Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi FJA4210RTU

Part No.:
FJA4210RTU
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-3P-3, SC-65-3
Datasheet:
AetrixFJA4210RTU.pdf
Description:
TRANS PNP 140V 10A TO-3P
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,725

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

FJA4210RTU from Fairchild Semiconductor is a PNP epitaxial silicon power transistor designed for high-current audio amplifier output stages, featuring -140 V VCEO, -10 A IC (DC), 100 W PC at TC = 25°C, and 30 MHz fT; used in Class-AB push-pull audio power amplifiers driving 4–8 Ω loudspeakers.

For engineers reviewing the FJA4210RTU datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area (SOA) robustness at high VCE, low VCE(sat) under high current, hFE classification consistency (R/O/Y bins), and TO-3P thermal performance in linear-mode operation.

Technical Context

The FJA4210RTU operates as a linear PNP bipolar junction transistor with complementary pairing to the NPN FJA4310, enabling symmetrical push-pull amplifier designs. Its wide forward-bias SOA supports sustained operation at high voltage and current combinations without secondary breakdown.

Designed for analog power amplification, it delivers stable DC current gain (hFE = 50–180 at VCE = −4 V, IC = −3 A) and low saturation voltage (VCE(sat) = −0.5 V at IC = −5 A, IB = −0.5 A), critical for minimizing thermal stress in Class-AB output stages.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−140 V: Maximum collector-emitter voltage before breakdown; enables use in ±70 V rail audio amplifiers.
IC (DC)−10 A: Continuous collector current capability; supports >100 W RMS audio output into low-Z loads.
PC @ TC=25°C100 W: Thermal dissipation limit at case temperature; requires heatsink design per derating curve (Fig. 7).
fT30 MHz: Current-gain bandwidth product; ensures adequate gain margin up to 20 kHz audio band with stability.
VCE(sat)−0.5 V @ IC=−5 A, IB=−0.5 A: Low saturation voltage reduces conduction loss and heat generation in output stage.
hFE range50–180 @ VCE=−4 V, IC=−3 A: Binned gain (R/O/Y) allows matched pair selection for differential amplifier symmetry.
Cob400 pF @ VCB=−10 V, f=1 MHz: Output capacitance impacts high-frequency stability and slew rate in feedback loops.

Pinout & Package

Package: TO-3P (EIAJ SC-65 standard), metal-can package with isolated collector tab, rated for high-power linear operation and direct heatsink mounting.

Pin/TerminalCircuit RoleDesign Meaning
1 (Base)Control electrodeReceives base current to modulate collector current; requires current-limiting resistor in driver stage.
2 (Collector)Main current path (output)Electrically connected to metal case; must be insulated from heatsink unless system ground reference permits.
3 (Emitter)Current source terminalTypically tied to positive supply rail in PNP output stage; carries full load current with minimal voltage drop.

Key Features

FeatureDesign Value
Wide Forward-Bias SOASupports simultaneous high VCE and high IC without secondary breakdown-critical for linear audio output reliability.
High Power Dissipation100 W at TC = 25°C enables high-output-power amplifiers without forced-air cooling in many enclosures.
Complementary PairingEngineered as PNP counterpart to FJA4310 (NPN); ensures matched thermal and electrical characteristics in push-pull designs.
hFE Binning (R/O/Y)Three gain groups allow precise matching of devices in differential input or push-pull output stages for reduced distortion.
TO-3P Mechanical RobustnessEIAJ SC-65 compliant package provides mechanical stability, low thermal resistance, and reliable solder-mount or clamp attachment.

Applications

High-Fidelity Audio AmplifierProfessional PA System Output Stage

Use Scenario: Discrete Class-AB power amplifier delivering 100+ W RMS into 4 Ω or 8 Ω loudspeakers with low THD+N.

IC Role / Device Role / Timing Role: PNP output transistor in complementary emitter-follower configuration, handling negative half-cycle current delivery.

Use Value: Wide SOA and low VCE(sat) minimize thermal runaway risk and improve efficiency over competing discrete transistors.

Use Scenario: High-reliability output stage in touring-grade powered mixers and active line arrays.

IC Role / Device Role / Timing Role: Primary PNP switching/linear device in parallel-output configurations driving low-impedance voice coils.

Use Value: −140 V VCEO headroom accommodates transient voltage spikes common in live sound environments.

Studio Monitor Power SectionIndustrial Audio Signal Distribution

Use Scenario: Bi-amplified near-field studio monitors requiring clean, low-noise mid/high-frequency amplification.

IC Role / Device Role / Timing Role: Final PNP gain stage in active crossover networks, biased for low-quiescent-current linear operation.

Use Value: Tight hFE binning (R/O/Y) enables matched pairs that reduce DC offset and inter-channel imbalance.

Use Scenario: Distributed audio systems in commercial buildings with long speaker runs and impedance-matching transformers.

IC Role / Device Role / Timing Role: High-current output device in constant-voltage (70 V/100 V) amplifier modules.

Use Value: −10 A IC rating supports transformer primary current surges during program peaks without clipping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJE15034GVCEO = −150 V, IC = −8 A, PC = 75 W, TO-247 package; lower current but higher voltage rating.Better suited for high-voltage, medium-current switching; less ideal for high-current linear audio due to lower IC and PC.Select when higher VCEO margin is prioritized over peak current capability.
2SA1943VCEO = −230 V, IC = −15 A, PC = 150 W, TO-3P package; broader SOA and higher power rating than FJA4210RTU.Preferred for ultra-high-fidelity amplifiers demanding extended SOA and thermal headroom beyond FJA4210RTU limits.Choose for new designs targeting maximum reliability at high power; verify hFE matching requirements.

Compared with MJE15034G and 2SA1943, the FJA4210RTU offers balanced voltage/current capability and industry-standard TO-3P footprint, making it optimal for cost-sensitive, high-volume audio amplifier production where −140 V/−10 A meets design margins.

Availability

FJA4210RTU is available at Aetrix Electronics and suitable for high-fidelity audio amplifiers, professional PA systems, studio monitor power sections, and industrial audio signal distribution requiring stable component supply and consistent parametric binning.

Supply support for FJA4210RTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The FJA4210RTU belongs to Fairchild's high-power audio transistor family, engineered specifically for linear-mode operation in high-fidelity and professional audio amplifier output stages.

FAQ

What is the maximum continuous collector current rating for the FJA4210RTU?

The FJA4210RTU has a maximum continuous collector current (IC) rating of −10 A at TA = 25°C. This rating assumes proper heatsinking and adherence to the power derating curve (Figure 7 in the datasheet). At elevated case temperatures, allowable current decreases linearly per the specified derating slope of 0.8 W/°C above 25°C.

Does the FJA4210RTU have a specified Safe Operating Area (SOA)?

Yes, the FJA4210RTU features a defined forward-bias SOA (Figure 6), covering DC and pulsed conditions up to 10 ms. The SOA boundary ensures reliable operation without secondary breakdown across combinations of VCE and IC, critical for linear audio amplifier applications where both parameters vary dynamically.

What is the purpose of hFE binning (R/O/Y) for the FJA4210RTU?

The FJA4210RTU is binned into R (50–100), O (70–140), and Y (90–180) hFE groups to enable precise matching of devices in push-pull or differential amplifier stages. Matching within the same bin minimizes DC offset, improves thermal tracking, and reduces even-order harmonic distortion in high-fidelity audio circuits.

Is the collector of the FJA4210RTU electrically connected to the case?

Yes, Pin 2 (Collector) of the FJA4210RTU is internally connected to the metal TO-3P package case. When mounted to a heatsink, electrical isolation (e.g., mica washer + thermal grease or silicone pad) is mandatory unless the circuit design intentionally references the collector to chassis ground.

How does the FJA4210RTU compare to its complementary NPN counterpart?

The FJA4210RTU is explicitly designed as the PNP complement to the NPN FJA4310. Both share identical TO-3P packaging, matched voltage/current ratings (e.g., VCEO/VBCO, IC), SOA contours, and thermal characteristics-enabling symmetrical push-pull amplifier topologies with minimized thermal and gain mismatch.

FJA4210RTU Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-3P-3, SC-65-3
Packaging:
Tube
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
10 A
Voltage - Collector Emitter Breakdown (Max):
140 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 500mA, 5A
Current - Collector Cutoff (Max):
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 3A, 4V
Power - Max:
100 W
Frequency - Transition:
30MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-3P

FJA4210RTU FAQ

1.How can I place an order for FJA4210RTU through Aetrix?

Please submit a Request for Quotation (RFQ) for FJA4210RTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJA4210RTU reliable?

The price and inventory of FJA4210RTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJA4210RTU is usually 5 days.

3.What payment methods are accepted for FJA4210RTU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJA4210RTU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJA4210RTU?

FJA4210RTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJA4210RTU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJA4210RTU?

For technical support, including FJA4210RTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJA4210RTU requirements.

6.How does Aetrix verify that FJA4210RTU is sourced from the original manufacturer or authorized distributors?

All FJA4210RTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJA4210RTU meets industry standards.

7.What is the process for return or replacement of FJA4210RTU?

All FJA4210RTU units undergo pre-shipment inspection (PSI). If there is an issue with FJA4210RTU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJA4210RTU part is unused and in its original packaging.

Return procedure for FJA4210RTU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

FJA4210RTU Tags

  • FJA4210RTU
  • FJA4210RTU PDF
  • FJA4210RTU Datasheet
  • FJA4210RTU Specifications
  • FJA4210RTU Images
  • onsemi
  • onsemi FJA4210RTU
  • Buy FJA4210RTU
  • FJA4210RTU Price
  • FJA4210RTU Distributor
  • FJA4210RTU Supplier
  • FJA4210RTU Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER