Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FJD3076TF

Name: FJD3076TF
Brand: onsemi
SKU: FJD3076TF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: FJD3076TF

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: FJD3076TF.pdf

Description:: TRANS NPN 32V 2A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,887

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

FJD3076TF from ON Semiconductor (formerly Fairchild) is an NPN epitaxial silicon power transistor in D-Pak package, rated for 32 V V_CEO, 2 A I_C, and 10 W P_C at T_C=25°C, with low 0.5–0.8 V V_CE(sat) at I_C=2 A/I_B=0.2 A, used in linear and switching power amplifier stages.

For engineers reviewing the FJD3076TF datasheet, pinout, applications, or equivalent options, key selection criteria include verified DC current gain (h_FE = 130–390 at V_CE=3 V/I_C=0.5 A), safe operating area limits, thermal dissipation capability in surface-mount D-Pak, and breakdown voltage margins for 24 V rail amplifiers.

Technical Context

This NPN bipolar junction transistor operates in active, saturation, and cutoff regions with defined safe operating area (SOA) boundaries for single-pulse and DC conditions. Its f_T of 100 MHz at V_CE=5 V/I_E=−0.5 A supports medium-frequency amplification, while Cob=50 pF at V_CB=10 V enables predictable high-frequency roll-off.

Designed for power amplification, it features low V_BE(sat) and V_CE(sat) to minimize conduction loss, and a maximum junction temperature of 150°C with storage range from −55°C to +150°C, supporting industrial ambient operation without derating below 100°C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	32 V - Maximum collector-emitter voltage before avalanche under open-base condition; sets upper rail limit for Class-A/B amplifier output stage
I_C	2 A - Continuous collector current rating; defines peak linear output capability before thermal shutdown in heatsinked D-Pak layout
P_C (T_C=25°C)	10 W - Thermal power dissipation limit at case temperature 25°C; requires minimum 1.5 cm² copper pour for natural convection cooling
h_FE	130–390 - DC current gain range at V_CE=3 V/I_C=0.5 A; determines base drive sizing for stable bias in emitter-follower configurations
V_CE(sat)	0.5–0.8 V - Saturation voltage at I_C=2 A/I_B=0.2 A; directly impacts conduction loss and thermal rise in switching applications
f_T	100 MHz - Current gain bandwidth product; constrains small-signal amplification bandwidth in RF driver or wideband audio preamp use
C_ob	50 pF - Output capacitance at V_CB=10 V; influences Miller effect and stability compensation in high-gain common-emitter stages

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad (collector tab), 3-pin configuration optimized for thermal conduction and PCB-level power handling.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input terminal	Receives base current to modulate collector current; requires series resistor to limit I_B ≤ 0.2 A for full saturation
2 (Collector)	Main current output terminal	Connected to exposed metal tab; must be soldered to ≥1.5 cm² thermal pad for 10 W dissipation
3 (Emitter)	Current return path	Serves as reference node for bias network; low-impedance connection required to minimize V_BE error

Key Features

Feature	Design Value
Low V_CE(sat)	0.5–0.8 V at full 2 A load reduces conduction loss by >40% vs. standard general-purpose transistors
High h_FE range	130–390 enables consistent biasing across production lots without individual trimming
D-Pak thermal performance	10 W dissipation at T_C=25°C allows direct mounting to PCB copper without external heatsink in <1 W average-power designs
Robust SOA	Single-pulse SOA extends to 2 A/32 V at 100 µs, supporting transient overload in protection-critical amplifier outputs

Applications

Audio Power Amplifier	DC Motor Driver Stage
Use Scenario: Output stage in 10–20 W Class-AB audio amplifier driving 4–8 Ω speakers. IC Role / Device Role / Timing Role: NPN power switch in complementary pair configuration, delivering linear current amplification with minimal crossover distortion. Use Value: Low V_CE(sat) ensures <0.8 V dropout at 2 A peak, preserving headroom and reducing heat sink size by 30% vs. legacy TO-220 alternatives.	Use Scenario: H-bridge high-side switch controlling 12–24 V brushed DC motors in industrial actuators. IC Role / Device Role / Timing Role: High-current NPN switch enabling PWM-driven bidirectional motor control with fast turn-on/turn-off via base drive optimization. Use Value: 100 MHz f_T supports clean 20 kHz PWM edges, minimizing switching losses and audible motor whine in closed-loop speed regulation.
Linear Voltage Regulator Pass Element	Switch-Mode Power Supply Driver
Use Scenario: Series pass transistor in adjustable 3–24 V, 1.5 A linear regulator for analog sensor signal conditioning. IC Role / Device Role / Timing Role: Continuously biased NPN element dissipating up to 8 W during worst-case dropout conditions. Use Value: 150°C T_J rating and D-Pak thermal interface allow stable operation at 110°C case temperature without thermal runaway.	Use Scenario: Gate driver stage for external MOSFETs in 100–500 kHz DC-DC converters. IC Role / Device Role / Timing Role: Fast-switching NPN buffer translating logic-level PWM into higher-current gate drive pulses. Use Value: 50 pF C_ob minimizes Miller feedback, enabling reliable 100 ns turn-off with controlled dV/dt in synchronous buck topologies.

Audio Power Amplifier

DC Motor Driver Stage

Use Scenario: Output stage in 10–20 W Class-AB audio amplifier driving 4–8 Ω speakers.

IC Role / Device Role / Timing Role: NPN power switch in complementary pair configuration, delivering linear current amplification with minimal crossover distortion.

Use Value: Low V_CE(sat) ensures <0.8 V dropout at 2 A peak, preserving headroom and reducing heat sink size by 30% vs. legacy TO-220 alternatives.

Use Scenario: H-bridge high-side switch controlling 12–24 V brushed DC motors in industrial actuators.

IC Role / Device Role / Timing Role: High-current NPN switch enabling PWM-driven bidirectional motor control with fast turn-on/turn-off via base drive optimization.

Use Value: 100 MHz f_T supports clean 20 kHz PWM edges, minimizing switching losses and audible motor whine in closed-loop speed regulation.

Linear Voltage Regulator Pass Element

Switch-Mode Power Supply Driver

Use Scenario: Series pass transistor in adjustable 3–24 V, 1.5 A linear regulator for analog sensor signal conditioning.

IC Role / Device Role / Timing Role: Continuously biased NPN element dissipating up to 8 W during worst-case dropout conditions.

Use Value: 150°C T_J rating and D-Pak thermal interface allow stable operation at 110°C case temperature without thermal runaway.

Use Scenario: Gate driver stage for external MOSFETs in 100–500 kHz DC-DC converters.

IC Role / Device Role / Timing Role: Fast-switching NPN buffer translating logic-level PWM into higher-current gate drive pulses.

Use Value: 50 pF C_ob minimizes Miller feedback, enabling reliable 100 ns turn-off with controlled dV/dt in synchronous buck topologies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD3053T4G	V_CEO=30 V (2 V lower), h_FE=100–300 (lower min), P_C=1.5 W (T_A) only - no 10 W T_C rating	Limited to low-power linear stages; unsuitable for 2 A continuous loads without forced cooling	Select when board space is constrained and thermal budget permits <1.5 W ambient dissipation
SSP15N60B	MOSFET (not BJT); 600 V V_DSS, 15 A I_D, R_DS(on)=0.35 Ω - fundamentally different drive and switching behavior	Used in high-voltage SMPS primary side; incompatible with linear amplifier bias networks	Choose only for high-efficiency switching applications where gate drive compatibility and zero gate current are required

Compared with MJD3053T4G and SSP15N60B, the FJD3076TF uniquely balances high-current linear capability (2 A/10 W), moderate voltage rating (32 V), and BJT-compatible base drive - making it irreplaceable in thermally demanding, medium-frequency power amplifier output stages where MOSFET gate charge or low-V_CEO BJTs fall short.

Availability

FJD3076TF is available at Aetrix Electronics and suitable for audio power amplifiers, DC motor drivers, linear voltage regulators, and switch-mode power supply driver stages requiring stable component supply and traceable industrial-grade sourcing.

Supply support for FJD3076TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier delivering energy-efficient, scalable solutions for automotive, industrial, cloud, medical, and edge applications.

The FJD3076TF belongs to Fairchild's legacy power bipolar transistor family, engineered specifically for high-fidelity linear amplification and robust switching in cost-sensitive industrial power stages.

FAQ

What is the maximum continuous collector current for FJD3076TF?

The FJD3076TF supports a maximum continuous collector current of 2 A at case temperature T_C = 25°C. This rating assumes adequate PCB copper area for thermal conduction; current must be derated linearly above 25°C case temperature per the SOA curve, reaching ~1.2 A at T_C = 100°C. The FJD3076TF datasheet specifies this limit under DC conditions with proper heatsinking.

Does FJD3076TF have a built-in protection diode?

No, the FJD3076TF does not integrate any protection diodes. It is a discrete NPN bipolar transistor with only base, collector, and emitter terminals. External flyback or clamp diodes must be added in inductive load applications such as motor drivers or relay controls to prevent V_CE overshoot beyond the 32 V rating. The FJD3076TF relies on external circuitry for overvoltage and reverse-bias protection.

What is the typical DC current gain (h_FE) of FJD3076TF at operating conditions?

The FJD3076TF exhibits a typical DC current gain (h_FE) of 260 at V_CE = 3 V and I_C = 0.5 A, with a guaranteed minimum of 130 and maximum of 390 under those same test conditions. This h_FE range ensures predictable base drive requirements across manufacturing lots and supports stable bias design in linear amplifier output stages using the FJD3076TF.

Can FJD3076TF be used in surface-mount reflow assembly?

Yes, the FJD3076TF uses the D-Pak (TO-252) package, which is qualified for standard lead-free reflow soldering per J-STD-020. Peak reflow temperature must not exceed 260°C for ≤10 seconds, and the exposed collector tab must be fully soldered to a thermal pad to maintain reliability. The FJD3076TF's package dimensions and thermal profile are compatible with automated SMT lines used in industrial electronics manufacturing.

Is FJD3076TF suitable for automotive applications?

The FJD3076TF is not AEC-Q101 qualified and lacks automotive-grade qualification documentation. While its 150°C junction temperature and industrial-grade construction support extended temperature operation, it is intended for industrial, consumer, and commercial equipment-not safety-critical automotive subsystems. For automotive use, designers should select AEC-Q101-certified alternatives; the FJD3076TF remains appropriate for non-automotive power amplification and motor control.

FJD3076TF Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 32 V

Vce Saturation (Max) @ Ib, Ic:: 800mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 130 @ 500mA, 3V

Power - Max:: 1 W

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

FJD3076TF FAQ

1.How can I place an order for FJD3076TF through Aetrix?

Please submit a Request for Quotation (RFQ) for FJD3076TF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FJD3076TF reliable?

The price and inventory of FJD3076TF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJD3076TF is usually 5 days.

3.What payment methods are accepted for FJD3076TF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJD3076TF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FJD3076TF?

FJD3076TF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FJD3076TF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FJD3076TF?

For technical support, including FJD3076TF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJD3076TF requirements.

6.How does Aetrix verify that FJD3076TF is sourced from the original manufacturer or authorized distributors?

All FJD3076TF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJD3076TF meets industry standards.

7.What is the process for return or replacement of FJD3076TF?

All FJD3076TF units undergo pre-shipment inspection (PSI). If there is an issue with FJD3076TF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FJD3076TF part is unused and in its original packaging.

Return procedure for FJD3076TF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…