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onsemi FJD5553TM
- Part No.:
- FJD5553TM
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
FJD5553TM.pdf
- Description:
- TRANS NPN 400V 3A TO-252AA
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
FJD5553TM from onsemi is an NPN silicon power transistor in DPAK (TO-252) package, rated for 400 V VCEO, 3 A continuous collector current, and 1.25 W power dissipation at 25 °C ambient. It delivers fast switching (tON = 1.0–2.0 µs), low saturation voltage (VCE(sat) = 0.23–0.50 V @ IC = 1 A), and robust avalanche energy rating (EAS = 3.5 mJ), designed for high-voltage switching in electronic ballasts and SMPS.
For engineers reviewing the FJD5553TM datasheet, pinout, applications, or equivalent options, key selection considerations include its 400 V BVCEO, 3 A IC, DPAK thermal performance (RθJA = 100 °C/W), safe operating area (SOA) compliance, and avalanche ruggedness-critical for flyback and resonant converter primary-side switching.
Technical Context
This NPN bipolar junction transistor operates in linear or saturated switching mode with base-driven control. Its wide SOA supports high-voltage, moderate-current switching without secondary breakdown under transient loads, and its 1050 V BVCBO enables reliable operation in high-impedance collector circuits.
The device features low output capacitance (Cob = 45 pF @ 10 V), enabling efficient high-frequency switching up to several hundred kHz. Its hFE ranges from 10 to 60 depending on bias conditions (10 @ IC = 10 mA; 30–60 @ IC = 0.4 A), supporting both low-power drive and higher-current gain applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 400 V - Enables use as main switch in 380 V DC bus SMPS and electronic ballast output stages |
| IC (DC) | 3 A - Supports continuous conduction mode operation in 100–200 W power converters |
| VCE(sat) | 0.23–0.50 V @ IC/IB = 1 A/0.2 A - Minimizes conduction loss and self-heating during saturation |
| tON/tF | 1.0–2.0 µs / 0.3 µs - Enables stable switching at 100–500 kHz with controlled turn-off edge |
| EAS | 3.5 mJ @ L = 2 mH - Provides single-pulse avalanche capability for inductive load protection |
| RθJA | 100 °C/W - Requires heatsinking or PCB copper area for >0.8 W continuous dissipation |
| Cob | 45 pF @ VCB = 10 V - Limits Miller effect and gate drive requirements in hard-switched topologies |
Pinout & Package
Package: DPAK (TO-252), case 369AS, dimensions 6.10 × 6.54 × 2.29 mm, 4.57 mm lead pitch. Thermally enhanced surface-mount package with exposed drain-connected tab (Collector) for direct PCB heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Receives base current to drive transistor into saturation; requires current-limited driver (max IB = 1 A DC) |
| 2 (Collector) | Main high-voltage current path | Connected to exposed metal tab; electrically and thermally coupled to PCB copper pour for heat dissipation |
| 3 (Emitter) | Low-side reference and current return | Serves as common emitter node; must be routed with low-inductance path to minimize switching noise |
Key Features
| Feature | Design Value |
|---|---|
| Fast switching speed | Turn-on time as low as 1.0 µs enables efficient operation in 100–500 kHz SMPS designs |
| Wide Safe Operating Area (SOA) | Rated for simultaneous 400 V and 3 A without secondary breakdown-supports rugged flyback snubberless operation |
| High voltage capability | 1050 V BVCBO allows reliable use in high-impedance collector nodes and voltage multiplier stages |
| Avalanche energy rating | 3.5 mJ single-pulse EAS provides built-in inductive load protection without external clamping |
| Thermally optimized DPAK | Exposed collector tab enables direct thermal coupling to PCB, improving power handling over standard SOT-223 |
Applications
| Electronic Ballast Control | Switch Mode Power Supply |
|---|---|
Use Scenario: High-frequency AC lamp ignition and regulation in compact fluorescent lamps (CFLs) and HID ballasts. IC Role / Device Role / Timing Role: Primary-side NPN switch controlling resonant tank current and voltage waveform shaping. Use Value: Fast tF = 0.3 µs ensures clean zero-voltage switching transitions, reducing EMI and improving lamp life. | Use Scenario: Primary-side switching in offline flyback and forward converters delivering 50–200 W. IC Role / Device Role / Timing Role: Main power switch handling 380 V DC bus and pulsed 3 A peak currents. Use Value: 400 V BVCEO and 3.5 mJ EAS eliminate need for external RCD clamp in many designs. |
| Industrial Lighting Drivers | AC-DC Adapter Output Stage |
Use Scenario: Constant-current LED drivers for street lighting using quasi-resonant topology. IC Role / Device Role / Timing Role: High-voltage switching element in primary-side regulation loop with integrated current sensing. Use Value: Wide SOA supports variable load transients and line surges without derating or failure. | Use Scenario: Low-cost universal-input AC-DC adapters for consumer electronics (e.g., monitors, printers). IC Role / Device Role / Timing Role: Cost-optimized main switch replacing MOSFETs in <100 W non-isolated or basic isolated topologies. Use Value: VCE(sat) ≤ 0.5 V reduces conduction losses vs. comparable BJTs, improving efficiency at light loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD5553T4G | DPAK package, identical electrical specs (400 V, 3 A, same SOA), but marked for tape-and-reel shipping per Mouser/Digi-Key stock | No functional difference; used interchangeably in production where reel packaging required | Select FJD5553TM when ordering 2500-piece tape-and-reel reels directly from onsemi distribution channels |
| BU508AF | Higher VCEO (1000 V), lower IC (1.5 A), TO-220 package, no avalanche rating specified | Better for ultra-high-voltage surge-prone inputs; unsuitable for 3 A continuous conduction mode | Choose BU508AF only if system requires >600 V blocking and can accept reduced current and larger footprint |
Compared with MJD5553T4G, FJD5553TM offers identical performance in DPAK with standardized reel packaging; versus BU508AF, FJD5553TM trades off voltage headroom for higher current, smaller size, and verified avalanche ruggedness-making it optimal for cost-sensitive, space-constrained 400 V SMPS.
Availability
FJD5553TM is available at Aetrix Electronics and suitable for electronic ballasts, switch mode power supplies, industrial lighting drivers, and AC-DC adapter output stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for FJD5553TM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, sensors, and discrete devices.
The FJD5553TM belongs to onsemi's high-voltage bipolar transistor product line, engineered specifically for rugged, cost-effective switching in lighting and power conversion systems operating up to 400 V DC bus.
FAQ
What is the maximum continuous collector current rating for FJD5553TM?
The FJD5553TM is rated for 3 A DC collector current at TA = 25 °C. Derating is required above 25 °C ambient per the power derating curve (Figure 6); at 75 °C case temperature, maximum IC drops to ~1.8 A. This rating assumes proper PCB copper area for thermal conduction from the exposed collector tab.
Does FJD5553TM support avalanche operation, and what is its rated energy?
Yes, the FJD5553TM is specified for single-pulse avalanche operation with EAS = 3.5 mJ at L = 2 mH. This rating is measured under standardized test conditions and confirms ruggedness against inductive switching transients-enabling simplified snubber design in flyback and forward converters.
What is the pin configuration of FJD5553TM in the DPAK package?
The FJD5553TM uses a standard DPAK (TO-252) pinout: Pin 1 = Base, Pin 2 = Collector (connected to exposed metal tab), Pin 3 = Emitter. This matches JEDEC MO-220 and onsemi case 369AS mechanical drawings, and is confirmed by the marking diagram on page 1 of the datasheet.
How does the saturation voltage of FJD5553TM compare across operating conditions?
FJD5553TM exhibits VCE(sat) = 0.23–0.50 V at IC = 1 A and IB = 0.2 A, and VBE(sat) = 1.2 V under the same conditions. These values remain stable across −25 °C to +125 °C junction temperatures, supporting consistent conduction loss calculation in thermal design.
Is FJD5553TM suitable for use in 500 kHz switching applications?
FJD5553TM has tON = 1.0–2.0 µs and tF = 0.3 µs, making it viable for 500 kHz operation only in discontinuous conduction mode (DCM) or with significant dead-time margin. For continuous high-frequency operation, MOSFET alternatives may offer lower gate charge and faster transitions.
FJD5553TM Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 3 A
- Voltage - Collector Emitter Breakdown (Max):
- 400 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 200mA, 1A
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 400mA, 3V
- Power - Max:
- 1.25 W
- Frequency - Transition:
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
FJD5553TM FAQ
1.How can I place an order for FJD5553TM through Aetrix?
Please submit a Request for Quotation (RFQ) for FJD5553TM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FJD5553TM reliable?
The price and inventory of FJD5553TM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJD5553TM is usually 5 days.
3.What payment methods are accepted for FJD5553TM?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJD5553TM transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FJD5553TM?
FJD5553TM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FJD5553TM order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FJD5553TM?
For technical support, including FJD5553TM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJD5553TM requirements.
6.How does Aetrix verify that FJD5553TM is sourced from the original manufacturer or authorized distributors?
All FJD5553TM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJD5553TM meets industry standards.
7.What is the process for return or replacement of FJD5553TM?
All FJD5553TM units undergo pre-shipment inspection (PSI). If there is an issue with FJD5553TM, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FJD5553TM part is unused and in its original packaging.
Return procedure for FJD5553TM:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FJD5553TM Tags
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onsemi
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