onsemi FJAF4210YTU
- Part No.:
- FJAF4210YTU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-3P-3 Full Pack
- Datasheet:
-
FJAF4210YTU.pdf
- Description:
- TRANS PNP 140V 10A TO-3PF
- Quantity:
- Payment:

- Shipping:

Inventory:2,160
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
FJAF4210YTU from Fairchild Semiconductor is a PNP epitaxial silicon power transistor designed for high-current audio amplifier output stages, featuring -140 V VCEO, -10 A IC, 80 W PC at TC=25°C, and 30 MHz fT; used in Class-AB linear audio power amplifiers requiring robust SOA and low saturation voltage.
For engineers reviewing the FJAF4210YTU datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area under pulsed conditions, hFE classification (R/O/Y), VCE(sat) at high IC, thermal resistance (1.33°C/W), and complementary pairing with FJAF4310.
Technical Context
This device operates as a high-voltage, high-current PNP bipolar junction transistor with DC current gain (hFE) ranging 50–180 depending on classification grade, optimized for linear amplification rather than switching. Its wide forward-bias safe operating area supports sustained operation at -5 A with -4 V VCE and elevated junction temperatures up to 150°C.
Thermal performance is defined by RθJC = 1.33°C/W and derating curve down to zero dissipation at 175°C case temperature. The TO-3PF metal package enables direct heatsink mounting and supports pulse currents exceeding DC ratings when limited by thermal time constants.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | -140 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines usable rail voltage headroom in amplifier output stage. |
| IC (DC) | -10 A - Continuous collector current rating; sets maximum quiescent and signal peak current capability in linear operation. |
| PC @ TC=25°C | 80 W - Maximum steady-state power dissipation at case temperature of 25°C; requires heatsinking for practical operation above ambient. |
| hFE @ VCE=-4V, IC=-3A | 50–180 - DC current gain range across R/O/Y classifications; determines base drive requirements and bias stability in amplifier circuits. |
| VCE(sat) @ IC=-5A, IB=-0.5A | -0.5 V - Low saturation voltage ensures minimal voltage drop and power loss during conduction in Class-AB push-pull outputs. |
| fT | 30 MHz - Current gain bandwidth product; supports full-audio frequency response with margin for stability in feedback designs. |
| RθJC | 1.33 °C/W - Junction-to-case thermal resistance; enables calculation of junction temperature rise under known heatsink conditions. |
Pinout & Package
Package: TO-3PF metal can with insulated base, designed for mechanical mounting to heatsinks and high-power thermal management. Dimensions conform to JEDEC TO-3PF standard with 3-terminal layout and integrated mounting flange.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control electrode | Receives base current to regulate collector current flow; requires current-limited drive due to -1.5 A max IB rating. |
| 2 (Collector) | Main current sink | Connected to negative supply rail in PNP output stage; carries full load current and must be thermally coupled to heatsink. |
| 3 (Emitter) | Current source terminal | Typically tied to output node or speaker return; serves as reference for base-emitter biasing and feedback sensing points. |
Key Features
| Feature | Design Value |
|---|---|
| High Safe Operating Area (SOA) | Supports linear operation at -10 A and -140 V with single-pulse capability up to 100 ms, enabling robust Class-AB audio output without secondary breakdown. |
| Complementary Pairing | Designed as PNP counterpart to NPN FJAF4310, allowing matched thermal and electrical characteristics in push-pull amplifier configurations. |
| Low VCE(sat) | -0.5 V at -5 A collector current reduces conduction loss and improves efficiency in high-power analog output stages. |
| Wide hFE Classification Range | R/O/Y grades (50–100 / 70–140 / 90–180) allow precise matching of transistors within amplifier channels for minimized DC offset and distortion. |
Applications
| Hi-Fi Audio Amplifier Output Stage | Professional PA System Power Module |
|---|---|
Use Scenario: Final output stage in discrete Class-AB stereo amplifier delivering 100+ W per channel into 4 Ω loads. IC Role / Device Role / Timing Role: PNP power transistor conducting negative half-cycle current in push-pull pair with complementary NPN device. Use Value: Wide SOA and low VCE(sat) minimize thermal runaway risk and improve damping factor under dynamic load conditions. | Use Scenario: High-reliability power section in touring-grade 500 W+ loudspeaker management systems. IC Role / Device Role / Timing Role: Primary output switch in linear power amplifier module handling continuous RMS power and transient peaks. Use Value: 150°C maximum junction temperature and 1.33°C/W RθJC support stable operation under forced-air cooling with minimal derating. |
| Studio Monitor Power Amplifier | Industrial Audio Signal Distribution |
Use Scenario: Precision near-field monitor amplifier requiring low THD+N and tight DC offset control across temperature. IC Role / Device Role / Timing Role: Matched PNP device in differential input/output stage with hFE-selected R/O/Y grade for symmetry. Use Value: Tight hFE classification bands enable manual or automated binning to achieve <±2 mV input offset and <0.01% THD at full power. | Use Scenario: Distributed audio system powering multiple zones in commercial buildings with centralized amplification. IC Role / Device Role / Timing Role: Output transistor in modular amplifier card supporting parallel operation and hot-swap redundancy. Use Value: TO-3PF package allows standardized heatsink interface and mechanical interchangeability across amplifier modules for field serviceability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP high-power audio transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJE15034 | VCEO = -150 V, IC = -8 A, PC = 50 W, RθJC = 2.0°C/W - lower power rating and higher thermal resistance. | Suitable for lower-power amplifiers (<75 W/channel); less margin for sustained high-current pulses. | Select when lower cost and adequate SOA at reduced power levels are prioritized over FJAF4210YTU's 80 W rating. |
| 2SA1943 | VCEO = -230 V, IC = -15 A, PC = 150 W, fT = 30 MHz - higher voltage/current ratings but larger TO-3 package footprint. | Used in ultra-high-fidelity amplifiers requiring extended voltage headroom and higher thermal mass. | Choose when design requires >-140 V VCEO or >80 W dissipation; verify PCB cutout and heatsink compatibility with TO-3 vs TO-3PF. |
Compared with MJE15034 and 2SA1943, FJAF4210YTU offers balanced trade-offs: superior SOA and thermal performance versus MJE15034, while maintaining smaller TO-3PF footprint and tighter hFE grading than 2SA1943-ideal for space-constrained, high-fidelity audio designs needing predictable linearity.
Availability
FJAF4210YTU is available at Aetrix Electronics and suitable for high-fidelity audio amplifiers, professional PA systems, studio monitor power stages, and industrial audio distribution requiring stable component supply and long-term manufacturability.
Supply support for FJAF4210YTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.
The FJAF4210YTU belongs to Fairchild's high-power audio transistor family, engineered specifically for linear amplifier output stages demanding wide SOA, low saturation voltage, and precise hFE matching across temperature.
FAQ
What is the maximum continuous collector current rating for FJAF4210YTU?
The FJAF4210YTU has a maximum continuous collector current (IC) rating of -10 A at TA = 25°C. This rating assumes proper heatsinking and adherence to the derating curve shown in Figure 7 of the datasheet. Operation above this value requires pulse testing conditions and strict thermal monitoring to avoid junction overheating or secondary breakdown.
Does FJAF4210YTU have a specified hFE classification, and how does it affect circuit design?
Yes, FJAF4210YTU is offered in R/O/Y hFE classifications (50–100 / 70–140 / 90–180). This binning enables precise matching of PNP devices in push-pull amplifier stages, directly reducing DC offset and improving harmonic cancellation. Designers select grade based on required bias stability and symmetry with complementary NPN FJAF4310 units.
What package type does FJAF4210YTU use, and is it insulated?
FJAF4210YTU uses the TO-3PF metal package, which features an electrically insulated base via molded plastic coating. This insulation eliminates the need for mounting washers or mica spacers when attaching to grounded heatsinks, simplifying thermal design and improving reliability in high-voltage audio applications.
How does the Safe Operating Area (SOA) of FJAF4210YTU compare to standard power transistors?
The FJAF4210YTU features a wide forward-bias SOA that supports operation at -10 A and -140 V under pulsed conditions, significantly exceeding typical SOA limits of general-purpose power transistors. This enables reliable Class-AB linear amplification without secondary breakdown, even during high-dynamic-range musical transients.
Is FJAF4210YTU still in active production, and what is its lifecycle status?
FJAF4210YTU is marked as Full Production in Fairchild's documentation (Rev. B0, October 2009), with no obsolescence notice issued prior to Fairchild's acquisition by ON Semiconductor. While not currently listed in ON Semi's active portfolio, Aetrix Electronics maintains verified legacy stock with full traceability and supports long-term supply for industrial audio programs.
FJAF4210YTU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-3P-3 Full Pack
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 10 A
- Voltage - Collector Emitter Breakdown (Max):
- 140 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 500mA, 5A
- Current - Collector Cutoff (Max):
- 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 90 @ 3A, 4V
- Power - Max:
- 80 W
- Frequency - Transition:
- 30MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-3PF
FJAF4210YTU FAQ
1.How can I place an order for FJAF4210YTU through Aetrix?
Please submit a Request for Quotation (RFQ) for FJAF4210YTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FJAF4210YTU reliable?
The price and inventory of FJAF4210YTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJAF4210YTU is usually 5 days.
3.What payment methods are accepted for FJAF4210YTU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJAF4210YTU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FJAF4210YTU?
FJAF4210YTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FJAF4210YTU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FJAF4210YTU?
For technical support, including FJAF4210YTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJAF4210YTU requirements.
6.How does Aetrix verify that FJAF4210YTU is sourced from the original manufacturer or authorized distributors?
All FJAF4210YTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJAF4210YTU meets industry standards.
7.What is the process for return or replacement of FJAF4210YTU?
All FJAF4210YTU units undergo pre-shipment inspection (PSI). If there is an issue with FJAF4210YTU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FJAF4210YTU part is unused and in its original packaging.
Return procedure for FJAF4210YTU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FJAF4210YTU Tags

-
MMBT3906LT1G
onsemi

-
MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

-
MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

