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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJA3835TU

Name: FJA3835TU
Brand: onsemi
SKU: FJA3835TU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FJA3835TU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-3P-3, SC-65-3

Datasheet:: FJA3835TU.pdf

Description:: TRANS NPN 120V 8A TO-3P

Quantity:: RFQ Add To RFQ list

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Product details

Overview

FJA3835TU from Fairchild Semiconductor is an NPN epitaxial silicon power transistor designed for high-current linear and switching amplifier stages, featuring 120 V V_CEO, 8 A DC collector current, 80 W power dissipation at T_C = 25°C, and a 30 MHz f_T; used in audio output stages and industrial motor drive pre-driver circuits.

For engineers reviewing the FJA3835TU datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area (SOA) robustness, V_CE(sat) ≤ 0.5 V at I_C = 3 A / I_B = 0.3 A, thermal derating above 25°C, and TO-3P mechanical compatibility with heatsink mounting requirements.

Technical Context

This discrete NPN bipolar junction transistor operates in linear or saturated switching modes with a wide SOA enabling reliable operation under transient overloads. Its epitaxial base structure supports stable h_FE (120–250 at V_CE = 4 V, I_C = 3 A) and low storage time (t_STG = 6.68 ms), critical for Class AB audio amplifiers and PWM-driven inductive loads.

Designed for high-power analog and switching applications, the FJA3835TU delivers 0.5 V V_CE(sat) and 1.2 V V_BE(sat) under heavy conduction, with Cob = 210 pF at V_CB = 10 V and f = 1 MHz, supporting bandwidth-limited but thermally resilient stage designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	120 V - Maximum collector-emitter voltage before breakdown; defines usable rail voltage headroom in amplifier or switch applications.
I_C (DC)	8 A - Continuous collector current capability; sets maximum sustained load current without thermal runaway at rated case temperature.
P_C	80 W at T_C = 25°C - Power dissipation limit at case; requires active heatsinking for operation above ambient.
h_FE	120–250 at V_CE = 4 V, I_C = 3 A - DC current gain range; determines required base drive current for target collector conduction.
f_T	30 MHz - Current gain bandwidth product; indicates upper frequency limit for small-signal amplification before gain drops to unity.
t_STG	6.68 ms - Storage time under specified switching conditions; impacts minimum achievable PWM frequency and switching loss in hard-switched topologies.

Pinout & Package

Package: TO-3P (EIAJ SC-65 compliant), metal-can package with isolated collector tab, intended for bolt-down heatsink mounting and high-power thermal management.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control electrode	Receives forward-biased current to enable conduction; requires driver capable of sourcing ≥0.3 A for full saturation at I_C = 3 A.
2 (Collector)	High-current output node	Electrically connected to metal tab; must be insulated from heatsink unless circuit design permits common-collector configuration.
3 (Emitter)	Current return path	Serves as reference node for base drive and load return; layout must minimize inductance to preserve switching fidelity.

Key Features

Feature	Design Value
Wide Safe Operating Area (SOA)	Enables reliable operation under simultaneous high-voltage/high-current transients-critical for audio amplifier clipping and inductive load switching.
High DC current gain (h_FE)	120–250 at I_C = 3 A ensures efficient base drive utilization and reduced driver-stage power loss.
Low V_CE(sat)	≤0.5 V at I_C = 3 A / I_B = 0.3 A minimizes conduction loss and improves thermal efficiency in linear and saturated operation.
Robust thermal rating	Junction temperature limit of 150°C and power derating curve allow predictable thermal design up to 125°C case temperature.

Applications

Audio Power Amplifier Output Stage	Industrial Motor Drive Pre-Driver
Use Scenario: Final output stage in Class AB audio amplifiers delivering 50–100 W into 4–8 Ω loads with low THD. IC Role / Device Role / Timing Role: NPN power transistor conducting high peak currents during signal swing while maintaining linearity and thermal stability. Use Value: Wide SOA and stable h_FE across temperature ensure consistent gain and distortion performance under dynamic thermal stress.	Use Scenario: High-side or low-side switch in H-bridge pre-driver circuits controlling 24–48 V DC motors up to 5 A average current. IC Role / Device Role / Timing Role: Discrete BJT providing controlled turn-on/turn-off of MOSFET gates or directly driving small inductive loads. Use Value: Low t_STG (6.68 ms) and fast t_F (0.68 ms) support PWM frequencies up to ~1 kHz with minimal switching loss.
Ultrasonic Generator Driver	DC-DC Converter Switching Element
Use Scenario: Push-pull stage in 20–40 kHz ultrasonic cleaning or welding generators driving piezoelectric transducers. IC Role / Device Role / Timing Role: Linear-mode switch handling reactive loads with high dv/dt and di/dt demands. Use Value: 200 V V_CBO and 120 V V_CEO provide margin against flyback voltage spikes in resonant tank circuits.	Use Scenario: Primary-side switch in non-isolated buck or boost converters operating at ≤100 kHz with 12–48 V input rails. IC Role / Device Role / Timing Role: High-current bipolar switch replacing MOSFETs where gate drive complexity or cost is prohibitive. Use Value: 8 A I_C and 80 W P_C support continuous conduction mode operation with adequate thermal headroom using standard TO-3P heatsinks.

Audio Power Amplifier Output Stage

Industrial Motor Drive Pre-Driver

Use Scenario: Final output stage in Class AB audio amplifiers delivering 50–100 W into 4–8 Ω loads with low THD.

IC Role / Device Role / Timing Role: NPN power transistor conducting high peak currents during signal swing while maintaining linearity and thermal stability.

Use Value: Wide SOA and stable h_FE across temperature ensure consistent gain and distortion performance under dynamic thermal stress.

Use Scenario: High-side or low-side switch in H-bridge pre-driver circuits controlling 24–48 V DC motors up to 5 A average current.

IC Role / Device Role / Timing Role: Discrete BJT providing controlled turn-on/turn-off of MOSFET gates or directly driving small inductive loads.

Use Value: Low t_STG (6.68 ms) and fast t_F (0.68 ms) support PWM frequencies up to ~1 kHz with minimal switching loss.

Ultrasonic Generator Driver

DC-DC Converter Switching Element

Use Scenario: Push-pull stage in 20–40 kHz ultrasonic cleaning or welding generators driving piezoelectric transducers.

IC Role / Device Role / Timing Role: Linear-mode switch handling reactive loads with high dv/dt and di/dt demands.

Use Value: 200 V V_CBO and 120 V V_CEO provide margin against flyback voltage spikes in resonant tank circuits.

Use Scenario: Primary-side switch in non-isolated buck or boost converters operating at ≤100 kHz with 12–48 V input rails.

IC Role / Device Role / Timing Role: High-current bipolar switch replacing MOSFETs where gate drive complexity or cost is prohibitive.

Use Value: 8 A I_C and 80 W P_C support continuous conduction mode operation with adequate thermal headroom using standard TO-3P heatsinks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD127G	V_CEO = 100 V (vs. 120 V), h_FE min = 30 (vs. 120), P_C = 30 W (vs. 80 W)	Limited to lower-voltage, lower-power linear amplifiers and relay drivers; not suitable for 120 V rail or high-SOA demand.	Select only if system voltage ≤100 V and thermal budget restricts to <30 W dissipation.
2SC5200	V_CEO = 230 V, I_C = 15 A, P_C = 150 W, f_T = 30 MHz - higher voltage/current ratings but larger TO-3 package.	Used in high-fidelity audio amplifiers requiring >100 W output; compatible where board space allows TO-3 footprint.	Choose when higher voltage margin, greater current headroom, or legacy TO-3 mechanical fit is required.

Compared with MJD127G and 2SC5200, the FJA3835TU offers balanced 120 V/8 A capability in the compact TO-3P outline, making it optimal for mid-power audio and industrial control where SOA robustness and thermal efficiency are prioritized over extreme voltage or current ratings.

Availability

FJA3835TU is available at Aetrix Electronics and suitable for audio power amplifiers, industrial motor drives, ultrasonic generator circuits, and DC-DC converter designs requiring stable component supply and long-term manufacturability.

Supply support for FJA3835TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The FJA3835TU belongs to Fairchild's high-power NPN transistor family engineered for rugged linear and switching amplifier applications demanding wide SOA, high current, and thermal reliability.

FAQ

What is the maximum continuous collector current rating for the FJA3835TU?

The FJA3835TU has a maximum DC collector current (I_C) rating of 8 A at T_C = 25°C. This value decreases with rising case temperature per the published power derating curve. Operation above this current requires pulse conditions (I_CP = 16 A) and strict adherence to duty cycle and pulse width limits defined in the datasheet. Thermal design must ensure junction temperature remains ≤150°C under all operating conditions for the FJA3835TU.

Does the FJA3835TU have a built-in base-emitter resistor?

No, the FJA3835TU is a standard three-terminal NPN bipolar transistor without any integrated base-emitter resistors. It requires external base drive circuitry to supply appropriate forward bias current for conduction. The device's h_FE range (120–250 at V_CE = 4 V, I_C = 3 A) means base current must be carefully calculated to achieve desired collector current and saturation characteristics for the FJA3835TU.

What is the safe operating area (SOA) profile of the FJA3835TU?

The FJA3835TU features a wide SOA defined up to 120 V and 8 A DC, with single-pulse capability extending beyond those limits. Its SOA curve accounts for second breakdown effects and thermal limitations, allowing reliable operation under transient overloads typical in audio amplifiers and inductive switching. The SOA data is graphically presented in Figure 5 of the official FJA3835TU datasheet and must be referenced for specific operating point validation.

Can the FJA3835TU be used in parallel configurations?

Yes, the FJA3835TU can be paralleled for higher current handling, but requires careful attention to emitter ballasting resistors and matched thermal mounting to ensure current sharing. Due to positive temperature coefficient of V_BE(sat), thermal runaway risk is mitigated-but mismatched h_FE or unequal heatsinking can still cause imbalance. Designers should verify current distribution empirically and include margin for parameter spread when implementing parallel FJA3835TU devices.

Is the FJA3835TU RoHS compliant?

Yes, the FJA3835TU is RoHS compliant and lead-free per the original Fairchild Semiconductor specification (Rev. A1, 2008). It meets EU Directive 2011/65/EU requirements for restriction of hazardous substances. For compliance documentation including test reports and material declarations, refer to the official ON Semiconductor product page for FJA3835TU, as ON Semiconductor now maintains the legacy Fairchild portfolio.

FJA3835TU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 120 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 300mA, 3A

Current - Collector Cutoff (Max):: 100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 120 @ 3A, 4V

Power - Max:: 80 W

Frequency - Transition:: 30MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P

FJA3835TU FAQ

1.How can I place an order for FJA3835TU through Aetrix?

Please submit a Request for Quotation (RFQ) for FJA3835TU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJA3835TU reliable?

The price and inventory of FJA3835TU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJA3835TU is usually 5 days.

3.What payment methods are accepted for FJA3835TU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJA3835TU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJA3835TU?

FJA3835TU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJA3835TU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJA3835TU?

For technical support, including FJA3835TU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJA3835TU requirements.

6.How does Aetrix verify that FJA3835TU is sourced from the original manufacturer or authorized distributors?

All FJA3835TU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJA3835TU meets industry standards.

7.What is the process for return or replacement of FJA3835TU?

All FJA3835TU units undergo pre-shipment inspection (PSI). If there is an issue with FJA3835TU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJA3835TU part is unused and in its original packaging.

Return procedure for FJA3835TU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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