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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJAF4210OTU

Name: FJAF4210OTU
Brand: onsemi
SKU: FJAF4210OTU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FJAF4210OTU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-3P-3 Full Pack

Datasheet:: FJAF4210OTU.pdf

Description:: TRANS PNP 140V 10A TO-3PF

Quantity:: RFQ Add To RFQ list

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Product details

Overview

FJAF4210OTU from ON Semiconductor is a PNP epitaxial silicon power transistor designed for high-current audio amplifier output stages, featuring -140 V V_CEO, -10 A I_C, 80 W power dissipation at T_C=25°C, and 30 MHz f_T; used in Class AB push-pull audio final stages requiring wide SOA and thermal robustness.

For engineers reviewing the FJAF4210OTU datasheet, pinout, applications, or equivalent options, key selection considerations include safe operating area under pulsed conditions, h_FE classification (R/O/Y), V_CE(sat) at high current, junction-to-case thermal resistance (1.33°C/W), and complementarity with FJAF4310 in dual-transistor amplifier designs.

Technical Context

This device operates as a high-voltage, high-current PNP bipolar junction transistor optimized for linear audio power amplification. Its wide forward-bias safe operating area supports sustained operation at -5 A with V_CE ≤ -4 V and enables stable Class AB biasing without secondary breakdown limitations up to 100°C case temperature.

The TO-3PF package integrates a thermally efficient DAP-connected collector (Pin 2) and supports direct heatsink mounting. Electrical behavior is characterized by h_FE ranging 50–180 (depending on classification grade), low saturation voltage (-0.5 V at I_C=-5 A/I_B=-0.5 A), and 400 pF output capacitance at -10 V V_CB.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	-140 V - Maximum collector-emitter voltage before breakdown; defines usable rail voltage headroom in negative-rail amplifier outputs
I_C (DC)	-10 A - Continuous collector current capability; supports ≥50 W RMS audio output into 4 Ω loads with proper heatsinking
P_C @ T_C=25°C	80 W - Maximum steady-state power dissipation; requires thermal interface resistance ≤0.6°C/W to maintain T_J ≤150°C at full load
f_T	30 MHz - Current gain bandwidth product; ensures adequate open-loop gain margin up to 20 kHz audio band with phase stability
V_CE(sat)	-0.5 V @ I_C=-5 A, I_B=-0.5 A - Low saturation voltage minimizes conduction loss and thermal stress in output stage quiescent operation
R_θJC	1.33°C/W - Junction-to-case thermal resistance; enables direct thermal coupling to heatsink without insulating pads in most implementations
h_FE range	50–180 - DC current gain spread across R/O/Y classifications; impacts base drive design and matching requirements in complementary pairs

Pinout & Package

Package: TO-3PF (JEITA SC94 compliant), metal can with isolated base (Pin 1), DAP-connected collector (Pin 2), and emitter (Pin 3); designed for mechanical and thermal mounting to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input terminal	Receives base current to modulate collector current; electrically isolated from case for flexible bias network placement
2 (Collector)	Main power output terminal	Internally connected to the DAP (die attach pad); must be electrically isolated from heatsink unless using conductive thermal interface
3 (Emitter)	Reference/return terminal	Serves as common reference for emitter-follower or grounded-emitter configurations; typically tied to negative supply rail in audio output stages

Key Features

Feature	Design Value
Wide Forward-Bias SOA	Supports continuous operation at -5 A / -4 V without secondary breakdown, enabling reliable Class AB audio output staging
High Power Dissipation	80 W rating at T_C=25°C allows >30 W clean audio output into 8 Ω with conservative thermal design
Complementary Pairing	Engineered as direct PNP complement to NPN FJAF4310, simplifying matched push-pull amplifier layout and thermal tracking
Low V_CE(sat)	-0.5 V at rated I_C/I_B reduces conduction loss and improves efficiency in high-current output stages

Applications

High-Fidelity Audio Amplifiers	Professional PA Output Stages
Use Scenario: Final output stage in discrete Class AB stereo amplifiers delivering 20–50 W per channel into 4–8 Ω loads. IC Role / Device Role / Timing Role: PNP power switching element in push-pull pair, conducting during negative half-cycle of audio waveform. Use Value: Wide SOA and -140 V V_CEO prevent clipping and breakdown under reactive speaker loads and transient peaks.	Use Scenario: High-reliability output stage in commercial 100 V line distributed audio systems driving multiple loudspeakers. IC Role / Device Role / Timing Role: High-current PNP switch in transformer-coupled or constant-voltage output topology. Use Value: 80 W power rating and 1.33°C/W R_θJC enable stable operation at elevated ambient temperatures in rack-mounted enclosures.
Industrial Motor Drive Pre-Drivers	DC Power Supply Pass Elements
Use Scenario: Linear pre-driver for H-bridge gate control in low-noise servo motor controllers requiring precise current regulation. IC Role / Device Role / Timing Role: High-gain, high-voltage PNP current source controlling MOSFET gate charge/discharge timing. Use Value: 30 MHz f_T and stable h_FE ensure accurate current mirroring and fast response to PWM edge transitions.	Use Scenario: Series pass transistor in adjustable linear DC power supplies delivering up to ±15 V / 5 A. IC Role / Device Role / Timing Role: Voltage-regulated current sink regulating output voltage via feedback-controlled base bias. Use Value: -10 A I_C and -200 V V_CBO support high-input-voltage operation with margin against line transients.

High-Fidelity Audio Amplifiers

Professional PA Output Stages

Use Scenario: Final output stage in discrete Class AB stereo amplifiers delivering 20–50 W per channel into 4–8 Ω loads.

IC Role / Device Role / Timing Role: PNP power switching element in push-pull pair, conducting during negative half-cycle of audio waveform.

Use Value: Wide SOA and -140 V V_CEO prevent clipping and breakdown under reactive speaker loads and transient peaks.

Use Scenario: High-reliability output stage in commercial 100 V line distributed audio systems driving multiple loudspeakers.

IC Role / Device Role / Timing Role: High-current PNP switch in transformer-coupled or constant-voltage output topology.

Use Value: 80 W power rating and 1.33°C/W R_θJC enable stable operation at elevated ambient temperatures in rack-mounted enclosures.

Industrial Motor Drive Pre-Drivers

DC Power Supply Pass Elements

Use Scenario: Linear pre-driver for H-bridge gate control in low-noise servo motor controllers requiring precise current regulation.

IC Role / Device Role / Timing Role: High-gain, high-voltage PNP current source controlling MOSFET gate charge/discharge timing.

Use Value: 30 MHz f_T and stable h_FE ensure accurate current mirroring and fast response to PWM edge transitions.

Use Scenario: Series pass transistor in adjustable linear DC power supplies delivering up to ±15 V / 5 A.

IC Role / Device Role / Timing Role: Voltage-regulated current sink regulating output voltage via feedback-controlled base bias.

Use Value: -10 A I_C and -200 V V_CBO support high-input-voltage operation with margin against line transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD4210G	TO-263 package, lower P_C (50 W), R_θJC = 2.5°C/W, same V_CEO/I_C ratings	Surface-mount implementation; limited thermal mass for short-duration peak loads	Select when board space constraints prohibit through-hole TO-3PF and thermal management uses PCB copper planes
2SA1943	Higher h_FE (70–140 min), identical TO-3PF package, V_CEO = -230 V, f_T = 30 MHz	Enhanced voltage margin for ±100 V rails; tighter h_FE binning aids matched pair selection	Select when designing for higher bus voltages or requiring tighter current gain matching with complementary NPN

Compared with FJAF4210OTU, MJD4210G trades thermal performance for SMT compatibility, while 2SA1943 offers greater voltage headroom and more consistent h_FE-both require revalidation of SOA derating curves and base drive network values.

Availability

FJAF4210OTU is available at Aetrix Electronics and suitable for high-fidelity audio amplifiers, professional PA systems, industrial motor drive pre-drivers, and linear DC power supply designs requiring stable component supply and long-term obsolescence planning.

Supply support for FJAF4210OTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensor, and logic solutions for automotive, industrial, cloud computing, and consumer applications.

The FJAF4210OTU belongs to ON Semiconductor's legacy Fairchild power bipolar transistor family, engineered specifically for high-fidelity linear audio output stages and high-current linear regulation where SOA integrity and thermal reliability are critical.

FAQ

What is the maximum continuous collector current rating for FJAF4210OTU?

The FJAF4210OTU has a maximum DC collector current rating of -10 A at T_C = 25°C. Operation at this current requires strict adherence to the SOA curve and thermal management to limit junction temperature to 150°C. Derating is mandatory above 25°C case temperature per the power derating curve in the datasheet. The FJAF4210OTU must not be operated beyond its specified safe operating area limits under any condition.

Does FJAF4210OTU have a pin-compatible NPN complement?

Yes, the FJAF4210OTU is explicitly designed as the PNP complement to the NPN FJAF4310. Both share identical TO-3PF packaging, pinout (Base–Collector–Emitter), thermal characteristics, and voltage/current ratings, enabling matched push-pull amplifier layouts with symmetrical thermal and electrical behavior. The FJAF4210OTU and FJAF4310 are intended for use as a complementary pair in Class AB output stages.

What is the typical h_FE range for FJAF4210OTU and how is it classified?

The FJAF4210OTU is offered in three h_FE classifications: R (50–100), O (70–140), and Y (90–180), measured at V_CE = -4 V and I_C = -3 A. This binning allows designers to select units with predictable current gain for matched pair assembly or precise bias network design. The FJAF4210OTU's h_FE variation directly affects base drive requirements and quiescent current stability in linear amplifier applications.

Can FJAF4210OTU be used in switching applications?

The FJAF4210OTU is optimized for linear operation-not switching-and lacks specified turn-on/turn-off times or storage time parameters. Its wide SOA and low V_CE(sat) support quasi-linear or Class G/H output topologies, but it is not characterized for hard-switching duty cycles. For true switching applications, dedicated high-speed bipolar or MOSFET devices with documented switching waveforms should be selected instead of the FJAF4210OTU.

What is the thermal resistance from junction to case for FJAF4210OTU?

The FJAF4210OTU has a specified junction-to-case thermal resistance (R_θJC) of 1.33°C/W, measured from the die junction to the metal case surface. This value assumes proper mounting to a flat, smooth heatsink with recommended torque and thermal interface material. Exceeding the 1.33°C/W value due to poor mounting will cause premature thermal shutdown or parametric shift. The FJAF4210OTU's thermal performance is integral to its 80 W power rating.

FJAF4210OTU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-3P-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 10 A

Voltage - Collector Emitter Breakdown (Max):: 140 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 500mA, 5A

Current - Collector Cutoff (Max):: 10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 70 @ 3A, 4V

Power - Max:: 80 W

Frequency - Transition:: 30MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3PF

FJAF4210OTU FAQ

1.How can I place an order for FJAF4210OTU through Aetrix?

Please submit a Request for Quotation (RFQ) for FJAF4210OTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJAF4210OTU reliable?

The price and inventory of FJAF4210OTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJAF4210OTU is usually 5 days.

3.What payment methods are accepted for FJAF4210OTU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJAF4210OTU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJAF4210OTU?

FJAF4210OTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJAF4210OTU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJAF4210OTU?

For technical support, including FJAF4210OTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJAF4210OTU requirements.

6.How does Aetrix verify that FJAF4210OTU is sourced from the original manufacturer or authorized distributors?

All FJAF4210OTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJAF4210OTU meets industry standards.

7.What is the process for return or replacement of FJAF4210OTU?

All FJAF4210OTU units undergo pre-shipment inspection (PSI). If there is an issue with FJAF4210OTU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJAF4210OTU part is unused and in its original packaging.

Return procedure for FJAF4210OTU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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