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onsemi FJAFS1510ATU
- Part No.:
- FJAFS1510ATU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-3P-3 Full Pack
- Datasheet:
-
FJAFS1510ATU.pdf
- Description:
- TRANS NPN 750V 6A TO-3PF
- Quantity:
- Payment:
- Shipping:
Inventory:240
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Product details
Overview
FJAFS1510ATU from ON Semiconductor (formerly Fairchild) is an ESBC™-rated NPN power transistor designed for high-voltage, high-speed switching in cascode configurations with a low-voltage MOSFET. It delivers 6 A DC collector current at up to 750 V VCEO, 1550 V VCBO, and 0.426 V collector-source on-voltage (VCS(ON)) under ESBC operation with hFE = 3. It is used in smart meters, HV industrial power supplies, and ignition drivers where avalanche ruggedness and dv/dt immunity are critical.
For engineers reviewing the FJAFS1510ATU datasheet, pinout, applications, or equivalent options, key selection criteria include its 1550 V reverse-bias SOA, TO-3PF package thermal resistance of 2.08 °C/W, absence of Miller capacitance in ESBC mode, 27 pF output capacitance at 200 V, and verified 15.4 MHz fT bandwidth - all essential for reliable high-voltage switching design validation.
Technical Context
The FJAFS1510ATU operates as the bipolar half of an Emitter-Switched Bipolar/MOSFET (ESBC™) cascode, where the integrated NPN handles high-voltage blocking while the companion MOSFET (e.g., FDC655) provides low-loss, low-capacitance gate control. Its square RBSOA supports stable operation under inductive switching stress without snubbers up to 1550 V.
It features no parasitic transistors and zero Miller capacitance in ESBC configuration, eliminating false triggering from high dv/dt transients. The device uses a dedicated high-voltage bipolar process and achieves 12.5 ns inductive current fall time (Itf) at 5 A with hFE = 5, confirming fast turn-off capability in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCBO | 1550 V - Maximum collector-base voltage before breakdown; enables direct use in 1200 V-class systems without derating. |
| VCEO | 750 V - Sustains 750 V across collector-emitter in common-emitter mode; defines safe operating ceiling for standard switching applications. |
| IC (DC) | 6 A - Continuous collector current rating; supports sustained 30 W dissipation at TC = 25°C with RθjC = 2.08 °C/W. |
| VCS(ON) | 0.426 V - Measured collector-source on-voltage in ESBC configuration at IC = 6 A, IB = 2 A, hFE = 3; determines conduction loss in cascode topology. |
| Cob | 27 pF - Output capacitance at VCB = 200 V; low value reduces switching energy and improves high-frequency efficiency. |
| fT | 15.4 MHz - Current gain bandwidth product at IC = 0.1 A, VCE = 10 V; confirms sufficient gain margin for driver interface stability. |
| RθjC | 2.08 °C/W - Junction-to-case thermal resistance; allows accurate junction temperature estimation for heatsink sizing in TO-3PF mounting. |
Pinout & Package
Package: TO-3PF - High-voltage molded package with isolated base tab (Pin 1), collector-connected DAP (Pin 2), and emitter (Pin 3); compliant with JEITA SC94 standard and rated for ≥1550 V isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Low-impedance base drive node; requires external current-limited driver due to hFE variation (7–15) across operating range. |
| 2 (Collector) | High-voltage power output | Internally connected to die attach pad (DAP); must be electrically isolated from heatsink unless referenced to system ground. |
| 3 (Emitter) | Power return / reference node | Serves as common emitter for NPN operation and source node for ESBC cascode; carries full load current and must be routed with low-inductance layout. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | Rated for repetitive unclamped inductive switching (UIS) up to 1550 V without failure - eliminates need for external clamping in motor/ignition drivers. |
| No Miller capacitance in ESBC mode | Eliminates gate-drain feedback path during switching, preventing spurious turn-on from high dv/dt transients in HV industrial environments. |
| Square Reverse-Bias SOA (RBSOA) | Supports simultaneous high voltage (1550 V) and high current (up to 6 A) during turn-off - enables robust snubberless operation in SMPS and smart breakers. |
| Low driving capacitance | Input capacitance Ciss = 470 pF at VCS = 25 V - reduces gate driver power requirement and simplifies driver IC selection for ESBC gate control. |
| Rugged HV bipolar process | Manufactured in dedicated high-voltage process with no parasitic transistors - ensures immunity to latch-up and static dv/dt failures in noisy grid-connected equipment. |
Applications
| Smart Meter Power Switching | Industrial HV SMPS |
|---|---|
|
Use Scenario: Solid-state relay and load switching in ANSI C12.20-compliant electricity meters handling 100–1000 V AC line transients. IC Role / Device Role / Timing Role: High-voltage NPN switch in ESBC cascode, providing galvanically isolated, avalanche-hardened main power path control. Use Value: Enables 1550 V VCBO rating to withstand lightning surges and neutral faults without snubbers, reducing BOM count and improving long-term reliability. |
Use Scenario: Primary-side switching in 30–60 W wide-input-range offline flyback converters for factory automation controllers. IC Role / Device Role / Timing Role: High-voltage power transistor in quasi-resonant topology, driven by off-the-shelf controller ICs via ESBC gate interface. Use Value: Achieves 15.4 MHz fT and 12.5 ns Itf at 5 A, enabling >150 kHz operation with minimal switching loss and no Miller-induced timing jitter. |
| Ignition Driver for Gas Turbines | Smart Breaker Load Control |
|
Use Scenario: High-energy spark generation in turbine ignition systems requiring sub-microsecond switching and 1 kV+ hold-off. IC Role / Device Role / Timing Role: Fast-turn-off NPN switch in cascode with low-voltage MOSFET, delivering precise pulse timing and high peak current. Use Value: Delivers 115 ns inductive current fall time (Itf) at 1 A and 12.5 ns at 5 A - ensures consistent spark energy delivery across temperature and aging. |
Use Scenario: Solid-state circuit interruption in DIN-rail-mounted smart breakers for data center PDUs and renewable energy inverters. IC Role / Device Role / Timing Role: Main power switch in bidirectional HV blocking stage, operating in linear and saturated modes for fault detection and trip control. Use Value: Square RBSOA and -55°C to +125°C operating range ensure fail-safe operation during overcurrent events and ambient temperature extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage NPN switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ST15NF50 | N-channel MOSFET (500 V, 15 A); lacks bipolar ruggedness and avalanche rating; higher RDS(on) (0.3 Ω) increases conduction loss at high current. | Not suitable for ESBC cascode; requires external snubber in 750 V+ inductive loads; limited to lower dv/dt environments. | Select only if gate-drive simplicity outweighs need for avalanche hardness and high-voltage SOA. |
| IXGH20N120 | IGBT (1200 V, 20 A); higher VCE(sat) (2.5 V) and slower switching (tf ≈ 150 ns); no RBSOA guarantee above 1000 V. | Used in medium-frequency motor drives; unsuitable for >150 kHz SMPS due to tail current and thermal runaway risk. | Prefer for high-current, low-frequency applications where switching speed is secondary to current capacity. |
Compared with ST15NF50 and IXGH20N120, the FJAFS1510ATU uniquely combines 1550 V VCBO, 12.5 ns Itf, and square RBSOA in a single TO-3PF device - making it the only option among the three qualified for snubberless, avalanche-rated, high-frequency HV switching in smart grid infrastructure.
Availability
FJAFS1510ATU is available at Aetrix Electronics and suitable for smart meter design, industrial HV SMPS development, and ignition system prototyping requiring stable component supply and long-term lifecycle support.
Supply support for FJAFS1510ATU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor (formerly Fairchild Semiconductor) is a global leader in high-performance silicon solutions for automotive, industrial, cloud computing, and IoT applications, with core expertise in power management and analog semiconductors.
The FJAFS1510ATU belongs to Fairchild's ESBC™ (Emitter-Switched Bipolar Cascode) product line, engineered specifically for high-reliability, high-voltage switching in smart grid, industrial power, and ignition systems where avalanche hardness and dv/dt immunity are non-negotiable.
FAQ
What is the maximum collector-emitter voltage rating for the FJAFS1510ATU?
The FJAFS1510ATU has a VCEO rating of 750 V - the maximum voltage sustainable between collector and emitter in common-emitter configuration at TA = 25°C. This rating is distinct from its 1550 V VCBO (collector-base) rating and defines its safe operating ceiling in standard switching topologies. Exceeding 750 V in VCE risks premature breakdown even if VCB remains within limit.
Does the FJAFS1510ATU require a snubber circuit in inductive switching applications?
No - the FJAFS1510ATU is rated for snubberless operation up to 1550 V in ESBC configuration, validated by its square Reverse-Bias Safe Operating Area (RBSOA) and avalanche energy rating. Its lack of Miller capacitance and immunity to dv/dt-induced false triggering eliminate the need for RC snubbers in properly designed smart meter, SMPS, and ignition circuits per the datasheet test conditions.
What is the thermal resistance from junction to case for the FJAFS1510ATU?
The FJAFS1510ATU has a specified RθjC of 2.08 °C/W, measured under standard conditions (TA = 25°C). This value enables accurate junction temperature calculation when mounted on a heatsink with known thermal interface resistance, supporting thermal design for continuous 6 A operation at elevated ambient temperatures.
Can the FJAFS1510ATU be used as a standalone NPN transistor without the ESBC MOSFET?
Yes - the FJAFS1510ATU functions as a discrete NPN power transistor with hFE = 7–15, VCE(sat) = 0.5 V at 6 A/1.5 A, and full 750 V VCEO rating. However, its ESBC-optimized features - including no Miller capacitance and enhanced RBSOA - are only fully realized when paired with a compatible low-voltage MOSFET such as the FDC655 as documented in the FJAFS1510ATU datasheet.
What is the typical collector output capacitance (Cob) of the FJAFS1510ATU?
The FJAFS1510ATU exhibits a typical Cob of 27 pF when measured at VCB = 200 V, IE = 0, and f = 1 MHz. This low output capacitance directly contributes to reduced switching losses and improved efficiency in high-frequency (>100 kHz) applications such as resonant converters and fast ignition drivers.
FJAFS1510ATU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- ESBC™
- Package/Case:
- TO-3P-3 Full Pack
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 6 A
- Voltage - Collector Emitter Breakdown (Max):
- 750 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 1.5A, 6A
- Current - Collector Cutoff (Max):
- 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 7 @ 3A, 5V
- Power - Max:
- 60 W
- Frequency - Transition:
- 15.4MHz
- Operating Temperature:
- -55°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-3PF
FJAFS1510ATU FAQ
1.How can I place an order for FJAFS1510ATU through Aetrix?
Please submit a Request for Quotation (RFQ) for FJAFS1510ATU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FJAFS1510ATU reliable?
The price and inventory of FJAFS1510ATU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJAFS1510ATU is usually 5 days.
3.What payment methods are accepted for FJAFS1510ATU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJAFS1510ATU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FJAFS1510ATU?
FJAFS1510ATU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FJAFS1510ATU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FJAFS1510ATU?
For technical support, including FJAFS1510ATU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJAFS1510ATU requirements.
6.How does Aetrix verify that FJAFS1510ATU is sourced from the original manufacturer or authorized distributors?
All FJAFS1510ATU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJAFS1510ATU meets industry standards.
7.What is the process for return or replacement of FJAFS1510ATU?
All FJAFS1510ATU units undergo pre-shipment inspection (PSI). If there is an issue with FJAFS1510ATU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FJAFS1510ATU part is unused and in its original packaging.
Return procedure for FJAFS1510ATU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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