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onsemi FJA4213RTU
- Part No.:
- FJA4213RTU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-3P-3, SC-65-3
- Datasheet:
-
FJA4213RTU.pdf
- Description:
- TRANS PNP 250V 17A TO-3P
- Quantity:
- Payment:
- Shipping:
Inventory:6,614
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Product details
Overview
FJA4213RTU from ON Semiconductor is a PNP epitaxial silicon power transistor designed for high-fidelity audio output and general-purpose power amplification. It delivers -17A collector current, -250V VCEO, 130W power dissipation at TC=25°C, and 30MHz current gain bandwidth, operating reliably in Class-AB audio stages and linear power amplifier circuits.
For engineers reviewing the FJA4213RTU datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area (SOA) robustness, hFE linearity at high current, thermal resistance (0.96°C/W), and complementary pairing with FJA4313 in push-pull configurations.
Technical Context
This device operates as a high-voltage, high-current PNP bipolar junction transistor with fixed emitter-base and collector-base breakdown ratings of -250V. Its DC current gain ranges from 55–110 (R grade) at IC=-1A and drops to 35–60 at IC=-7A, supporting stable biasing across wide dynamic ranges.
The FJA4213RTU features low saturation voltage (-0.4V to -3.0V at IC=-8A/IB=-0.8A), excellent gain linearity for low THD, and a wide SOA enabling reliable operation under transient overload conditions without secondary breakdown.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | -250V - Supports rail voltages up to ±200V in linear amplifier designs without breakdown risk. |
| IC | -17A - Enables high-power output stage capability in discrete audio amplifiers and industrial drivers. |
| PD @ TC=25°C | 130W - Requires heatsinking with thermal resistance ≤0.96°C/W to maintain TJ <150°C. |
| fT | 30MHz - Sufficient for full-audio-band amplification with minimal phase shift distortion. |
| hFE (R grade) | 55–110 @ VCE=-5V, IC=-1A - Provides predictable bias stability in emitter-follower and driver stages. |
| RθJC | 0.96°C/W - Dictates minimum heatsink thermal resistance required for continuous 130W operation. |
| Cob | 360pF @ VCB=-10V - Influences high-frequency stability and Miller effect in common-emitter configurations. |
Pinout & Package
Package: TO-3P (isolated metal tab, 3-pin through-hole). Dimensions per datasheet Rev. C: 23.40 × 19.90 × 16.50 mm (L×W×H), with 3.20 mm mounting hole diameter.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Receives negative base current to turn on PNP conduction; requires current-limiting resistor in series with driver. |
| 2 (Collector) | Main current sink path | Connected to negative supply rail in typical Class-AB output stage; electrically isolated from case via TO-3P construction. |
| 3 (Emitter) | Main current source path | Typically tied to load or output node; polarity reversal relative to NPN devices enables complementary push-pull topology. |
Key Features
| Feature | Design Value |
|---|---|
| Wide Safe Operating Area (SOA) | Enables reliable operation under pulsed overloads and reactive loads without secondary breakdown. |
| High Gain Linearity | Minimizes harmonic distortion in audio output stages, supporting THD <0.1% in well-biased designs. |
| Complementary Pairing | Designed as direct complement to FJA4313 (NPN), simplifying matched push-pull amplifier layout and thermal tracking. |
| Thermal & Electrical SPICE Models | Available for accurate simulation of transient thermal behavior and large-signal AC performance. |
| Multiple Package Options | Same die available in TO-264 (150W), TO-220 (80W), and TO-220F (50W) - enables scalable power design. |
Applications
| High-Fidelity Audio Output Amplifier | General-Purpose Power Amplifier |
|---|---|
Use Scenario: Final output stage in stereo integrated amplifiers delivering 100W+ per channel into 4–8Ω loads. IC Role / Device Role / Timing Role: PNP output transistor in complementary Class-AB topology, sourcing current to speaker load during negative half-cycle. Use Value: Low VCE(sat) and high SOA ensure clean clipping behavior and sustained power delivery without thermal runaway. |
Use Scenario: Linear regulator pass element or motor drive switch in industrial control systems requiring precise analog current control. IC Role / Device Role / Timing Role: High-current, high-voltage linear pass transistor regulating DC bus voltage or driving inductive solenoid loads. Use Value: -250V rating and -17A capability support 200V/15A applications with margin; RθJC=0.96°C/W enables compact heatsink integration. |
| Discrete Audio Driver Stage | Push-Pull Power Supply Regulator |
Use Scenario: Driver stage preceding output transistors in high-end AV receivers, handling 2–5A peak currents before final amplification. IC Role / Device Role / Timing Role: Medium-power PNP buffer providing high hFE and fast fT to drive heavy capacitive loads of output stage bases. Use Value: 30MHz fT ensures full-audio-band fidelity; R-grade hFE consistency improves matching with complementary FJA4313 drivers. |
Use Scenario: Series pass element in programmable lab power supplies delivering 0–60V/0–10A with low-noise regulation. IC Role / Device Role / Timing Role: Linear regulator pass transistor dissipating up to 130W during worst-case dropout conditions. Use Value: Wide SOA and 130W rating allow safe operation at high VCE × IC products; TO-3P isolation prevents ground loop issues in floating outputs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SA1962RTU | Same die, identical electrical specs, same TO-3P package and R-grade hFE bin; legacy Fairchild marking A1962R. | No functional difference; used interchangeably where legacy part numbering is maintained in BOMs. | Select when maintaining historical design documentation or sourcing from legacy inventory channels. |
| FJA4213OTU | Same die and package, but O-grade hFE (80–160 at IC=-1A), higher gain spread than R-grade (55–110). | Suitable for gain-critical bias networks where tighter hFE tolerance is not required; may require re-biasing in precision circuits. | Select when higher nominal hFE is preferred and circuit tolerates wider gain variation across temperature. |
Compared with 2SA1962RTU and FJA4213OTU, the FJA4213RTU offers guaranteed R-grade hFE consistency (55–110), making it optimal for matched complementary amplifier designs where predictable gain matching with FJA4313 is essential - unlike O-grade variants or legacy-marked equivalents.
Availability
FJA4213RTU is available at Aetrix Electronics and suitable for high-fidelity audio output amplifiers, general-purpose power amplifiers, and discrete audio driver stages requiring stable component supply and long-term production continuity.
Supply support for FJA4213RTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, cloud computing, and consumer applications.
The FJA4213RTU belongs to ON Semiconductor's high-voltage, high-current discrete bipolar transistor product line, engineered specifically for linear audio amplification, industrial power control, and robust analog signal conditioning where SOA integrity and thermal reliability are critical.
FAQ
What is the maximum continuous collector current rating for FJA4213RTU?
The FJA4213RTU has a maximum continuous collector current (IC) rating of -17A at TC = 25°C. This rating assumes proper heatsinking to maintain case temperature within limits; derating applies above 25°C per the 1.04 W/°C thermal derating curve specified in the datasheet. Actual usable current depends on thermal design and SOA constraints.
Does FJA4213RTU have a complementary NPN transistor?
Yes, the FJA4213RTU is explicitly designed as the PNP complement to the NPN FJA4313. Both share matched voltage, current, SOA, and thermal characteristics, enabling symmetrical push-pull amplifier topologies with balanced thermal and electrical performance. The datasheet confirms this pairing in the Features section.
What is the hFE classification for FJA4213RTU?
The "RTU" suffix denotes R-grade hFE, meaning the FJA4213RTU is binned to a DC current gain range of 55–110 at VCE = -5V and IC = -1A. This tighter gain band supports consistent biasing in production audio amplifiers and reduces need for manual gain-matching during assembly.
Can FJA4213RTU be used in switching applications?
The FJA4213RTU is optimized for linear operation - its wide SOA, gain linearity, and thermal design prioritize analog fidelity over switching speed. While it can switch at low frequencies (<10kHz), its 30MHz fT and lack of specified switching times make it unsuitable for high-efficiency SMPS or RF switching; dedicated switching transistors are recommended instead.
What package type does FJA4213RTU use and is the case electrically isolated?
The FJA4213RTU uses the TO-3P package, a 3-pin through-hole metal-can variant with an electrically isolated collector tab. Per the datasheet package drawing and thermal characterization, the collector (Pin 2) is insulated from the metal case, enabling direct mounting to a common heatsink without shorting the collector node - critical for grounded-heatsink amplifier layouts.
FJA4213RTU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-3P-3, SC-65-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 17 A
- Voltage - Collector Emitter Breakdown (Max):
- 250 V
- Vce Saturation (Max) @ Ib, Ic:
- 3V @ 800mA, 8A
- Current - Collector Cutoff (Max):
- 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 55 @ 1A, 5V
- Power - Max:
- 130 W
- Frequency - Transition:
- 30MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-3P
FJA4213RTU FAQ
1.How can I place an order for FJA4213RTU through Aetrix?
Please submit a Request for Quotation (RFQ) for FJA4213RTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FJA4213RTU reliable?
The price and inventory of FJA4213RTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJA4213RTU is usually 5 days.
3.What payment methods are accepted for FJA4213RTU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJA4213RTU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FJA4213RTU?
FJA4213RTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FJA4213RTU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FJA4213RTU?
For technical support, including FJA4213RTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJA4213RTU requirements.
6.How does Aetrix verify that FJA4213RTU is sourced from the original manufacturer or authorized distributors?
All FJA4213RTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJA4213RTU meets industry standards.
7.What is the process for return or replacement of FJA4213RTU?
All FJA4213RTU units undergo pre-shipment inspection (PSI). If there is an issue with FJA4213RTU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FJA4213RTU part is unused and in its original packaging.
Return procedure for FJA4213RTU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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