onsemi FJA4313OTU

Overview

FJA4313OTU from ON Semiconductor is an NPN epitaxial silicon power transistor designed for high-fidelity audio output stages and general-purpose linear power amplification. It delivers IC = 17 A DC collector current, VCEO = 250 V breakdown voltage, PD = 130 W total device dissipation at TC = 25°C, fT = 30 MHz gain-bandwidth product, and operates reliably within TJ = –50°C to +150°C junction temperature range.

For engineers reviewing the FJA4313OTU datasheet, pinout, applications, or equivalent options, key selection considerations include safe operating area (SOA) robustness, hFE linearity at high current (hFE2 = 35–60 at IC = 7 A), low VCE(sat) = 0.4–3.0 V, thermal resistance RθJC = 0.96°C/W, and TO-3P package compatibility with heatsink mounting.

Technical Context

This discrete NPN bipolar junction transistor uses epitaxial base construction to achieve high-voltage blocking (250 V C-E and C-B), wide SOA for linear Class AB operation, and excellent gain linearity-critical for minimizing total harmonic distortion (THD) in audio amplifier output stages. Its 30 MHz fT supports stable high-frequency response up to mid-audio band without compensation instability.

The device is thermally optimized for case-mounted operation with RθJC = 0.96°C/W and a 130 W power rating at 25°C case temperature, derating linearly at 1.04 W/°C above that point. It is explicitly specified for complementary use with 2SA1962/FJA4213 PNP devices in push-pull configurations.

Key Specifications

Pinout & Package

FJA4313OTU is housed in a TO-3P (also known as TO-218) metal-can package with isolated collector tab, designed for direct heatsink mounting and high-power thermal management. The package features three leads: Base, Collector, Emitter - with Collector electrically connected to the metal case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with 2SC5242OTU, FJA4313OTU offers identical performance but reflects ON Semiconductor's post-integration part numbering; versus FJP5200, it provides 62.5% higher power dissipation and superior thermal coupling-critical for sustained high-current audio output stages.

Availability

FJA4313OTU is available at Aetrix Electronics and suitable for high-fidelity audio amplifiers, professional audio mixer output stages, and discrete power module replacements requiring stable component supply, consistent hFE binning (O grade), and TO-3P mechanical compatibility.

Supply support for FJA4313OTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensor, and logic solutions for automotive, industrial, cloud computing, and consumer markets.

FJA4313OTU belongs to ON Semiconductor's discrete power transistor portfolio, engineered specifically for high-linearity, high-reliability linear amplifier and power switching applications demanding rugged SOA and precise gain control.

FAQ

What is the package type and pin configuration of FJA4313OTU?

FJA4313OTU uses a TO-3P (TO-218) metal-can package with three terminals: Pin 1 is Base, Pin 2 is Collector (electrically connected to the case), and Pin 3 is Emitter. The isolated collector tab allows direct heatsink mounting with appropriate insulation when required by circuit grounding scheme.

What does the "OTU" suffix indicate in FJA4313OTU?

The "OTU" suffix denotes tube packaging and O-grade hFE binning (hFE1 = 80–160 at IC = 1 A, VCE = 5 V). This grading ensures tighter current gain distribution for improved matching in complementary output stages compared to R-grade (55–110) variants.

Is FJA4313OTU compatible with 2SC5242OTU in existing designs?

Yes, FJA4313OTU is a direct functional and mechanical replacement for 2SC5242OTU-same TO-3P package, identical absolute maximum ratings, electrical characteristics, and pinout. It originated from the Fairchild integration into ON Semiconductor and maintains full backward compatibility.

What is the safe operating area (SOA) limit for FJA4313OTU at 100 V VCE?

At VCE = 100 V, FJA4313OTU supports up to 10 A DC collector current and up to 100 A for single non-repetitive pulses (10 ms), per the SOA curve in the datasheet. Derating is required above TC = 25°C using the 1.04 W/°C thermal coefficient.

Does FJA4313OTU require external base resistors in amplifier designs?

Yes, FJA4313OTU requires externally calculated base drive resistors to establish proper quiescent current and prevent thermal runaway. Its hFE2 = 35–60 at IC = 7 A and VBE(on) = 1.0–1.5 V at that condition dictate resistor values based on driver stage output capability and desired bias point.