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onsemi FJD5555TM
- Part No.:
- FJD5555TM
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
FJD5555TM.pdf
- Description:
- TRANS NPN 400V 5A TO-252AA
- Quantity:
- Payment:
- Shipping:
Inventory:2,103
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Product details
Overview
FJD5555TM from ON Semiconductor is a high-voltage NPN silicon power transistor in D-PAK package, rated for 400 V VCEO, 5 A DC collector current, and 100 W case-power dissipation. It delivers fast switching (tON = 2.0 μs at 250 V), low saturation voltage (VCE(sat) = 1.5 V @ 3.5 A), and robust avalanche energy rating (6 mJ), making it suitable for electronic ballasts and switch-mode power supplies.
For engineers reviewing the FJD5555TM datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area under inductive switching, thermal resistance (RθJC = 1.25 °C/W), base drive requirements (IB = 1.0 A for 3.5 A IC), and avalanche ruggedness in flyback and resonant converter topologies.
Technical Context
The FJD5555TM is designed for hard-switched, high-voltage power conversion where secondary breakdown immunity and controlled turn-off dynamics are critical. Its wide SOA supports operation up to 400 V with 5 A DC, and its 1.25 °C/W junction-to-case thermal resistance enables high-power density mounting on heatsinks without derating at moderate case temperatures.
It features a fast, low-storage-time structure (tSTG = 2.5 μs, tF = 0.3 μs at 250 V) optimized for 20–100 kHz SMPS and electronic lighting ballasts. The device's 14 V BVEBO and 1050 V BVCBO support gate drive margin and transient overvoltage tolerance in high-dV/dt environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 400 V - Supports primary-side switching in offline 230 VAC SMPS with ≥2× safety margin |
| IC (DC) | 5 A - Enables continuous conduction mode operation up to ~250 W output in boost/flyback converters |
| PD @ TC = 25°C | 100 W - Allows direct heatsink mounting with minimal thermal interface resistance |
| RθJC | 1.25 °C/W - Enables precise junction temperature estimation during thermal design |
| tSTG / tF | 2.5 μs / 0.3 μs - Reduces switching losses and EMI generation in 50–100 kHz ballast drivers |
| EAS | 6 mJ - Withstands single-pulse inductive energy in unclamped inductive switching (e.g., relay driving) |
| hFE | 20–40 @ IC = 0.8–3.5 A - Defines required base drive current range for saturation control |
Pinout & Package
Package: D-PAK (TO-252), surface-mount, single-ended power transistor with exposed drain pad (Collector) for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input | Receives forward base current (up to 2 A DC) to saturate transistor; requires current-limiting resistor or driver stage |
| 2 (Collector) | High-voltage power output | Connected to heatsink via exposed metal tab; carries full load current and withstands 400 V blocking |
| 3 (Emitter) | Power return reference | Serves as common emitter node; must be low-inductance path to ground/return for stable switching |
Key Features
| Feature | Design Value |
|---|---|
| Wide Safe Operating Area (SOA) | Rated for 400 V × 5 A DC with no second breakdown limitation up to 100°C case temperature |
| Avalanche Energy Rating | 6 mJ single-pulse capability enables reliable operation in unclamped inductive switching without external snubbers |
| Fast Switching Speed | Combined tON/tSTG/tF < 5 μs at 250 V allows efficient operation at 50–100 kHz with low switching loss |
| Low VCE(sat) | 1.5 V @ 3.5 A reduces conduction loss to < 5.25 W, improving thermal efficiency in high-current stages |
| High BVCBO | 1050 V collector-base rating provides margin against voltage spikes during turn-off in high-L di/dt circuits |
Applications
| Electronic Ballast | Switch-Mode Power Supply |
|---|---|
Use Scenario: High-frequency AC lamp ignition and regulation in fluorescent lighting systems. IC Role / Device Role / Timing Role: Main switching transistor in half-bridge resonant inverter stage. Use Value: Fast tF = 0.3 μs minimizes dead-time losses; 6 mJ EAS absorbs energy from resonant tank collapse without failure. | Use Scenario: Primary-side switch in offline flyback or forward converters delivering 100–300 W. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from AC line to transformer primary. Use Value: 400 V VCEO supports universal input (85–265 VAC); RθJC = 1.25 °C/W enables compact heatsink integration. |
| Inductive Load Driver | DC-DC Converter Stage |
Use Scenario: Driving solenoids, relays, or magnetic actuators in industrial control panels. IC Role / Device Role / Timing Role: Single-ended inductive load switch with integrated avalanche ruggedness. Use Value: 6 mJ EAS eliminates need for external flyback diode in many 24–48 V DC control applications. | Use Scenario: High-current synchronous rectifier or main switch in isolated DC-DC modules for telecom or server PSUs. IC Role / Device Role / Timing Role: High-efficiency power transistor handling >3 A continuous current at ≤400 V bus voltage. Use Value: VCE(sat) = 1.5 V @ 3.5 A limits conduction loss to 5.25 W, easing thermal management in dense board layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STF5555 | Same VCEO (400 V), lower IC (4 A), higher RθJC (1.5 °C/W), no published EAS rating | Limited to lower-power SMPS (<150 W); less robust in avalanche-prone inductive loads | Acceptable where peak current and avalanche stress are reduced; verify SOA curves for target operating point |
| MJD5555 | Same die, TO-252-3 package, identical electrical specs; marking differs (MJD5555 vs J5555), same pinout | No functional difference; used interchangeably in legacy designs with same layout | Drop-in replacement if MJD5555 is already qualified; identical thermal and switching performance |
Compared with STF5555 and MJD5555, the FJD5555TM offers superior avalanche ruggedness (6 mJ) and tighter thermal resistance (1.25 °C/W), making it preferred for high-reliability electronic ballasts and unclamped inductive switching-while MJD5555 serves as a functionally identical alternative with identical pinout and qualification history.
Availability
FJD5555TM is available at Aetrix Electronics and suitable for electronic ballasts, switch-mode power supplies, and industrial inductive load drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for FJD5555TM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, cloud computing, and consumer applications.
The FJD5555TM belongs to ON Semiconductor's high-voltage bipolar power transistor product line, engineered for rugged, high-frequency switching in lighting and power conversion where reliability under repetitive avalanche stress is essential.
FAQ
What is the maximum continuous collector current rating for FJD5555TM?
The FJD5555TM has a DC collector current rating of 5 A at TC = 25°C. Derating is required above 25°C case temperature per the power derating curve in Figure 6; at 100°C case temperature, the usable IC drops to approximately 3.2 A. This rating assumes proper heatsinking and adherence to the SOA limits defined in the datasheet.
Does FJD5555TM support avalanche operation, and what is its rated energy?
Yes, the FJD5555TM is rated for single-pulse avalanche energy of 6 mJ with L = 2 mH, as specified in the Electrical Characteristics table. This rating applies under defined test conditions (VCC = 400 V, IC = 5 A) and confirms its suitability for unclamped inductive switching without external protection in many lighting and power applications.
What is the pin configuration and package type of FJD5555TM?
The FJD5555TM uses the D-PAK (TO-252-3) surface-mount package with standard pinout: Pin 1 = Base, Pin 2 = Collector (connected to exposed metal tab), Pin 3 = Emitter. The Collector tab is electrically and thermally connected to the internal die, requiring isolation from other potentials when mounted to a heatsink.
How does the FJD5555TM compare to the MJD5555 in terms of compatibility?
The FJD5555TM and MJD5555 share identical electrical specifications, thermal characteristics, and pinout. Both use the D-PAK package and are marked differently (J5555 vs MJD5555), but they originate from the same silicon die and process. The FJD5555TM is a Fairchild-branded part now managed by ON Semiconductor, while MJD5555 is the legacy ON Semiconductor designation-making them functionally interchangeable.
What base drive current is required to fully saturate FJD5555TM at 3.5 A collector current?
To achieve VCE(sat) ≤ 1.5 V at IC = 3.5 A, the FJD5555TM requires IB = 1.0 A DC, as specified in the Electrical Characteristics table. This corresponds to a forced beta (hFE) of 3.5, ensuring deep saturation and minimizing conduction loss. A base resistor or active driver must deliver this current with appropriate voltage headroom (VBE(sat) = 1.2 V).
FJD5555TM Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 5 A
- Voltage - Collector Emitter Breakdown (Max):
- 400 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.5V @ 1A, 3.5A
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 20 @ 800mA, 3V
- Power - Max:
- 1.34 W
- Frequency - Transition:
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
FJD5555TM FAQ
1.How can I place an order for FJD5555TM through Aetrix?
Please submit a Request for Quotation (RFQ) for FJD5555TM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FJD5555TM reliable?
The price and inventory of FJD5555TM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJD5555TM is usually 5 days.
3.What payment methods are accepted for FJD5555TM?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJD5555TM transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FJD5555TM?
FJD5555TM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FJD5555TM order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FJD5555TM?
For technical support, including FJD5555TM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJD5555TM requirements.
6.How does Aetrix verify that FJD5555TM is sourced from the original manufacturer or authorized distributors?
All FJD5555TM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJD5555TM meets industry standards.
7.What is the process for return or replacement of FJD5555TM?
All FJD5555TM units undergo pre-shipment inspection (PSI). If there is an issue with FJD5555TM, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FJD5555TM part is unused and in its original packaging.
Return procedure for FJD5555TM:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FJD5555TM Tags
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MMBT3906LT1G
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Nexperia USA Inc.
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