate drive stress and EMI filter size. |
Use Scenario: Freewheeling path in 24 V input, 5–15 V output industrial DC-DC modules with 300 kHz switching. IC Role / Device Role / Timing Role: High-current unidirectional current path during low-side switch off-time. Use Value: 125 A IFSM withstands motor startup surges and PLC output transients without derating. |
| Telecom Rectifier Module | Renewable Energy Inverter Snubber |
Use Scenario: Input rectification stage in -48 V telecom rectifier modules operating at 200 kHz. IC Role / Device Role / Timing Role: AC-to-DC conversion with low conduction loss and fast commutation. Use Value: 0.95 V VF at 8 A reduces thermal load on heatsinks in densely packed 3 kW rack units. |
Use Scenario: Clamp diode in IGBT-based solar inverter H-bridge snubber networks. IC Role / Device Role / Timing Role: Transient energy absorption during IGBT turn-off dv/dt events. Use Value: 600 V VRRM and 150 °C TJ(max) support reliable operation in outdoor-rated inverters with wide ambient swings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH8R06DJF | Same TO-263AB package, 600 V VRRM, but trr = 55 ns and VF = 1.15 V @ 8 A | Higher conduction and switching loss; less suitable for >300 kHz designs | Prefer when cost sensitivity outweighs efficiency targets in 100–200 kHz telecom supplies |
| IXYS MUR860E | TO-220AC package, identical 600 V/8 A ratings, trr = 35 ns, but RθJC = 5.0 °C/W | Requires larger heatsink and through-hole assembly; unsuitable for SMT-only production | Select only if legacy TO-220 footprint reuse is mandatory and thermal margin allows 2.3× higher junction rise |
Compared with STTH8R06DJF and IXYS MUR860E, FESB8JTHE3_A/P delivers superior thermal performance (RθJC = 2.2 °C/W) and lowest VF in its class, making it optimal for high-density, high-efficiency SMT power stages where board space and thermal headroom are constrained.
Availability
FESB8JTHE3_A/P is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, RoHS compliance, and high-reliability ultrafast rectification.
Supply support for FESB8JTHE3_A/P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.
The FES(F,B)8xT family was engineered for high-frequency power conversion, targeting switching-mode power supplies, inverters, and freewheeling applications where ultrafast recovery, low VF, and robust surge capability are critical.
FAQ
What is the maximum junction temperature rating for FESB8JTHE3_A/P?
The FESB8JTHE3_A/P has a maximum junction temperature (TJ(max)) of +150 °C, enabling operation in high-ambient environments such as enclosed server chassis or industrial enclosures. This rating is validated per JEDEC standards and supported by its 2.2 °C/W thermal resistance, allowing sustained 8 A conduction with appropriate PCB copper area.
Is FESB8JTHE3_A/P compatible with lead-free reflow soldering processes?
Yes, FESB8JTHE3_A/P is rated MSL Level 1 per J-STD-020 and qualified for peak reflow temperatures up to 245 °C, making it fully compatible with standard Pb-free SAC305 reflow profiles. Its matte tin-plated leads meet J-STD-002 solderability requirements without pre-baking.
Does FESB8JTHE3_A/P have automotive qualification?
No, FESB8JTHE3_A/P carries the E3 suffix indicating consumer-grade qualification per JESD201 Class 1A whisker testing. For automotive applications, Vishay offers the HE3-suffix variant (e.g., FESB8JTHE3) which is AEC-Q101 qualified and meets JESD201 Class 2.
What is the reverse leakage current specification for FESB8JTHE3_A/P at elevated temperature?
At TC = 100 °C and rated VDC = 600 V, the FESB8JTHE3_A/P exhibits a maximum reverse leakage current (IR) of 500 µA. At 25 °C, the limit is 10 µA - both values confirmed in the Vishay Document Number 88600 datasheet under Electrical Characteristics.
How does the TO-263AB package of FESB8JTHE3_A/P improve thermal performance versus TO-220AC?
The TO-263AB package of FESB8JTHE3_A/P achieves RθJC = 2.2 °C/W, compared to 5.0 °C/W for the TO-220AC variant (FES8JTHE3). This 56 % lower thermal resistance results from the D²PAK's larger copper tab area and optimized internal bond wire layout, enabling more efficient heat transfer to the PCB heatsink.
FESB8JTHE3_A/P Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
- Operating Temperature - Junction:
- -55°C ~ 150°C
FESB8JTHE3_A/P FAQ
1.How can I place an order for FESB8JTHE3_A/P through Aetrix?
Please submit a Request for Quotation (RFQ) for FESB8JTHE3_A/P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FESB8JTHE3_A/P reliable?
The price and inventory of FESB8JTHE3_A/P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FESB8JTHE3_A/P is usually 5 days.
3.What payment methods are accepted for FESB8JTHE3_A/P?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FESB8JTHE3_A/P transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FESB8JTHE3_A/P?
FESB8JTHE3_A/P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FESB8JTHE3_A/P order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FESB8JTHE3_A/P?
For technical support, including FESB8JTHE3_A/P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FESB8JTHE3_A/P requirements.
6.How does Aetrix verify that FESB8JTHE3_A/P is sourced from the original manufacturer or authorized distributors?
All FESB8JTHE3_A/P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FESB8JTHE3_A/P meets industry standards.
7.What is the process for return or replacement of FESB8JTHE3_A/P?
All FESB8JTHE3_A/P units undergo pre-shipment inspection (PSI). If there is an issue with FESB8JTHE3_A/P, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FESB8JTHE3_A/P part is unused and in its original packaging.
Return procedure for FESB8JTHE3_A/P:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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