onsemi FJE3303H1TU
- Part No.:
- FJE3303H1TU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-225AA, TO-126-3
- Datasheet:
-
FJE3303H1TU.pdf
- Description:
- TRANS NPN 400V 1.5A TO-126-3
- Quantity:
- Payment:

- Shipping:

Inventory:315
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Product details
Overview
FJE3303H1TU from ON Semiconductor is a high-voltage, fast-switching NPN power transistor in TO-126 package, rated for 700 VCB, 400 VCE, and 1.5 A DC collector current. It delivers 4 MHz gain-bandwidth product, 21 pF output capacitance, and switching times of 1.1 µs (tON), 4.0 µs (tSTG), and 0.7 µs (tF), optimized for electronic ballast and switching regulator circuits.
For engineers reviewing the FJE3303H1TU datasheet, pinout, applications, or equivalent options, key selection criteria include its 400 VCEO breakdown rating, hFE classification H1 (8–16 at IC = 0.5 A), VCE(sat) ≤ 1.0 V at IC = 1.0 A / IB = 0.25 A, and TO-126 thermal performance with 20 W PC at TC = 25°C.
Technical Context
The FJE3303H1TU is a silicon bipolar junction transistor designed for high-voltage switching applications where robust avalanche capability and controlled turn-off behavior are required. Its 700 VCB rating supports operation in flyback and resonant converter topologies with high primary-side voltage stress.
It features a defined hFE classification (H1) ensuring consistent DC current gain between 8 and 16 at VCE = 2 V and IC = 0.5 A, and exhibits low saturation voltage - 0.5 V typical at IC = 0.5 A / IB = 0.1 A - enabling efficient drive in medium-power SMPS stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 400 V - Maximum safe collector-emitter voltage under open-base condition; defines upper limit for switch-node voltage swing in offline converters. |
| IC (DC) | 1.5 A - Continuous collector current handling capacity; sets maximum average load current in linear or switching operation. |
| hFE (H1) | 8–16 - Guaranteed DC current gain range at VCE = 2 V, IC = 0.5 A; enables predictable base drive sizing for stable saturation. |
| VCE(sat) | ≤1.0 V at IC = 1.0 A / IB = 0.25 A - Low on-state voltage drop reduces conduction loss and thermal stress in power stage. |
| fT | 4 MHz - Current gain bandwidth product; indicates usable frequency range for small-signal amplification or high-speed switching control loops. |
| tSTG | 4.0 µs - Storage time under specified resistive-load test conditions (VCC = 125 V, IB1 = 0.2 A, IB2 = −0.2 A); critical for minimizing switching losses during turn-off. |
| PC @ TC = 25°C | 20 W - Maximum collector dissipation at case temperature 25°C; determines heatsink requirement for continuous operation. |
Pinout & Package
Package: TO-126 (standard leaded plastic power package with emitter-collector-base terminal layout; mechanical drawing MKT-TO126AArev2; terminal length D = 3.45–4.05 mm, E = 6.45–7.45 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink terminal | Low-impedance return path for collector current; connected to ground or low-side reference in common-emitter configuration. |
| 2 (Collector) | High-voltage current source terminal | Connected to primary winding or high-side rail; must withstand up to 400 VCEO and support 1.5 A continuous conduction. |
| 3 (Base) | Control input terminal | Receives forward bias current to saturate transistor; requires ≥0.25 A peak drive for full 1.0 A collector conduction per datasheet test condition. |
Key Features
| Feature | Design Value |
|---|---|
| High-voltage capability | 700 VCB and 400 VCEO ratings enable direct use in 230 VAC offline flyback and half-bridge primary switches without snubbers. |
| Fast switching performance | 1.1 µs tON, 4.0 µs tSTG, and 0.7 µs tF reduce total switching loss in 20–100 kHz SMPS designs. |
| H1 hFE classification | Guaranteed 8–16 DC current gain ensures consistent base drive design across production lots for reliable saturation. |
| Low VCE(sat) | 0.5 V typical at IC = 0.5 A / IB = 0.1 A minimizes conduction loss and improves efficiency in medium-power ballasts. |
Applications
| Electronic Ballast Control | Switching Regulator Primary Switch |
|---|---|
Use Scenario: Driving resonant LC tank in fluorescent lamp ballasts operating from 220–240 VAC mains. IC Role / Device Role / Timing Role: High-voltage NPN switch controlling lamp current via zero-voltage switching (ZVS) topology. Use Value: 400 VCEO rating and 4.0 µs storage time allow stable ZVS operation at 20–60 kHz without secondary snubbing. | Use Scenario: Primary-side switch in 15–30 W offline flyback converters for industrial power supplies. IC Role / Device Role / Timing Role: Main power switch turning on/off transformer primary to regulate output voltage. Use Value: 20 W PC and 1.5 A IC support continuous operation at 25°C case temperature with minimal heatsinking. |
| DC-DC Converter Topology | AC-DC Adapter Stage |
Use Scenario: High-side switch in non-isolated buck-derived DC-DC converters for 12 V to 5 V/3.3 V conversion. IC Role / Device Role / Timing Role: Medium-voltage, medium-current switching element in step-down regulation loop. Use Value: 700 VCB margin allows safe operation with 200 V transient spikes on input bus. | Use Scenario: Primary switch in universal-input (90–264 VAC) AC-DC adapters for consumer electronics. IC Role / Device Role / Timing Role: Power transistor in quasi-resonant (QR) or fixed-frequency flyback stage. Use Value: H1 hFE classification ensures repeatable base drive requirements across manufacturing batches. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FJP13007H1TU | Higher VCEO (600 V), higher IC (8 A), larger TO-220 package, fT = 4 MHz same | Supports higher-power flyback and forward converters; not suitable for space-constrained TO-126 layouts | Select when >1.5 A average current or >400 V blocking is required; requires PCB footprint change |
| MJD13005G | Lower VCEO (400 V same), lower IC (1.2 A), TO-252 (DPAK) surface-mount package, hFE unclassified | Designed for SMT assembly; lacks guaranteed hFE binning and has reduced pulse current rating (ICP = 2.4 A vs. 3 A) | Select for automated assembly or thermal pad-compatible layouts; verify gain consistency in production |
Compared with FJE3303H1TU, FJP13007H1TU offers higher current and voltage headroom but requires TO-220 re-layout, while MJD13005G enables surface-mount integration at the cost of unclassified hFE and lower pulse rating - both serve adjacent power tiers but are not pin-compatible replacements.
Availability
FJE3303H1TU is available at Aetrix Electronics and suitable for electronic ballast control, switching regulator primary switching, and DC-DC converter topology applications requiring stable component supply and legacy Fairchild/ON Semiconductor compatibility.
Supply support for FJE3303H1TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, medical, and IoT applications.
The FJE3303H1TU belongs to ON Semiconductor's legacy high-voltage bipolar transistor product line, originally developed by Fairchild for robust, cost-effective switching in lighting and offline power conversion systems.
FAQ
What is the maximum collector-emitter voltage rating for the FJE3303H1TU?
The FJE3303H1TU has a maximum collector-emitter voltage rating (VCEO) of 400 V under open-base conditions at TC = 25°C. This rating is confirmed in the Absolute Maximum Ratings table of the official datasheet (FJE3303 Rev. 2). Exceeding this voltage risks avalanche breakdown and permanent device failure. Derating is required above 25°C case temperature per the power derating curve in Figure 9.
Is the FJE3303H1TU still in active production?
No - the FJE3303H1TU is marked "DISCONTINUED" in the official ON Semiconductor documentation. The datasheet states "THIS DEVICE IS NOT AVAILABLE" and directs users to contact an ON Semiconductor representative for alternatives. Aetrix Electronics maintains limited legacy stock for design continuity, but long-term supply is not assured.
What does the "H1" suffix indicate in FJE3303H1TU?
"H1" denotes the hFE (DC current gain) classification bin for the FJE3303H1TU. Per the Electrical Characteristics table, H1 devices exhibit hFE between 8 and 16 when measured at VCE = 2 V and IC = 0.5 A. This binning ensures predictable base drive requirements and consistent saturation behavior across units shipped as FJE3303H1TU.
What package type is used for the FJE3303H1TU?
The FJE3303H1TU uses the TO-126 package - a through-hole, single-ended plastic power package with three leads (Emitter, Collector, Base) in standard 1-2-3 order. Mechanical dimensions are defined in drawing MKT-TO126AArev2, with terminal lengths D = 3.45–4.05 mm and E = 6.45–7.45 mm for the TSSTU variant referenced in the datasheet.
Can the FJE3303H1TU be used in place of the FJE3303H2TU?
No - the FJE3303H1TU and FJE3303H2TU differ in hFE classification: H1 specifies 8–16 gain, while H2 specifies 14–21 gain at the same test conditions. Substituting between them may cause inconsistent base drive, marginal saturation, or excessive base current consumption. They share identical voltage, current, and switching specs, but are not functionally interchangeable without circuit validation.
FJE3303H1TU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-225AA, TO-126-3
- Packaging:
- Tube
- Product Status:
- Last Time Buy
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 1.5 A
- Voltage - Collector Emitter Breakdown (Max):
- 400 V
- Vce Saturation (Max) @ Ib, Ic:
- 3V @ 500mA, 1.5A
- Current - Collector Cutoff (Max):
- 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 8 @ 500mA, 2V
- Power - Max:
- 20 W
- Frequency - Transition:
- 4MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-126-3
FJE3303H1TU FAQ
1.How can I place an order for FJE3303H1TU through Aetrix?
Please submit a Request for Quotation (RFQ) for FJE3303H1TU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FJE3303H1TU reliable?
The price and inventory of FJE3303H1TU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FJE3303H1TU is usually 5 days.
3.What payment methods are accepted for FJE3303H1TU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FJE3303H1TU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FJE3303H1TU?
FJE3303H1TU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FJE3303H1TU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FJE3303H1TU?
For technical support, including FJE3303H1TU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FJE3303H1TU requirements.
6.How does Aetrix verify that FJE3303H1TU is sourced from the original manufacturer or authorized distributors?
All FJE3303H1TU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FJE3303H1TU meets industry standards.
7.What is the process for return or replacement of FJE3303H1TU?
All FJE3303H1TU units undergo pre-shipment inspection (PSI). If there is an issue with FJE3303H1TU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FJE3303H1TU part is unused and in its original packaging.
Return procedure for FJE3303H1TU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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