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onsemi FJB3307DTM

Part No.:
FJB3307DTM
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixFJB3307DTM.pdf
Description:
TRANS NPN 400V 8A TO263
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,954

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Product details

Overview

FJB3307DTM from ON Semiconductor (formerly Fairchild) is a high-voltage, fast-switching NPN power transistor in D2-PAK package, rated for 400 V VCEO, 8 A DC collector current, and 80 W case-power dissipation. It integrates a built-in collector-emitter diode and delivers 3.0 μs storage time and 0.7 μs fall time under resistive load, making it suitable for electronic ballasts and switch-mode power supplies.

For engineers reviewing the FJB3307DTM datasheet, pinout, applications, or equivalent options, key selection criteria include its 400 V blocking capability, 1.56 °C/W junction-to-case thermal resistance, integrated anti-parallel diode, and suitability for high-frequency hard-switched topologies in lighting and AC-DC conversion.

Technical Context

The FJB3307DTM employs a PowerTrench®-derived vertical NPN structure optimized for high-voltage switching with low saturation voltage and controlled minority-carrier lifetime. Its internal diode enables self-commutated operation in flyback and resonant converters without external freewheeling components.

Designed for operation up to 150 °C junction temperature, it supports pulsed collector currents up to 16 A and base drive up to 8 A peak, with hFE ranging from 5–40 depending on IC and VCE, enabling robust gate/base driver interface design in high-reliability industrial power stages.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO400 V - Enables use in 230 VAC offline SMPS primary-side switching with sufficient margin against transients.
IC (DC)8 A - Supports continuous output power up to ~300 W in single-ended forward or flyback topologies.
Rθjc1.56 °C/W - Allows direct mounting to heatsink for high-power density designs without thermal derating below 100 W.
tSTG / tF3.0 μs / 0.7 μs - Enables stable operation at switching frequencies up to 100 kHz in hard-switched applications.
VCE(sat)2.0 V @ IC = 5 A, IB = 1 A - Limits conduction loss to <10 W at full load, critical for thermal management in enclosed ballasts.
Integrated DiodeForward voltage 2.5 V @ 3 A - Eliminates need for external flyback diode, reducing BOM count and PCB footprint in compact SMPS layouts.

Pinout & Package

The FJB3307DTM is housed in a surface-mount D2-PAK (TO-263AB) package with three terminals: Base (pin 1), Collector (pin 2), and Emitter (pin 3). The exposed metal tab is electrically connected to the Collector and serves as the primary thermal path to the PCB heatsink.

Pin/TerminalCircuit RoleDesign Meaning
1 (Base)Control input terminalReceives base current to saturate the transistor; requires ≥1 A peak drive for full 5 A switching with minimal VCE(sat).
2 (Collector)High-voltage power inputConnected to drain of upstream MOSFET or AC line rectifier; ties directly to exposed thermal tab for heatsinking.
3 (Emitter)Power return and reference nodeServes as common emitter node for base drive circuitry and current sensing; must be low-inductance layout for fast switching stability.

Key Features

FeatureDesign Value
High-voltage breakdown700 V VCBO ensures robustness against voltage spikes during turn-off in inductive loads.
Fast switching speedSub-microsecond fall time (0.7 μs) reduces switching losses and EMI generation in high-frequency ballasts.
Thermal performance1.56 °C/W Rθjc enables >80 W continuous dissipation with minimal heatsink area in space-constrained fixtures.
Integrated diodeMonolithically embedded collector-emitter diode eliminates discrete diode placement and solder joint reliability concerns.

Applications

Electronic BallastSwitch-Mode Power Supply

Use Scenario: High-frequency fluorescent lamp control in commercial lighting fixtures with dimming capability.

IC Role / Device Role / Timing Role: Main switching transistor in half-bridge resonant inverter stage, operating at 25–65 kHz.

Use Value: Integrated diode enables zero-voltage switching transitions, reducing audible noise and improving lamp life over discrete BJT+diode solutions.

Use Scenario: Primary-side switch in universal-input 100–300 W offline flyback converter for industrial power adapters.

IC Role / Device Role / Timing Role: High-voltage NPN switch driven by optocoupler-isolated controller, handling 400 V DC bus.

Use Value: 400 V VCEO rating and 3.0 μs storage time allow reliable operation without snubber networks in cost-sensitive designs.

AC-DC AdapterLED Driver

Use Scenario: Compact wall-plug adapter for consumer electronics requiring 12 V/5 A output.

IC Role / Device Role / Timing Role: Primary-side switching element in quasi-resonant flyback topology with valley-switching control.

Use Value: Low VCE(sat) (2.0 V @ 5 A) minimizes conduction loss, enabling >85% efficiency at full load without forced air cooling.

Use Scenario: Constant-current driver for high-bay LED luminaires operating from 277 VAC mains.

IC Role / Device Role / Timing Role: Series-pass switch in buck-derived topology, regulating LED string current up to 1.5 A.

Use Value: 150 °C max junction temperature and 1.56 °C/W Rθjc support sealed fixture operation without thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
FJB3307DTMXTape-and-reel variant of same die; identical electrical specs and package; differs only in packaging format.No functional difference; used interchangeably where reel feed is required for SMT assembly.Select FJB3307DTMX for automated pick-and-place production; FJB3307DTM remains optimal for prototyping or low-volume hand-soldered builds.
MJD3307T4GLower VCEO (300 V), higher Rθjc (2.0 °C/W), no integrated diode; TO-252 package.Not suitable for 400 V bus applications; requires external diode and larger heatsink area.Choose MJD3307T4G only for lower-voltage (<265 VDC) or space-constrained designs where D2-PAK footprint is unacceptable.

Compared with FJB3307DTM, FJB3307DTMX offers identical performance in tape-and-reel form for volume manufacturing, while MJD3307T4G trades off voltage rating and thermal performance for smaller footprint-making FJB3307DTM the optimal choice for 400 V, high-efficiency, thermally demanding applications.

Availability

FJB3307DTM is available at Aetrix Electronics and suitable for electronic ballasts, switch-mode power supplies, and AC-DC adapters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for FJB3307DTM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The FJB3307DTM belongs to ON Semiconductor's legacy PowerTrench®-enhanced bipolar transistor product line, designed specifically for high-voltage, medium-power switching in lighting and industrial power conversion.

FAQ

What is the maximum junction temperature specification for the FJB3307DTM?

The FJB3307DTM has a maximum rated junction temperature (TJ) of 150 °C. This limit must be respected in thermal design to ensure long-term reliability; actual operating TJ should be verified using measured case temperature and the specified Rθjc of 1.56 °C/W. Exceeding 150 °C risks parametric shift and accelerated failure mechanisms in the FJB3307DTM.

Does the FJB3307DTM require an external flyback diode in flyback converter applications?

No-the FJB3307DTM includes a monolithically integrated diode between collector and emitter, eliminating the need for an external flyback diode in standard flyback topologies. This integration reduces component count, PCB area, and potential failure points, and is explicitly confirmed in the device's "Features" section and internal schematic diagram for the FJB3307DTM.

What is the base current requirement to fully saturate the FJB3307DTM at 5 A collector current?

To achieve VCE(sat) ≤ 2.0 V at IC = 5 A, the FJB3307DTM requires IB = 1 A (as specified in the Electrical Characteristics table). This 5:1 forced beta ratio ensures robust saturation across temperature and process variation, and is a key design parameter for selecting compatible base drive circuitry for the FJB3307DTM.

Is the FJB3307DTM pin-compatible with the older Fairchild FJB3307D part?

Yes-the FJB3307DTM is the ON Semiconductor rebranded and repackaged version of the original Fairchild FJB3307D, retaining identical pinout, package (D2-PAK), and electrical specifications. The "TM" suffix denotes tape-and-reel packaging per ON Semiconductor's post-integration nomenclature, and the FJB3307DTM functions as a direct replacement for FJB3307D in existing designs.

What thermal interface material is recommended for mounting the FJB3307DTM to a heatsink?

No specific thermal interface material is mandated, but due to the FJB3307DTM's exposed collector tab and 1.56 °C/W Rθjc, a thermally conductive, electrically insulating pad (e.g., 0.2 mm thick, 1.5 W/m·K) or silicone-based thermal grease is recommended. Mechanical clamping pressure must ensure uniform contact across the entire tab surface to realize the specified Rθjc value for the FJB3307DTM.

FJB3307DTM Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
8 A
Voltage - Collector Emitter Breakdown (Max):
400 V
Vce Saturation (Max) @ Ib, Ic:
3V @ 2A, 8A
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
5 @ 5A, 5V
Power - Max:
1.72 W
Frequency - Transition:
-
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)

FJB3307DTM FAQ

1.How can I place an order for FJB3307DTM through Aetrix?

Please submit a Request for Quotation (RFQ) for FJB3307DTM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJB3307DTM reliable?

The price and inventory of FJB3307DTM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJB3307DTM is usually 5 days.

3.What payment methods are accepted for FJB3307DTM?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJB3307DTM transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJB3307DTM?

FJB3307DTM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJB3307DTM order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJB3307DTM?

For technical support, including FJB3307DTM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJB3307DTM requirements.

6.How does Aetrix verify that FJB3307DTM is sourced from the original manufacturer or authorized distributors?

All FJB3307DTM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJB3307DTM meets industry standards.

7.What is the process for return or replacement of FJB3307DTM?

All FJB3307DTM units undergo pre-shipment inspection (PSI). If there is an issue with FJB3307DTM, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJB3307DTM part is unused and in its original packaging.

Return procedure for FJB3307DTM:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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